SI7635DP Search Results
SI7635DP Price and Stock
Vishay Siliconix SI7635DP-T1-GE3MOSFET P-CH 20V 40A PPAK SO-8 |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
SI7635DP-T1-GE3 | Cut Tape |
|
Buy Now | |||||||
Vishay Intertechnologies SI7635DPT1GE3Electronic Component |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
SI7635DPT1GE3 | 1,188 |
|
Get Quote | |||||||
Vishay Intertechnologies SI7635DP-T1-GE3Trans MOSFET PCH 20V 26A 8Pin PowerPAK SO TR (Alt: SI7635DP-T1-GE3) |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
SI7635DP-T1-GE3 | 143 Weeks | 3,000 |
|
Buy Now |
SI7635DP Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
---|---|---|---|---|---|---|
SI7635DP-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 40A 8-SOIC | Original |
SI7635DP Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
AN609
Abstract: 65261
|
Original |
Si7635DP AN609, 22-Jul-09 AN609 65261 | |
Contextual Info: Si7635DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0049 at VGS = 10 V - 40 0.0075 at VGS = 4.5 V - 40 VDS (V) - 20 Qg (Typ.) 21.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
Original |
Si7635DP 2002/95/EC Si7635DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si7635DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0049 at VGS = 10 V - 40 0.0075 at VGS = 4.5 V - 40 VDS (V) - 20 Qg (Typ.) 21.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
Original |
Si7635DP 2002/95/EC Si7635DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SPICE Device Model Si7635DP www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
Si7635DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SPICE Device Model Si7635DP Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
Si7635DP 18-Jul-08 | |
S7635
Abstract: si7635
|
Original |
Si7635DP 2002/95/EC S7635DP-T1-GE3 18-Jul-08 S7635 si7635 | |
Contextual Info: Si7635DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0049 at VGS = 10 V - 40 0.0075 at VGS = 4.5 V - 40 VDS (V) - 20 Qg (Typ.) 21.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
Original |
Si7635DP 2002/95/EC S7635DP-T1-GE3 11-Mar-11 | |
Contextual Info: Si7635DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0049 at VGS = 10 V - 40 0.0075 at VGS = 4.5 V - 40 VDS (V) - 20 Qg (Typ.) 21.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
Original |
Si7635DP 2002/95/EC Si7635DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: Si7635DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0049 at VGS = 10 V - 40 0.0075 at VGS = 4.5 V - 40 VDS (V) - 20 Qg (Typ.) 21.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
Original |
Si7635DP 2002/95/EC Si7635DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si7635DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0049 at VGS = 10 V - 40 0.0075 at VGS = 4.5 V - 40 VDS (V) - 20 Qg (Typ.) 21.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
Original |
Si7635DP 2002/95/EC S7635DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Arduino Mega2560
Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
|
Original |
CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
|
Original |
Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 | |
inverter 12v to 220 ac mosfet basedContextual Info: LT8710 Synchronous SEPIC/ Inverting/Boost Controller with Output Current Control Description Features Wide Input Range: 4.5V to 80V Rail-to-Rail Output Current Monitor and Control Input Voltage Regulation for High Impedance Inputs C/10 or Power Good Indication Pin |
Original |
LT8710 750kHz 20-Lead LT8710 100kHz LT3959 LTC3786 QFN-16, MSOP-16E inverter 12v to 220 ac mosfet based | |
Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
|
Original |
Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 |