SIHG33N60EF Search Results
SIHG33N60EF Price and Stock
Vishay Siliconix SIHG33N60EF-GE3MOSFET N-CH 600V 33A TO247AC |
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SIHG33N60EF-GE3 | Tube | 498 | 1 |
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SIHG33N60EF-GE3 | 350 |
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SIHG33N60EF-GE3 | 280 |
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Vishay Intertechnologies SIHG33N60EF-GE3N-CHANNEL 600V - Bulk (Alt: SIHG33N60EF-GE3) |
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SIHG33N60EF-GE3 | Bulk | 12 Weeks | 500 |
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SIHG33N60EF-GE3 | 263 |
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SIHG33N60EF-GE3 | Bulk | 500 |
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SIHG33N60EF-GE3 | Tube | 1,000 | 100 |
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SIHG33N60EF-GE3 | 1 |
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SIHG33N60EF-GE3 | 15 Weeks | 25 |
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SIHG33N60EF Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SIHG33N60EF-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 33A TO-247AC | Original |
SIHG33N60EF Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SiHG33N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg |
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SiHG33N60EF O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiHG33N60EF_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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SiHG33N60EF AN609, 6079m 2386m 3612m 2145m 29-Oct-13 | |
Contextual Info: Product Group: Vishay Siliconix, MOSFETs / November 2014 Author: Philip Zuk Tel: 1 408-970-5298 E-mail: philip.zuk@vishay.com Vishay Releases its First Two 600 V Fast Body Diode N-Channel MOSFETs for Soft Switching Topologies Product Benefits: • |
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O-220, O-263, O-220F, O-247AC SiHP28N60EF SiHF28N60EF SiHB28N60EF SiHG28N60EF SiHG33N60EF SiHP33N60EF |