gaas wafer
Abstract: k-band infineon phased array radar
Text: GaAs Components Introduction 1 Introduction Since 1975 Infineon Technologies former Siemens Semiconductors has been engaged in research and development of III-V semiconductor components and circuits. The world’s first commercially available GaAs MMIC was created by Infineon Technologies
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smd transistor M30
Abstract: siemens gaas fet m30 smd TRANSISTOR Behet SIEMENS MICROWAVE RADIO HBT3 low noise hemt x-band microwave fet infineon rf smd package w-band
Text: 7KH *D$V RXQGU\ +LVWRU\ Since 1975 Infineon Technologies former Siemens Semiconductors) has been engaged in research and development of III-V semiconductor components and circuits. The world‘s first commercially available GaAs MMIC was created by Infineon Technologies in 1981.
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D-81541
smd transistor M30
siemens gaas fet
m30 smd TRANSISTOR
Behet
SIEMENS MICROWAVE RADIO
HBT3
low noise hemt
x-band microwave fet
infineon rf smd package
w-band
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SMD TRANSISTOR MARKING 76
Abstract: smd transistor marking 54 transistor RF 98 smd RK 73 SMD smd marking codes list 722 smd transistor SMD TRANSISTOR MARKING 93 75 smd rf transistor marking SMD TRANSISTOR MARKING 86 smd transistor marking af
Text: SIEMENS Inhaltsverzeichnis Table of Contents Selection Guide. 13 RF-Transistors and MMICs.
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MSC 5010
Abstract: Microwave Semiconductors MIL883 leak
Text: SIEMENS 1 HiRel Discrete and Microwave Semiconductors Preliminary Remarks This paragraph gives an overview on the HiRel Discrete and Microwave Semiconductors available from Siemens. For detailed descriptions, screening procedures and quality specifications as well as full data sheets, please refer to our “HiRel Discrete and
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Untitled
Abstract: No abstract text available
Text: SIEMENS AKTIENGESELLSCHAF LOE ]> • 023SbOS G D S m ? S M7D I1SIE6 SIEMENS Transistoren Transistors AIGaAs/GaAs HEMTs AIGaAs/GaAs HEMTs Characteristics TA = 25° C Maximum Ratings E mW 9m mS 70 180 40 ¿> P o Type 70 180 40 -3.0.0 60 180 50 70 200 40
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023SbOS
CGY50
OT-143
CGY40
CLY10
CGY52
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Untitled
Abstract: No abstract text available
Text: SIEMENS CGY 93P GaAs MMIC Preliminary Data • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped
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Q62702G72
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Untitled
Abstract: No abstract text available
Text: SIEMENS CGY93P GaAs MMIC Preliminary Data • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped Package
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CGY93P
Q62702G72
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Untitled
Abstract: No abstract text available
Text: SIEMENS CGY121 A GaAs MMIC Preliminary Datasheet • • • • • • • Variable gain amplifier MMIC-Amplifier for mobile communication Typical Gain Control range over 50dB Positive Control Voltage 50i2 input and output matched Low power consumption
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CGY121
Q-62702-G66
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CGY 8 pin
Abstract: 81541
Text: SIEMENS CGY 0918 GaAs MMIC • • • • Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package Power ramp control ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking
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35dBm
34dBm
Q62702G0077
577ms
15ity
CGY 8 pin
81541
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Untitled
Abstract: No abstract text available
Text: SIEMENS CG Y 52 GaAs MM IC Datasheet * Two stages monolithic microwave IC MMICAmplifier * All gold metallisation *Chip fully passivated * Operating voltage range: 2.7 to 5 V *50 Q. input / output 3 ESD: Electrostatic discharge sensitive device, observe handling precautions!
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VS005554
CGY52
Q68000-A8615
Channel-sold009
CGY52,
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N4 MMIC
Abstract: ud marking marking n4 mmic CGY59 Q68000-A8887 marking code 22nh sot23 473 coilcraft d
Text: SIEMENS Preliminary data * Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems * Biased monolithic microwave 1C (MMIC) * Easily matchable to 50i2 * No bias coil needed * Single positive supply voltage "Low noise figure and high gain
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950MHz
85GHz
Q68000-A8887
A23SbDS
200MHz
CGY59t
N4 MMIC
ud marking
marking n4 mmic
CGY59
marking code 22nh sot23
473 coilcraft d
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B37940-K5220-J62
Abstract: siemens rs 1016 B37940K5220J62 B54102 mmic-amplifier CGY120 B54102-A1471-J60 B37490-K5120-J62 0805CS-220XMBC MMIC marking CODE c4
Text: SIEMENS GaAs MMIC CGY 120 Datasheet * Monolithic microwave IC MMIC-Amplifier for mobile communication * Variable gain amplifier for GSM/PCN applications * Gain Control range over 50dB * 50Q input and output matched * Low power consumption 'Operating voltage range: 2.7 to 6 V
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Q62702-G44
Vcon55
B37940-K5220-J62
siemens rs 1016
B37940K5220J62
B54102
mmic-amplifier
CGY120
B54102-A1471-J60
B37490-K5120-J62
0805CS-220XMBC
MMIC marking CODE c4
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"Marking k2" mmic
Abstract: TLX-9-0150-CH
Text: SIEMENS Preliminary data * Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems * Biased monolithic microwave 1C (MMIC) * Easily matchable to 50Q * No bias coil needed * Single positive supply voltage * Low noise figure and high gain
