SiF912EDZ
Abstract: No abstract text available
Text: SPICE Device Model SiF912EDZ Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SiF912EDZ
S-60410Rev.
20-Mar-06
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SIF912EDZ
Abstract: No abstract text available
Text: SiF912EDZ New Product Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.019 @ VGS = 4.5 V 10.7 0.0195 @ VGS = 4.0 V 10.5 0.022 @ VGS = 3.1 V 9.9 0.027 @ VGS = 2.5 V 9.0 D TrenchFETr Power MOSFETS: 2.5-V Rated
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SiF912EDZ
SiF912EDZ-T1--E3
S-41430--Rev.
26-Jul-04
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SiF912EDZ
Abstract: s2mc
Text: SiF912EDZ Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.019 @ VGS = 4.5 V 10.7 0.0195 @ VGS = 4.0 V 10.5 0.022 @ VGS = 3.1 V 9.9 0.027 @ VGS = 2.5 V 9.0 D TrenchFETr Power MOSFET: 2.5-V Rated
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SiF912EDZ
SiF912EDZ-T1--E3
S-50131--Rev.
24-Jan-05
s2mc
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S-50131-Rev
Abstract: 50131 SiF912EDZ
Text: SiF912EDZ Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.019 @ VGS = 4.5 V 10.7 0.0195 @ VGS = 4.0 V 10.5 0.022 @ VGS = 3.1 V 9.9 0.027 @ VGS = 2.5 V 9.0 D TrenchFETr Power MOSFET: 2.5-V Rated
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SiF912EDZ
SiF912EDZ-T1--E3
08-Apr-05
S-50131-Rev
50131
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SiF912EDZ
Abstract: 3437S
Text: SPICE Device Model SiF912EDZ Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SiF912EDZ
18-Jul-08
3437S
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SiF912EDZ
Abstract: S82350
Text: SiF912EDZ Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.019 at VGS = 4.5 V 10.7 0.0195 at VGS = 4.0 V 10.5 0.022 at VGS = 3.1 V 9.9 0.027 at VGS = 2.5 V 9.0 • Halogen-free • TrenchFET Power MOSFET: 2.5 V Rated
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SiF912EDZ
SiF912EDZ-T1-GE3
18-Jul-08
S82350
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7409
Abstract: AN609 SiF912EDZ
Text: SiF912EDZ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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SiF912EDZ
AN609
13-Aug-07
7409
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Untitled
Abstract: No abstract text available
Text: SiF912EDZ Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.019 at VGS = 4.5 V 10.7 0.0195 at VGS = 4.0 V 10.5 0.022 at VGS = 3.1 V 9.9 0.027 at VGS = 2.5 V 9.0 • Halogen-free • TrenchFET Power MOSFET: 2.5 V Rated
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SiF912EDZ
SiF912EDZ-T1-GE3
08-Apr-05
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SMD resistors 1806
Abstract: SMD zener diode 202 1N4148WS
Text: Cell-phone Table of Contents AUDIO, Audio Control. 3 AUDIO, Earpiece. 5
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HPC0201A
HPC0402A
HPC0402B/C
HPC0603A
SMD resistors 1806
SMD zener diode 202
1N4148WS
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Arduino Mega2560
Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM
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CY8C38
CY8C29
incl795
12T9797
12T9804
12T9803
12T9800
12T9802
12T9801
12T9805
Arduino Mega2560
13001 S 6D TRANSISTOR
arduino uno rev 3
agilent optical encoder 9988
MZ 13001 TRANSISTOR
arduino mega 2650
skiip 613 gb 123 ct
arduino sound sensor module pic
arduino nano
mc34063l
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NEC DIODES
Abstract: No abstract text available
Text: µPA2450/51B Series Power-Switching Solutions for Battery-Powered Applications Description Dual N-channel MOSFETs The µPA2450/51B Series of dual N-channel MOSFETs meets the challenges of battery-powered products with thin packages, low RDS ON , fast switching speed and integrated ESD protection
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PA2450/51B
NEC DIODES
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Siliconix mosfet guide
Abstract: Si9371 power selector guide Si8901EDB Si6875DQ nimh spice model charge SI8901 vishay resistances guide Si4927DY Si6866BDQ
Text: Power MOSFETs for Battery Pack Applications Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no
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Si9731
TSSOP-16
Si9371
Siliconix mosfet guide
Si9371
power selector guide
Si8901EDB
Si6875DQ
nimh spice model charge
SI8901
vishay resistances guide
Si4927DY
Si6866BDQ
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Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs
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Diod92
VMN-SG2127-0911
Diode SOT-23 marking 15d
SI4210
si4812b
SI-4102
SI7149DP
SiM400
si4932
si7135
SiB914
SI4477
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vishay power pak SO-8 package height
Abstract: si4812b Siliconix mosfet guide PowerPACK 1212-8 D2Pak Package vishay material Si5855DC "Power MOSFETs" 1206-8 chipfet layout SI4620DY PowerPAK SO-8
Text: Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no
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SC-75
SC-75A
SC-89
vishay power pak SO-8 package height
si4812b
Siliconix mosfet guide
PowerPACK 1212-8
D2Pak Package vishay material
Si5855DC
"Power MOSFETs"
1206-8 chipfet layout
SI4620DY
PowerPAK SO-8
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