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    SIHP18N50C Price and Stock

    Vishay Siliconix SIHP18N50C-E3

    MOSFET N-CH 500V 18A TO220AB
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    DigiKey SIHP18N50C-E3 Tube 501 1
    • 1 $3.55
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    • 100 $3.55
    • 1000 $1.22126
    • 10000 $1.15
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    RS SIHP18N50C-E3 Bulk 1,000
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    • 1000 $2.77
    • 10000 $2.77
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    Vishay Intertechnologies SIHP18N50C-E3

    N Channel Mosfet, 560V, 18A; Channel Type:N Channel; Drain Source Voltage Vds:560V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; No. Of Pins:3Pins Rohs Compliant: Yes |Vishay SIHP18N50C-E3
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    Newark SIHP18N50C-E3 Bulk 1,000
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    Chip 1 Exchange SIHP18N50C-E3 87,100
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    Wuhan P&S SIHP18N50C-E3 38,000 1
    • 1 $5.67
    • 10 $5.67
    • 100 $1.89
    • 1000 $1.7
    • 10000 $1.7
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    Vishay Intertechnologies SIHP18N50CE3

    POWER MOSFET Power Field-Effect Transistor, 18A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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    ComSIT USA SIHP18N50CE3 2,500
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    SIHP18N50C Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHP18N50C-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 18A TO220 Original PDF

    SIHP18N50C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pd 223

    Abstract: SiHP18N50C SiHP18N50C-E3
    Text: SiHP18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V • 100 % Avalanche Tested 0.225 76 • High Peak Current Capability Qgs (nC) 21 • dV/dt Ruggedness Qgd (nC)


    Original     		PDF SiHP18N50C 2002/95/EC O-220AB SiHP18N50C-E3 11-Mar-11 pd 223

    Untitled

    Abstract: No abstract text available
    Text: SiHP18N50C_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHP18N50C AN609, 5860m 8745m 3627m 1768m 9269m 7289m 6290m 0853m

    pd 223

    Abstract: SiHP18N50C SiHP18N50C-E3 pd223w pd223
    Text: SiHP18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) (Ω) VGS = 10 V • 100 % Avalanche Tested 0.225 Qg (Max.) (nC) 76 • High Peak Current Capability Qgs (nC) 21 • dV/dt Ruggedness


    Original     		PDF SiHP18N50C 2002/95/EC O-220 SiHP18N50C-E3 18-Jul-08 pd 223 pd223w pd223

    Untitled

    Abstract: No abstract text available
    Text: SiHP18N50C, SiHF18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Figure-of-Merit Ron x Qg 500 RDS(on) (Ω) VGS = 10 V • 100 % Avalanche Tested 0.225 Qg (Max.) (nC) 76 • High Peak Current Capability Qgs (nC) 21 • dV/dt Ruggedness


    Original     		PDF SiHP18N50C SiHF18N50C O-220 2002/95/EC O-220 SiHP18N50C-E3 SiHF18N50C-E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SiHP18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V • 100 % Avalanche Tested 0.225 76 • High Peak Current Capability Qgs (nC) 21 • dV/dt Ruggedness Qgd (nC)


    Original     		PDF SiHP18N50C 2002/95/EC O-220AB SiHP18N50C-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SiHP18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V • 100 % Avalanche Tested 0.225 76 • High Peak Current Capability Qgs (nC) 21 • dV/dt Ruggedness Qgd (nC)


    Original     		PDF SiHP18N50C 2002/95/EC O-220AB O-220AB SiHP18N50C-E3 2011/65/EU 2002/95/EC. 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: SiHP18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V • 100 % Avalanche Tested 0.225 76 • High Peak Current Capability Qgs (nC) 21 • dV/dt Ruggedness Qgd (nC)


    Original     		PDF SiHP18N50C 2002/95/EC O-220AB O-220AB SiHP18N50C-E3 2011/65/EU 2002/95/EC. 2002/95/EC

    SiHP18N50C

    Abstract: SiHF18N50C SiHF18N50C-E3 SiHP18N50C-E3
    Text: SiHP18N50C, SiHF18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) (Ω) VGS = 10 V • 100 % Avalanche Tested 0.225 Qg (Max.) (nC) 76 • High Peak Current Capability Qgs (nC) 21 • dV/dt Ruggedness


    Original     		PDF SiHP18N50C SiHF18N50C O-220 2002/95/EC O-220 SiHP18N50C-E3 SiHF18N50C-E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SiHP18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V • 100 % Avalanche Tested 0.225 76 • High Peak Current Capability Qgs (nC) 21 • dV/dt Ruggedness Qgd (nC)


    Original     		PDF SiHP18N50C 2002/95/EC O-220AB SiHP18N50C-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    AN609

    Abstract: SiHP18N50C
    Text: SiHP18N50C_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHP18N50C AN609, 9269m 7289m 6290m 0853m AN609

    sihg20n50c-e3

    Abstract: sihg20n50
    Text: V i shay Intertechnolog y, Inc . product description With the SiHP18N50C and SiHG20N50C, Vishay is extending its Gen 6.4 planar MOSFET technology to the TO-220 and TO-247 packages. Their low on-resistance, down to 270 mΩ maximum at VGS = 10 V, helps save energy by reducing conduction


    Original     		PDF SiHP18N50C SiHG20N50C O-220 O-247 VMN-PT0185-1006 sihg20n50c-e3 sihg20n50

    Untitled

    Abstract: No abstract text available
    Text: SiHP18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V • 100 % Avalanche Tested 0.225 76 • High Peak Current Capability Qgs (nC) 21 • dV/dt Ruggedness Qgd (nC)


    Original     		PDF SiHP18N50C 2002/95/EC O-220AB O-220AB SiHP18N50C-E3 11-Mar-11

    SiHP18N50C-E3

    Abstract: SiHF18N50C SiHF18N50C-E3 SiHP18N50C
    Text: Preliminary SiHP18N50C, SiHF18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • High EAR capability 500 RDS(on) (Ω) VGS = 10 V • Low Figure-of-Merit Ron x Qg 0.225 Qg (Max.) (nC) 76 • 100 % Avalanche Tested Qgs (nC) 21 • High Peak Current Capability


    Original     		PDF SiHP18N50C SiHF18N50C O-220 O-220 SiHP18N50C-E3 SiHF18N50C-E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SiHP18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V • 100 % Avalanche Tested 0.225 76 • High Peak Current Capability Qgs (nC) 21 • dV/dt Ruggedness Qgd (nC)


    Original     		PDF SiHP18N50C 2002/95/EC O-220AB SiHP18N50C-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    SIHG20N50C

    Abstract: sihg20n50 2451 mosfet SIHG20N50C-E3 SIHP18N50C-E3 945 mosfet n ay 950
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 500 V with 0.270 Ω RDS on at 10 V VGS AND TEC I INNOVAT O L OGY SiHP185N50C, SiHG20N50C N HN POWER MOSFETs O 19 62-2012 High-Voltage MOSFETs - 500 V N-Channel Combine Low On-Resistance, Low Gate Charge


    Original     		PDF SiHP185N50C SiHG20N50C SiHP18N50C O-220 O-247 SiHP18N50C-E3 SiHG20N50C-E3 O-247 sihg20n50 2451 mosfet 945 mosfet n ay 950