Untitled
Abstract: No abstract text available
Text: New Product SiE878DF Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0052 at VGS = 10 V 45 0.0068 at VGS = 4.5 V 45 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET
|
Original
|
SiE878DF
2002/95/EC
11-Mar-11
|
PDF
|
SIE878DF-T1-GE3
Abstract: No abstract text available
Text: New Product SiE878DF Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0052 at VGS = 10 V 45 0.0068 at VGS = 4.5 V 45 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET
|
Original
|
SiE878DF
2002/95/EC
18-Jul-08
SIE878DF-T1-GE3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product SiE878DF Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0052 at VGS = 10 V 45 0.0068 at VGS = 4.5 V 45 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET
|
Original
|
SiE878DF
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiE878DF Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
SiE878DF
18-Jul-08
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product SiE878DF Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0052 at VGS = 10 V 45 0.0068 at VGS = 4.5 V 45 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET
|
Original
|
SiE878DF
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product SiE878DF Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0052 at VGS = 10 V 45 0.0068 at VGS = 4.5 V 45 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET
|
Original
|
SiE878DF
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
AN609
Abstract: 65721
Text: SiE878DF_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
|
Original
|
SiE878DF
AN609,
11-Jan-10
AN609
65721
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiE878DF www.vishay.com Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
SiE878DF
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs Pola rPA K M O S F ET s features • Leadframe and plastic encapsulation construction - Provides better die protection and reliability - Easier manufacturing handling - Fixed footprint and pad layout independent of die size, ≤ 100 V
|
Original
|
VMN-PT0052-1002
|
PDF
|
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®
|
Original
|
Mediu33-4-9337-2727
VMN-SG2127-1210
si7121
Si4914B
SI-4102
SI4599
Si4483A
sir166
irfd120
si7949
si4459a
SIR836
|
PDF
|
R312
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Dual Heat Dissipation Paths Increase Current Density AND TEC I INNOVAT O L OGY PolarPAK N HN POWER MOSFETs O 19 62-2012 PolarPAK® Brings Standard Packaging to Double-Sided Cooling FEATURES • Leadframe and plastic encapsulation construction
|
Original
|
VMN-PT0052-1209
R312
|
PDF
|
Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs
|
Original
|
Diod92
VMN-SG2127-0911
Diode SOT-23 marking 15d
SI4210
si4812b
SI-4102
SI7149DP
SiM400
si4932
si7135
SiB914
SI4477
|
PDF
|
