IRF840S Search Results

Contextual Info: IRF840S, SiHF840S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching

Contextual Info: IRF840S FEATURES • • • • • • • • D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirement Lead Pb -free Available D2PAK (TO-263) G G D S S N-Channel MOSFET

Contextual Info: IRF840S A d van ced Power MOSFET FEATURES - 500 V ^DS on = 0.85Q B ^D S S > a ♦ Lower Input Capacitance II ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 500V

Contextual Info: IRF840S, SiHF840S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching

Contextual Info: PD-95136 IRF840SPbF • Lead-Free D2Pak Document Number: 91071 05/10/04 www.vishay.com 1 IRF840SPbF Document Number: 91071 www.vishay.com 2 IRF840SPbF Document Number: 91071 www.vishay.com 3 IRF840SPbF Document Number: 91071 www.vishay.com 4 IRF840SPbF Document Number: 91071

IRF840S

Abstract: SiHF840S SiHF840S-E3
Contextual Info: IRF840S, SiHF840S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 63 Qgs (nC) 9.3 Qgd (nC) 32 Configuration Single D D2PAK • • • • • • • • Surface Mount Available in Tape and Reel

28544

Abstract: AN609 IRF840S SiHF840S
Contextual Info: IRF840S_RC, SiHF840S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: PD-95136 IRF840SPbF • Lead-Free D2Pak Document Number: 91071 05/10/04 www.vishay.com 1 IRF840SPbF Document Number: 91071 www.vishay.com 2 IRF840SPbF Document Number: 91071 www.vishay.com 3 IRF840SPbF Document Number: 91071 www.vishay.com 4 IRF840SPbF Document Number: 91071

SMD resistors 1022

Abstract: AN-994 IRF840S SMD-220
Contextual Info: PD-9.1013 International Sür]Rectifier IRF840S HEXFET P ow er M O SFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V,DSS : 5 0 0 V

SEC IRF 640

Contextual Info: IRF840S A d van ced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

Contextual Info: IRF840S, SiHF840S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching

IRF840S marking

Contextual Info: IRF840S, SiHF840S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V 0.85 Qg (Max.) (nC) 63 Qgs (nC) 9.3 Qgd (nC) 32 Configuration Single D D2PAK DESCRIPTION (TO-263) G G D S • Halogen-free According to IEC 61249-2-21

Contextual Info: IRF840S RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Ease of Paralleling BVDSS D 500V RDS ON Fast Switching Characteristic Simple Drive Requirement 0.85 ID G 8A S Description APEC MOSFET provide the power designer with the best combination of fast

IRF 100A 500V

Abstract: IRF 640 mosfet IRF 250V 100A IRF840S
Contextual Info: IRF840S A dvanced Power MOSFET FEATURES B V DSS — 5 0 0 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .8 5 ^ 8 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V

IRF840S

Contextual Info: $GYDQFHG 3RZHU 026 7 IRF840S FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.85Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 8 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V

MTP6N60E equivalent

Abstract: buz91a equivalent buz90 equivalent IRFBE30 equivalent IRFB11N50A equivalent irfp460a equivalent BUZ74 equivalent 2SK2645 "cross reference" equivalent buz305 EQUIVALENT irfp22n50a
Contextual Info: Infineon Technologies Cross Reference List CoolMOS CoolMOS Company Product Name VDS [V] IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IRF820 IRF820A IRF820AS IRF820S IRF830A IRF830AS IRF830S IRF840 IRF840A IRF840AS IRF840LCS IRF840S

Contextual Info: IRF840S, SiHF840S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching

IRF840S

Contextual Info: IRF840S RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Ease of Paralleling D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 500V RDS ON 0.85Ω ID G 8A S Description APEC MOSFET provide the power designer with the best combination of fast

F530

Contextual Info: PD-95136 IRF840SPbF • Lead-Free D2Pak www.irf.com 1 05/10/04 IRF840SPbF 2 www.irf.com IRF840SPbF www.irf.com 3 IRF840SPbF 4 www.irf.com IRF840SPbF www.irf.com 5 IRF840SPbF 6 www.irf.com IRF840SPbF www.irf.com 7 IRF840SPbF D2Pak Package Outline Dimensions are shown in millimeters inches

SiHF840S

Abstract: IRF840S smd e3a SiHF840S-E3 SMD-220 IRF840SPBF
Contextual Info: IRF840S, SiHF840S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 63 Qgs (nC) 9.3 Qgd (nC) 32 Configuration Single D D2PAK • • • • • • • • Surface Mount Available in Tape and Reel

RECTIFIER DIODE UG 94

Abstract: smd diode 12c IRF840S marking S54 SMD CODE
Contextual Info: PD-9.1013 International jK?R Rectifier IRF840S HEXFET Power MOSFET D VDSS= 500V G\ _ h L L Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements ^DS on = 0.85Q

IRF840S

Contextual Info: IRF840S Power MOSFET VDSS = 500V, RDS on = 0.85 ohm, ID = 8.0 A D G S N Channel ELECTRICAL CHARACTERISICS at Parameter Tj = 25 C Maximum. Unless stated Otherwise Drain to Source Leakage Current VDS = VGS, ID = 250µA 2.0 - - - - - VDS = 400VDC, VGS = 0VDC Tj=125 C

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

STR-G6551

Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision