siemens logo application examples
Abstract: san yau dc motor IEC 60252 siemens metal film resistor B3243 cold micro-electronics ltda fz 98 1500 6.3
Text: Metallized Polypropylene Capacitors for AC Applications Short Form Catalog 1999 http://www.siemens.com/pr/index.htm Designing the Future Sustained growth, dynamic demand and the highest quality standards are just as typical of film capacitors as they are of
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siemens magnetic contactor
Abstract: SIEMENS DIN MOUNTING HRC FUSES pirelli cable siemens magnetic contactor 125 kvar B44066R6012E230 B25670A0100A502 BR604 siemens contactor EPCOS 230 00 O B25670A0050A501
Text: Product Profile 2005 PhaseMod PFC Modules for Low-Voltage Power Factor Correction just everywhere . www.epcos.com Welcome to the World of Passive Electronic Components Active everywhere Passive electronic components are found in every electrical and electronic product –
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D501
Abstract: B37741 k1060 smd tabellen Siemens Matsua Components Bestellnummern-Verzeichnis K0682 d5050 nf schaltungen NDKM B37872
Text: Inhaltsverzeichnis Bestellnummernverzeichnis Seite 5 8 Lieferübersicht Elektrische Kurzdaten 11 26 Standard-Chip-Kondensatoren Slim-Line Kondensatoren 27 55 Bedrahtete Kondensatoren, EIA-Standard Bedrahtete Kondensatoren, CECC-Standard 59 68 Allgemeine technische Angaben
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B45170
Abstract: CECC30201-040 CECC30201-801 IEC 384 siemens matsushita kondensator datenbuch siemens elektronik B45185 Siemens matsushita b45 181 2T326
Text: Inhaltsverzeichnis Bauformen-Übersicht Seite 5 9 Chip-Kondensatoren mit festem Elektrolyten 11 Radial bedrahtete Kondensatoren mit festem Elektrolyten 27 Axial bedrahtete Kondensatoren mit festem Elektrolyten Axial bedrahtete Kondensatoren mit flüssigem Elektrolyten
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Transistor 2SC 2166
Abstract: transistor IR 652 P 2166 1j1 bsv 81 X12X15
Text: ESC D • aE35b05 0004602 H ■ S I E G , yvjr-// NPN Transistor for Switching Applications SIEMENS AKTIENGESELLSCHAF - BSV 65 ° ' BSV 65 is an epitaxial NPN silicon planar switching transistor in TO 2 3 6 plastic package 2 3 A 3 DIN 4 1 8 6 9 designed for use in thick and thin film circuits.
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aE35b05
BSV65
Transistor 2SC 2166
transistor IR 652 P
2166 1j1
bsv 81
X12X15
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c111m
Abstract: Transistor 2SC 2166 TRANSISTOR C-111 Q62702-S355 Q62702-S428 1E0C BSV65 Q62702-S347 Q62702-S348 Q62702-S406
Text: ESC D • aE 35b05 0 0 0 4 6 0 2 H ■ S I E G NPN Transistor for Switching Applications SIEMENS AKTIENGESELLSCHAF - , ° y v jr-// BSV 65 ' BSV 65 is an epitaxial NPN silicon planar switching transistor in TO 2 3 6 plastic package 23 A 3 DIN 41869 designed for use in thick and thin film circuits.
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Q62702-S
fi235bOS
BSV65
c111m
Transistor 2SC 2166
TRANSISTOR C-111
Q62702-S355
Q62702-S428
1E0C
BSV65
Q62702-S347
Q62702-S348
Q62702-S406
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BFW92
Abstract: No abstract text available
Text: SIEMENS BFW 92 NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFW 92 BFW 92 Q62702-F321 Pin Configuration
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Q62702-F321
fl235b05
35bQ5
Q0b747Q
BFW92
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c2259
Abstract: w188 N2905
Text: 2SC D • fl23SbOS QQOMÔ^q 2 ■ SIEû PNP Silicon Planar Transistors 2 N 290 4 A 2 N 2905 A SIEMENS AKTIEN6ESELLSCHAF 2 N 2 9 0 4 A and 2 N 2 9 0 5 A are epitaxial PNP silicon planar transistors in TO 3 9 case 5 C 3 DIN 41 87 3 . The collector is electrically connected to the case. The transistors are
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fl23SbOS
62702-F91
235bGS
sa-1250
c2259
w188
N2905
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k 942
Abstract: K942 N 2904 ic 2904 N2905 2904 d 2905 2N2904 2N2904A Q62702-F65
Text: 2SC ]> • 023SbOS 00040=52 'î H S I E 6 ‘ *7_ / " i/ * / 7 PNP Silicon Planar Transistors 2 N 2904 2 N 2905 - SIEMENS AKTIENGESELLSCHAF -2 N 2904 and 2 N 2905 are epitaxial PNP silicon planar transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are
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Q62702-F65
Q62702-F66
C-30V
103mA
lfE-20
053SbOS
-2N2904A
k 942
K942
N 2904
ic 2904
N2905
2904 d
2905
2N2904
2N2904A
Q62702-F65
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A1306 TRANSISTOR
Abstract: t a1306 A1306A A3206A A1316-A3 A1318 A1309 a1328 A1013 A1300 transistor
Text: IEMENS AKTIENGESELLSCHAF 03E J> • -fZ 3 ? - û l ÔB3SbQS DOlSfciBR û BISIEG Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancement types in plastic package T0-220 AB Typ Type ^DS max fc(max)
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O-220
T0-220
C67078-
A1300-A2
A1329-A2
A1301-A2
BUZ11
A1301-A3
A1330-A3
A1331-A2
A1306 TRANSISTOR
t a1306
A1306A
A3206A
A1316-A3
A1318
A1309
a1328
A1013
A1300 transistor
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BFQ70
Abstract: zo 107 NA BFq 98 transistor zo 109 zo 107 MA ST2C Q62702-F774 VCE051S1 bfq 85 zo 107
Text: SIEM ENS NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. • Hermetically sealed ceramic package • HiRel/Mil screening available. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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VCE051S1
Q62702-F774
fi23SbOS
0Gb7117
BFQ70
zo 107 NA
BFq 98
transistor zo 109
zo 107 MA
ST2C
VCE051S1
bfq 85
zo 107
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Untitled
Abstract: No abstract text available
Text: SIEM ENS NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. • Hermetically sealed ceramic package • HiRel/Mil screening available. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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BFQ70
Q62702-F774
S23SbOS
0Db7117
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5N521
Abstract: BFQ71 VCE05181 bfq 85 Q62702-F775 siemens Pm 90 87 transistor zo 103 MA 7S 714
Text: SIEMENS BFQ71 NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available. B CECC-type available: CECC 50002/260.
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BFQ71
Q62702-F775
0235bG5
DGb713S
5N521
VCE05181
bfq 85
siemens Pm 90 87
transistor zo 103 MA 7S 714
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DQ712
Abstract: 511000BJ-70
Text: SIEMENS 1 M x 1-Bit Dynamic RAM Low Power 1 M x 1-Bit Dynamic RAM HYB 511000BJ-50/-60/-70 HYB 511000BJL-50/-60/-70 Advanced Information • 1 048 576 words by 1-bit organization • Fast access and cycle time 50 ns access time 95 ns cycle time -50 version
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511000BJ-50/-60/-70
511000BJL-50/-60/-70
DQ712
511000BJ-70
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ZO 607 MA 7A 523
Abstract: cmo 765 transistor zo 607 MA 7S ZO 607 MA 7A 524 CM 1241 siemens Ka2 transistor BFQ 270 ZO 607 transistor BFQ82 Q62702-F1189
Text: SIEMENS NPN Silicon RF Transistor B F Q 82 • For low-noise, high-gain amplifiers up to 2 GHz. • Linear broadband applications at collector currents up to 40 mA. • Hermetically sealed ceramic package. • /t = 8 GHz F = 1.1 dB at 800 MHz ESD : Electrostatic discharge sensitive device, observe handling precautions!
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BFQ82
BFQ82
Q62702-F1189
AH35b05
00b7Sn
ZO 607 MA 7A 523
cmo 765
transistor zo 607 MA 7S
ZO 607 MA 7A 524
CM 1241 siemens
Ka2 transistor
BFQ 270
ZO 607 transistor
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Untitled
Abstract: No abstract text available
Text: LH1550 SIEMENS HIGH VOLTAGE, SOLID STATE RELAY OPTOCOUPLER FEATURES Normally Open, Single Pole S ingleThrow Operation Control 350 VAC o r DC Voltage Switch 100 mA Loads LED Control Current, 2.5 mA Low ON-Resistance, 37 QTyp. at 100 mA Isolation Test Voltage, 3750 VACRMS
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E52744
LH1550
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SIEMENS tle 420
Abstract: ic 7014
Text: SIEMENS 1M X 16-Bit Dynamic RAM 1 k & 4k-Refresh HYB 3116160BSJ-50/-60/-70 HYB 3118160BSJ-50/-60/-70 Advanced Inform ation I 048 576 words by 16-bit organization 0 to 70 C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version)
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16-Bit
3116160BSJ-50/-60/-70
3118160BSJ-50/-60/-70
HYB3118160BSJ-50)
HYB3118160BSJ-60)
HYB3118160BSJ-70)
HYB3116160BSJ-50)
SIEMENS tle 420
ic 7014
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6N13B
Abstract: No abstract text available
Text: SIEMENS 6N138 6N139 LOW INPUT CURRENT, HIGH GAIN OPTOCOUPLER FEATURES * * * * * * * * High Current Transfer Ratio, 800% Low Input Current, 0.5mA High Output Current, 60mA Isolation Test Voltage, 2500 VACnM TTL Compatible Output, VOL=0.1 V High Common Mode Rejection, 500V/|xsec.
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6N138
6N139
HE52744
6N13B
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P5501
Abstract: No abstract text available
Text: SIEMENS 256 K X 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM HYB 514256B/BJ-50/-60/-70 HYB 514256BL/BJL-50/-60/-70 A d v a n c e d In fo rm a tio n 2 62 144 w o rd s by 4 -b it o rg a n iz a tio n S in g le + 5 V ± 10 % su p p ly w ith a bu ilt-in f 'BB
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514256B/BJ-50/-60/-70
514256BL/BJL-50/-60/-70
P5501
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Untitled
Abstract: No abstract text available
Text: SIEMENS 8M X 8-Bit Dynamic RAM 4k & 8k Refresh HYB 3164800J/T-50/-60 HYB 3165800J/T -50/-60 P re lim in a ry In fo rm a tio n • 8 38 8 6 0 8 w o rd s by 8 -b it o rg a n iz a tio n Low p o w e r d issip a tio n • 0 to 70 C o p e ra tin g te m p e ra tu re
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3164800J/T-50/-60
3165800J/T
800J/T-50/-60
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IRFZ42 equivalent
Abstract: tdk P2616 P2616 BUX12 UC3840
Text: / = 7 SGS-THOMSON * 7 * , . 6 [L tlC T tM M ! A PPLICA TIO N NOTE A WIDE RANGE INPUT DC-DC POWER CONVERTER INTRODUCTION This 300W DC-DC converter, shown in Fig. 1 has a flyback topology and works in continuous mode with single output and features primary side control.
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SGSUC3840
SGS2N2222A
SGS2N2907
SGSP301
IRFZ42
BUX12
350pF
220pF
IRFZ42 equivalent
tdk P2616
P2616
UC3840
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5117400BJ -50/-60/-70 HYB 5117400BT -50/-60/-70 A d v a n c e d In fo rm a tio n • 4 194 30 4 w o rd s by 4 -b it o rg a n iz a tio n S in g le + 5 V ± 10 % sup ply • 0 to 70 C o p e ra tin g te m p e ra tu re Low p o w e r dissip a tio n
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5117400BJ
5117400BT
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
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Untitled
Abstract: No abstract text available
Text: SIEMENS 256 MBit Synchronous DRAM HYB 39S256400/800/160T Preliminary Information • High Performance: Multiple Burst Read with Single W rite Operation -8 -8B -10 Units 125 100 100 MHz fCK3 8 10 10 ns Data M ask for Read/W rite control fAC3 6 6 7 ns Data M ask for byte control
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39S256400/800/160T
0235b05
39S256400/80Q/160AT
A53SbDS
D1113G0
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