SIB455EDK Search Results

65750

Contextual Info: SPICE Device Model SiB455EDK Vishay Siliconix P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

AN609

Contextual Info: SiB455EDK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: New Product SiB455EDK Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.027 at VGS = - 4.5 V - 9a 0.039 at VGS = - 2.5 V - 9a 0.069 at VGS = - 1.8 V - 9a 0.130 at VGS = - 1.5 V -3 • Halogen-free According to IEC 61249-2-21

marking BKX

Abstract: SIB455EDK-T1-GE3 SC-75
Contextual Info: New Product SiB455EDK Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.027 at VGS = - 4.5 V - 9a 0.039 at VGS = - 2.5 V - 9a 0.069 at VGS = - 1.8 V - 9a 0.130 at VGS = - 1.5 V -3 • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product SiB455EDK Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.027 at VGS = - 4.5 V - 9a 0.039 at VGS = - 2.5 V - 9a 0.069 at VGS = - 1.8 V - 9a 0.130 at VGS = - 1.5 V -3 • Halogen-free According to IEC 61249-2-21

SiB914

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 1.6 mm x 1.6 mm Footprint with Low On-Resistance AND TEC I INNOVAT O L OGY PowerPAK SC-75 N HN POWER MOSFETs O 19 62-2012 Ultra-Low On-Resistance, and Ultra-Small Size KEY FEATURES • PowerPAK® SC-75 provides same tiny 1.6 mm x 1.6 mm footprint as standard SC-75, but with

Si7141

Abstract: SiA447DJ SI7615A
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

SiB431EDK

Contextual Info: Portable Media Player Table of Contents AUDIO, Headphones. 3 AUDIO,

SI4497

Contextual Info: V is h ay I n t e rt e c h n olo g y, I n c . Power MOSFETs Key features and Benefits • Lowest on-resistance per area achieved for a p-channel provides on-resistance down to half of previous industry best • Down to sub 2 mΩ in SO-8 footprint area • Variety of package sizes, from PowerPAK SO-8 down to 1.6 mm x 1.6 mm