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    SIHF840 Search Results

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    SIHF840 Price and Stock

    Vishay Siliconix SIHF840LCS-GE3

    MOSFET N-CH 500V 8A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHF840LCS-GE3 Reel 1,000
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    • 1000 $0.78257
    • 10000 $0.6825
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    Vishay Intertechnologies SIHF840LCS-GE3

    MOSFET N-CHANNEL 500V - Tape and Reel (Alt: SIHF840LCS-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIHF840LCS-GE3 Reel 13 Weeks 1,000
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    • 1000 $0.69384
    • 10000 $0.64235
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    Mouser Electronics SIHF840LCS-GE3
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    • 1000 $0.76
    • 10000 $0.682
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    TTI SIHF840LCS-GE3 Reel 1,000
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    • 10 -
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    • 1000 $0.732
    • 10000 $0.683
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    EBV Elektronik SIHF840LCS-GE3 14 Weeks 50
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    Vishay Siliconix SIHF840STRL-GE3

    SIHF840STRL-GE3 N-channel MOSFET Transistor, 8.1 A, 500 V, 3-Pin D2PAK | Siliconix / Vishay SIHF840STRL-GE3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SIHF840STRL-GE3 Bulk 10
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    • 10 $1.66
    • 100 $1.58
    • 1000 $1.43
    • 10000 $1.43
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    Vishay Intertechnologies IRF840PBF

    MOSFETs TO220 500V 8A N-CH MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IRF840PBF Tube 1,550 50
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    • 100 $0.86
    • 1000 $0.81
    • 10000 $0.78
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    Vishay Intertechnologies SIHF840S-GE3

    Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SIHF840S-GE3 1
    • 1 $1.15
    • 10 $1.03
    • 100 $0.82
    • 1000 $0.76
    • 10000 $0.76
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    SIHF840 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHF840LCS-GE3 Vishay Siliconix MOSFET N-CH 500V 8A D2PAK Original PDF

    SIHF840 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve


    Original
    PDF IRF840LC, SiHF840LC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRF840S, SiHF840S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original
    PDF IRF840S, SiHF840S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve


    Original
    PDF IRF840LC, SiHF840LC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original
    PDF IRF840, SiHF840 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF840A, SiHF840A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original
    PDF IRF840A, SiHF840A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    AN609

    Abstract: IRF840LC SiHF840LC
    Text: IRF840LC_RC, SiHF840LC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    PDF IRF840LC SiHF840LC AN609, 18-Mar-10 AN609

    IRF840LCPBF

    Abstract: IRF840LC SiHF840LC SiHF840LC-E3
    Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V VGS Rating


    Original
    PDF IRF840LC, SiHF840LC 18-Jul-08 IRF840LCPBF IRF840LC SiHF840LC-E3

    IRF840LC

    Abstract: SiHF840LC SiHF840LC-E3
    Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve


    Original
    PDF IRF840LC, SiHF840LC 11-Mar-11 IRF840LC SiHF840LC-E3

    IRF840LCPBF

    Abstract: No abstract text available
    Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve


    Original
    PDF IRF840LC, SiHF840LC 2002/95/EC 11-Mar-11 IRF840LCPBF

    Untitled

    Abstract: No abstract text available
    Text: IRF840A, SiHF840A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original
    PDF IRF840A, SiHF840A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original
    PDF IRF840, SiHF840 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF840S, SiHF840S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original
    PDF IRF840S, SiHF840S 2002/95/EC O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRF840AS, SiHF840AS, IRF840AL, SiHF840AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt


    Original
    PDF IRF840AS, SiHF840AS IRF840AL, SiHF840AL 2002/95/EC O-263) O-262) 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30 V VGS Rating • Reduced Ciss, Coss, Crss


    Original
    PDF IRF840LCS, IRF840LCL, SiHF840LCS SiHF840LCL 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original
    PDF IRF840, SiHF840 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Application of irf840

    Abstract: irf840 IRF840PBF MOSFET IRF840 irf840 vishay datasheet irf840 mosfet SiHF840 SiHF840-E3 Switching Application of irf840
    Text: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original
    PDF IRF840, SiHF840 O-220 O-220 18-Jul-08 Application of irf840 irf840 IRF840PBF MOSFET IRF840 irf840 vishay datasheet irf840 mosfet SiHF840-E3 Switching Application of irf840

    IRF840AL

    Abstract: IRF840AS SiHF840AL SiHF840AL-E3 SiHF840AS SiHF840AS-E3 IRF840
    Text: IRF840AS, IRF840AL, SiHF840AS, SiHF840AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance


    Original
    PDF IRF840AS, IRF840AL, SiHF840AS SiHF840AL O-263) O-262) 18-Jul-08 IRF840AL IRF840AS SiHF840AL-E3 SiHF840AS-E3 IRF840

    IRF840S

    Abstract: SiHF840S SiHF840S-E3
    Text: IRF840S, SiHF840S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 63 Qgs (nC) 9.3 Qgd (nC) 32 Configuration Single D D2PAK • • • • • • • • Surface Mount Available in Tape and Reel


    Original
    PDF IRF840S, SiHF840S O-263) 18-Jul-08 IRF840S SiHF840S-E3

    28544

    Abstract: AN609 IRF840S SiHF840S
    Text: IRF840S_RC, SiHF840S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    PDF IRF840S SiHF840S AN609, 18-Mar-10 28544 AN609

    AN609

    Abstract: IRF840A SiHF840A IRF84
    Text: IRF840A_RC, SiHF840A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    PDF IRF840A SiHF840A AN609, 18-Mar-10 AN609 IRF84

    Untitled

    Abstract: No abstract text available
    Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V VGS Rating


    Original
    PDF IRF840LC, SiHF840LC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original
    PDF IRF840, SiHF840 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF840S, SiHF840S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original
    PDF IRF840S, SiHF840S 2002/95/EC O-263) 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRF840AS, IRF840AL, SiHF840AS, SiHF840AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt


    Original
    PDF IRF840AS, IRF840AL, SiHF840AS SiHF840AL O-262) O-263) 2002/95/EC 18-Jul-08