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950MHz
85GHz
Q68000-A8887
200MHz
"Marking k2" mmic
TLX-9-0150-CH
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RF MODULE CIRCUIT DIAGRAM dect
Abstract: DECT siemens MMIC marking code R
Text: SIEMENS GaAs MMIC CGY 180 Datasheet * Power amplifier for DECT and PCS application * Fully integrated 3 stage amplifier * Operating voltage range: 2.7 to 6 V * Overall power added efficiency 35 % * Input matched to 50 ii, simple output match ESD: Electrostatic discharge sensitive device,
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Q68000-A8882
CGY180
RF MODULE CIRCUIT DIAGRAM dect
DECT siemens
MMIC marking code R
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cgy180
Abstract: No abstract text available
Text: SIEMENS GaAs MMIC CGY 180 Datasheet * Power amplifier for DECT and PCS application * Fully integrated 3 stage amplifier * Operating voltage range: 2.7 to 6 V * Overall power added efficiency 35 % * Input matched to 50 £2, simple output match ESD: Electrostatic discharge sensitive device,
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Q68000-A8882
23SbDS
cgy180
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a3150 ic
Abstract: MMIC marking CODE 74 marking 478 mmic B82412-A3150-M MMIC marking code 132 a3150 34B DBM CGY60 Q62702G-39 Y 60
Text: SIEMENS GaAs MMIC CGY 60 Datasheet * Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems * Biased monolithic microwave 1C (MMIC) Matched to 50C2 for 1.7 to 2GHz * Easily matchable to 50Q for lower frequencies (i.e. GSM-application)
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85GHz)
Q62702G-39
023SbOS
a3150 ic
MMIC marking CODE 74
marking 478 mmic
B82412-A3150-M
MMIC marking code 132
a3150
34B DBM
CGY60
Q62702G-39
Y 60
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MMIC marking CODE 73
Abstract: No abstract text available
Text: SIEMENS Preliminary data * Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems * Biased monolithic microwave 1C (MMIC) * Easily matchable to 5 0 ii * No bias coil needed * Single positive supply voltage * Low noise figure and high gain
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950MHz
85GHz
Q68000-A8887
To234
200MHz
MMIC marking CODE 73
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Untitled
Abstract: No abstract text available
Text: SIEMENS CGY 52 GaAs MMIC D a t a s h e e t * Two stages monolithic microwave IC MMICAmpiifier * All gold metallisation * Chip fully passivated * Operating voltage range: 2.7 to 5 V * 50 £2 input / output 5 - _ , ESD: Electrostatic discharge sensitive device,
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VS005554
CGY52
Q68000-A8615
CGY52,
500hm
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Siemens MMIC
Abstract: CGY180 rohde MMIC SOT 89 marking CODE 1B06 235L Q68000-A8882 DECT siemens T07 marking marking gain stage GaAs MMIC AMPLIFIER
Text: SIEMENS GaAs MMIC CGY 180 Datasheet * * * * * Power amplifier for DECT and PCS application Fully integrated 3 stage amplifier Operating voltage range: 2.7 to 6 V Overall power added efficiency 35 % Input matched to 50 ii, simple output match ESD: Electrostatic discharge sensitive device,
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Q68000-A8882
fl23Sb05
DCHDfa53
Siemens MMIC
CGY180
rohde
MMIC SOT 89 marking CODE
1B06
235L
DECT siemens
T07 marking
marking gain stage GaAs MMIC AMPLIFIER
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infineon radar
Abstract: infineon phased array radar
Text: GaAs Components Infineon tsjcKnti'og '«s Introduction 1 Introduction Since 1975 Infineon Technologies former Siemens Semiconductors has been engaged in research and development ot lll-V semiconductor components and circuits. The world’s first commercially available GaAs MMIC was created by Infineon Technologies
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Untitled
Abstract: No abstract text available
Text: SIEMENS CG Y 0918 GaAs MMIC • • • • Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package Power ramp control ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking
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35dBm
34dBm
Q62702G0077
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MMIC SOT 143 marking CODE 77
Abstract: MARKING SOT-143 C5
Text: SIEMENS CGY 50 GaAs MMIC Datasheet * Single-stage monolithic microwave IC MMICamplifier * Cascadable 50 i2 gain block * Application range: 100 MHz to 3 GHz * IP3 30 dBm typ. @ 1.8 GHz * Gain 8.5 dB typ. @ 1.8 GHz * Low noise figure: 3.0 dB typ @ 1.8 GHz
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YPS05178
Q68000-A8370
OT-143
MMIC SOT 143 marking CODE 77
MARKING SOT-143 C5
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A1271
Abstract: amplifier siemens siemens ic 0805CS-270XMBC A1271 Y siemens 1120 CGY120 CGY121 C547 MARKING CODE CG
Text: SIEMENS C G Y 121 B GaAs MMIC Target Datasheet * Variable gain amplifier MMIC-Amplifier for mobile communication RF-in; -Vg Vcontrol * Gain Control range over 50dB * Positive Control Voltage *50Q input and output matched * Low power consumption * Operating voltage range: 2.7 to 6 V
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Q62702G
A1271
amplifier siemens
siemens ic
0805CS-270XMBC
A1271 Y
siemens 1120
CGY120
CGY121
C547
MARKING CODE CG
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAs MMIC CGY96 Preliminary Datasheet *Power amplifier for GSM class 4 phones *3.2 W 35dBm output power at 3.5 V *Overall power added efficiency 50 % *Fully integrated 3 stage amplifier *Single supply operation *Power ramp control *lnput matched to 50 ohms, simple output match
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CGY96
35dBm)
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