SIHF22N60E Search Results
SIHF22N60E Price and Stock
Vishay Siliconix SIHF22N60E-E3MOSFET N-CH 600V 21A TO220 |
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SIHF22N60E-E3 | Tube | 1,000 |
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Vishay Intertechnologies SIHF22N60E-GE3N-CHANNEL 600V - Bulk (Alt: 19X1936) |
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SIHF22N60E-GE3 | Bulk | 8 Weeks, 4 Days | 1 |
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SIHF22N60E-GE3 | 1,198 |
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SIHF22N60E-GE3 | 114 | 32 |
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SIHF22N60E-GE3 | Bulk | 114 | 1 |
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SIHF22N60E-GE3 | Tube | 1,000 |
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SIHF22N60E-GE3 | 1 |
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SIHF22N60E-GE3 | 23 Weeks | 1,000 |
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SIHF22N60E-GE3 | 21 Weeks | 50 |
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Vishay Intertechnologies SIHF22N60E-E3N-CHANNEL 600V - Rail/Tube (Alt: SIHF22N60E-E3) |
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SIHF22N60E-E3 | Tube | 12 Weeks | 1,000 |
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SIHF22N60E-E3 |
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SIHF22N60E-E3 | Reel | 1,000 |
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SIHF22N60E-E3 | 21 Weeks | 50 |
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Vishay Siliconix SIHF22N60EGE3POWER MOSFET Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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SIHF22N60EGE3 | 1,000 |
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Vishay Siliconix SIHF22N60EPOWER MOSFET Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHF22N60E | 700 |
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SIHF22N60E Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SIHF22N60E-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A TO220 | Original | |||
SIHF22N60E-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A TO220 | Original |
SIHF22N60E Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg |
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SiHF22N60E 2002/95/EC O-220 11-Mar-11 | |
Contextual Info: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.18 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single APPLICATIONS D |
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SiHF22N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SIHF22N60EContextual Info: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg |
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SiHF22N60E 2002/95/EC O-220 11-Mar-11 | |
Contextual Info: SiHF22N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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SiHF22N60E AN609, 2985m 2220m 4617m 0477m 0778m 9408m 20-Jun-12 | |
Contextual Info: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.18 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single D APPLICATIONS |
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SiHF22N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
sihf22n60Contextual Info: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single D Generation Two |
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SiHF22N60E 2002/95/EC O-220 11-Mar-11 sihf22n60 | |
SIHF22N60E-GE3Contextual Info: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg |
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SiHF22N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SIHF22N60E-GE3 | |
Contextual Info: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single D Low Figure-of-Merit (FOM) Ron x Qg |
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SiHF22N60E O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg |
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SiHF22N60E 2002/95/EC O-220 11-Mar-11 | |
Contextual Info: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single D Low Figure-of-Merit (FOM) Ron x Qg |
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SiHF22N60E O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
TO-247 FULLPAK Package
Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E
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enerTO-247 O-247 O-220 PAK/TO-263 VMN-PT0273-1208 TO-247 FULLPAK Package SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 |