IRF820S Search Results

Contextual Info: IRF820S, SiHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching

Contextual Info: PD - 95548 IRF820SPbF • Lead-Free www.irf.com 1 7/22/04 IRF820SPbF 2 www.irf.com IRF820SPbF www.irf.com 3 IRF820SPbF 4 www.irf.com IRF820SPbF www.irf.com 5 IRF820SPbF 6 www.irf.com IRF820SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations

Contextual Info: IRF820S, SiHF820S, IRF820L, SiHF820L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) () VGS = 10 V 3.0 Qg (Max.) (nC) 24 Qgs (nC) 3.3 Qgd (nC) 13 Configuration Single D D2PAK (TO-263)

N-Channel mosfet 400v 25A

Abstract: IRF820S n-channel 250V power mosfet
Contextual Info: IRF820S A dvanced Power MOSFET FEATURES B V DSS — 5 0 0 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 2 .5 A lD = ♦ Improved Gate Charge 3 .0 Î2 ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V

IRF820S

Abstract: diode Rl 257
Contextual Info: $GYDQFHG 3RZHU 026 7 IRF820S FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 3.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.5 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V

Contextual Info: IRF820S A d van ced Power MOSFET FEATURES B ^D S S 500 V - ♦ Avalanche Rugged Technology 3.0Q r\D a II ♦ Lower Input Capacitance cn ^ D S o n = ♦ Rugged Gate Oxide Technology A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 500V

Contextual Info: PD - 95548 IRF820SPbF • Lead-Free Document Number: 91060 7/22/04 www.vishay.com 1 IRF820SPbF Document Number: 91060 www.vishay.com 2 IRF820SPbF Document Number: 91060 www.vishay.com 3 IRF820SPbF Document Number: 91060 www.vishay.com 4 IRF820SPbF Document Number: 91060

Contextual Info: PD - 95548 IRF820SPbF • Lead-Free Document Number: 91060 7/22/04 www.vishay.com 1 IRF820SPbF Document Number: 91060 www.vishay.com 2 IRF820SPbF Document Number: 91060 www.vishay.com 3 IRF820SPbF Document Number: 91060 www.vishay.com 4 IRF820SPbF Document Number: 91060

Contextual Info: IRF820S, SiHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching

Contextual Info: IRF820S, SiHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching

Contextual Info: IRF820S A d van ced Power MOSFET FEATURES BVDSS - ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology LO c\i Q II ♦ Lower Input Capacitance 500 V 3.0Ì2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

IRF820S

Contextual Info: IRF820S, SIHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 24 Qgs (nC) 3.3 Qgd (nC) 13 Configuration Single D DESCRIPTION D2PAK (TO-263) Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRF820S, SIHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 24 Qgs (nC) 3.3 Qgd (nC) 13 Configuration Single D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating

Contextual Info: IRF820S, SIHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 24 Qgs (nC) 3.3 Qgd (nC) 13 Configuration Single D RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

Contextual Info: PD - 95548 IRF820SPbF • Lead-Free 7/22/04 1 IRF820SPbF 2 IRF820SPbF D2Pak Package Outline Dimensions are shown in millimeters inches D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 3 0 S W IT H L OT COD E 8 0 24 AS S E M B L E D O N W W 0 2 , 2 0 0 0

MTP6N60E equivalent

Abstract: buz91a equivalent buz90 equivalent IRFBE30 equivalent IRFB11N50A equivalent irfp460a equivalent BUZ74 equivalent 2SK2645 "cross reference" equivalent buz305 EQUIVALENT irfp22n50a
Contextual Info: Infineon Technologies Cross Reference List CoolMOS CoolMOS Company Product Name VDS [V] IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IRF820 IRF820A IRF820AS IRF820S IRF830A IRF830AS IRF830S IRF840 IRF840A IRF840AS IRF840LCS IRF840S

AN609

Abstract: IRF820S
Contextual Info: IRF820S_RC, SiHF820S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

IRF820S

Abstract: AN-994 SMD-220 rectifier diode for max 250v 1.5A smd mosfet 400v 1A
Contextual Info: PD-9.1011 International B Rectifier IRF820S HEXFET P ow er M O SFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements ^ dss - 500V

Contextual Info: PD-9.1011 International Rectifier IRF820S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 500 V R DS on = 3-OQ

Contextual Info: IRF820S, SiHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

STR-G6551

Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision

sumida 94V-0

Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
Contextual Info: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.

IRGKI165F06

Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Contextual Info: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)