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    SIHG33N60E Price and Stock

    Vishay Siliconix SIHG33N60EF-GE3

    MOSFET N-CH 600V 33A TO247AC
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    DigiKey SIHG33N60EF-GE3 Tube 498 1
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    Bristol Electronics SIHG33N60EF-GE3 350
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    Quest Components SIHG33N60EF-GE3 280
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    Vishay Siliconix SIHG33N60E-E3

    MOSFET N-CH 600V 33A TO247AC
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    DigiKey SIHG33N60E-E3 Tube 500
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    Vishay Siliconix SIHG33N60E-GE3

    MOSFET N-CH 600V 33A TO247AC
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    DigiKey SIHG33N60E-GE3 Tube 1
    • 1 $5.06
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    Vishay Intertechnologies SIHG33N60E-GE3

    N-CHANNEL 600V - Tape and Reel (Alt: SIHG33N60E-GE3)
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    Avnet Americas SIHG33N60E-GE3 Reel 19 Weeks 500
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    Mouser Electronics SIHG33N60E-GE3 248
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    Verical SIHG33N60E-GE3 1,500 500
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    Arrow Electronics SIHG33N60E-GE3 1,500 34 Weeks 500
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    SIHG33N60E-GE3 123 19 Weeks 1
    • 1 $2.335
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    Newark SIHG33N60E-GE3 Cut Tape 500
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    SIHG33N60E-GE3 Reel 500
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    Bristol Electronics SIHG33N60E-GE3 100
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    TTI SIHG33N60E-GE3 Tube 7,500 500
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    TME SIHG33N60E-GE3 1
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    EBV Elektronik SIHG33N60E-GE3 20 Weeks 25
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    Vishay Intertechnologies SIHG33N60EF-GE3

    N-CHANNEL 600V - Bulk (Alt: SIHG33N60EF-GE3)
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    Avnet Americas SIHG33N60EF-GE3 Bulk 19 Weeks 500
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    Mouser Electronics SIHG33N60EF-GE3 323
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    Newark SIHG33N60EF-GE3 Bulk 500
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    TME SIHG33N60EF-GE3 1
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    EBV Elektronik SIHG33N60EF-GE3 20 Weeks 25
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    SIHG33N60E Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHG33N60E-E3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 33A TO247AC Original PDF
    SIHG33N60EF-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 33A TO-247AC Original PDF
    SIHG33N60E-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 33A TO-247AC Original PDF

    SIHG33N60E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SiHG33N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg


    Original     		PDF SiHG33N60EF O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM): Ron x Qg 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.099 Qg (Max.) (nC) 150 • Reduced switching and conduction losses


    Original     		PDF SiHG33N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SIHG33N60E

    Abstract: SIHG33N60E-GE3
    Text: SiHG33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM): Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.099 Qg (Max.) (nC) 150 • Reducted Switching and Conduction Losses


    Original     		PDF SiHG33N60E O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SIHG33N60E-GE3

    Untitled

    Abstract: No abstract text available
    Text: SiHG33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM): Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.099 Qg (Max.) (nC) 150 • Reducted Switching and Conduction Losses


    Original     		PDF SiHG33N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG33N60EF_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHG33N60EF AN609, 6079m 2386m 3612m 2145m 29-Oct-13

    Untitled

    Abstract: No abstract text available
    Text: SiHG33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM): Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.099 Qg (Max.) (nC) 150 • Reducted Switching and Conduction Losses


    Original     		PDF SiHG33N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM): Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.099 Qg (Max.) (nC) 150 • Reducted Switching and Conduction Losses


    Original     		PDF SiHG33N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM): Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.099 Qg (Max.) (nC) 150 • Reducted Switching and Conduction Losses


    Original     		PDF SiHG33N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM): Ron x Qg 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.099 Qg (Max.) (nC) 150 • Reduced switching and conduction losses


    Original     		PDF SiHG33N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    TO-247 FULLPAK Package

    Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 30 % Reduction in Specific On-Resistance I INNOVAT AND TEC O L OGY E Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 600 V and 650 V High-Performance MOSFETs E Series 600 V and 650 V, Super Junction N-Channel Power MOSFETs with a 30 % Reduction


    Original     		PDF enerTO-247 O-247 O-220 PAK/TO-263 VMN-PT0273-1208 TO-247 FULLPAK Package SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E

    Untitled

    Abstract: No abstract text available
    Text: Product Group: Vishay Siliconix, MOSFETs / November 2014 Author: Philip Zuk Tel: 1 408-970-5298 E-mail: philip.zuk@vishay.com Vishay Releases its First Two 600 V Fast Body Diode N-Channel MOSFETs for Soft Switching Topologies Product Benefits: •  


    Original     		PDF O-220, O-263, O-220F, O-247AC SiHP28N60EF SiHF28N60EF SiHB28N60EF SiHG28N60EF SiHG33N60EF SiHP33N60EF

    AN844

    Abstract: No abstract text available
    Text: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note - AN844 How to Select the Right MOSFET for Power Factor Correction Applications Power factor is the ratio of the real power P = Watts to the apparent power (VA = Volt Ampere); the goal is to achieve a power


    Original     		PDF AN844 SiHx15N65E SiHx22N65E SiHx24N65E SiHx5N50D SiHx8N50D SiHx3N50D SiHx12N50C AN844