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Vishay Siliconix SIHF8N50L-E3 MOSFET N-CH 500V 8A TO220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHF8N50L-E3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix SIHF8N50D-E3 MOSFET N-CH 500V 8.7A TO220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHF8N50D-E3	Tube			1,000	1 - 10 - 100 - 1000 $0.69949 10000 $0.69949	Buy Now
Bristol Electronics	SIHF8N50D-E3		850			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	SIHF8N50D-E3		50		3	1 - 10 $1.875 100 $0.7031 1000 $0.7031 10000 $0.7031	Buy Now
Quest Components	SIHF8N50D-E3		680			1 $2.4 10 $2.4 100 $2.4 1000 $0.99 10000 $0.99	Buy Now
	SIHF8N50D-E3		40			1 $2.5 10 $2 100 $1.25 1000 $1.25 10000 $1.25	Buy Now
Vishay Intertechnologies SIHF8N50L-E3 N-CHANNEL 500V - Tape and Reel (Alt: SIHF8N50L-E3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHF8N50L-E3	Reel			1,000	1 - 10 - 100 - 1000 $0.69188 10000 $0.58824	Buy Now
Vishay Intertechnologies SIHF8N50D-E3 Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 33W; TO220FP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SIHF8N50D-E3				1	1 $1.22 10 $1.1 100 $0.88 1000 $0.81 10000 $0.81	Get Quote

SIHF8N50 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIHF8N50D-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 8.7A TO220 FLPK		Original	PDF
SIHF8N50L-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 8A TO220FP		Original	PDF

SIHF8N50 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: New Product SiHF8N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) (Ω) VGS = 10 V 1 Qg (Max.) (nC) 34 Qgs (nC) 7.8 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved	Original	PDF	SiHF8N50L O-220 2002/95/EC SiHF8N50L-E3 11-Mar-11
Untitled Abstract: No abstract text available Text: New Product SiHF8N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) (Ω) VGS = 10 V 1 Qg (Max.) (nC) 34 Qgs (nC) 7.8 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved	Original	PDF	SiHF8N50L O-220 2002/95/EC SiHF8N50L-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: SiHF8N50L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	SiHF8N50L AN609, 17-Nov-10 6534m 3442m 8362m 4941m 1914m 1431m
SiHF8N50D_RC Abstract: No abstract text available Text: SiHF8N50D_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	PDF	SiHF8N50D AN609, 4248m 2000m 2451m 6064m 1344m 8007m 2673m 23-May-12 SiHF8N50D_RC
SIHF8N50D Abstract: No abstract text available Text: SiHF8N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	PDF	SiHF8N50D O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: New Product SiHF8N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) (Ω) VGS = 10 V 1 Qg (Max.) (nC) 34 Qgs (nC) 7.8 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved	Original	PDF	SiHF8N50L 2002/95/EC O-220 SiHF8N50L-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
SiHF8N50L Abstract: SiHF8N50L-E3 D 1703 L Text: New Product SiHF8N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) (Ω) VGS = 10 V 1 Qg (Max.) (nC) 34 Qgs (nC) 7.8 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved	Original	PDF	SiHF8N50L 2002/95/EC O-220 SiHF8N50L-E3 18-Jul-08 D 1703 L
Untitled Abstract: No abstract text available Text: V ishay I ntertechn o l o g y, I nc . SiHF8N50 L- E3 RDS on max: 1.0 Ω @ VGS = 10 V, suitable for ZVS topology, industry-best trr of 63 ns features • Low Trr = 63 ns • Improved EMI results • Improved efficiency • Avoids internal body diode recovery failure	Original	PDF	SiHF8N50 O-220 2002/95/EC SiHF8N50L-E3 S09-1703-Rev. 07-Sep-09 VMN-PT0198-1003
Untitled Abstract: No abstract text available Text: SiHF8N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	PDF	SiHF8N50D O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SiHF8N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	PDF	SiHF8N50D O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: New Product SiHF8N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) (Ω) VGS = 10 V 1 Qg (Max.) (nC) 34 Qgs (nC) 7.8 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved	Original	PDF	SiHF8N50L 2002/95/EC O-220 SiHF8N50L-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
c25 diode to220 Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 500 V with Industry-Best trr of 63 ns I INNOVAT AND TEC O L OGY SiHF8N50L-E3 N HN POWER MOSFETs O 19 62-2012 High-Voltage MOSFET 500 V Low-trr in TO-220 FULLPAK Package KEY BENEFITS • Low trr = 63 ns	Original	PDF	SiHF8N50L-E3 O-220 07-Sep-09 VMN-PT0198-1208 c25 diode to220
IRF740BPBF Abstract: mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50 Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . AND TEC I INNOVAT O L OGY D Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 MOSFETs - Increased Switching Speed High-Performance 400 V, 500 V, and 600 V MOSFETs Feature “Stripe” vs. “Cellular” Geometry Technology	Original	PDF	O-220 O-251) O-220FP O-247AC IRF740BPBF mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50
Untitled Abstract: No abstract text available Text: Vishay Intertechnology, Inc. Consumer Entertainment One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Consumer Entertainment Set-Top Boxes 4 LCD TVs 5 Games Consoles 6 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay	Original	PDF	VMN-MS6761-1312

si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836