SIHF12N60E Search Results

Contextual Info: SiHF12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.38 58 Qgs (nC) 6 Qgd (nC) 13 Configuration Single Note * Pb containing terminations are not RoHS compliant, exemptions

Contextual Info: SiHF12N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

SIHF12N60E-E3

Contextual Info: Work-In-Progress SiHF12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.38 58 Qgs (nC) 6 Qgd (nC) 13 Configuration Single

Contextual Info: SiHF12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.38 58 Qgs (nC) 6 Qgd (nC) 13 Configuration Single Note * Lead (Pb)-containing terminations are not RoHS-compliant.

SIHF12N60E

Contextual Info: Work-In-Progress SiHF12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.38 58 Qgs (nC) 6 Qgd (nC) 13 Configuration Single

Contextual Info: SiHF12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.38 58 Qgs (nC) 6 Qgd (nC) 13 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg

Contextual Info: SiHF12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.38 58 Qgs (nC) 6 Qgd (nC) 13 Configuration Single Low figure-of-merit (FOM) Ron x Qg

Contextual Info: SiHF12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.38 58 Qgs (nC) 6 Qgd (nC) 13 Configuration Single Note * Lead (Pb)-containing terminations are not RoHS-compliant.

Contextual Info: SiHF12N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

TO-247 FULLPAK Package

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Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 30 % Reduction in Specific On-Resistance I INNOVAT AND TEC O L OGY E Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 600 V and 650 V High-Performance MOSFETs E Series 600 V and 650 V, Super Junction N-Channel Power MOSFETs with a 30 % Reduction

si7121

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Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®