SI7228DN Search Results
SI7228DN Price and Stock
Vishay Siliconix SI7228DN-T1-GE3MOSFET 2N-CH 30V 26A PPAK 1212 |
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SI7228DN-T1-GE3 | Digi-Reel | 1 |
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Vishay Intertechnologies SI7228DN-T1-GE3Dual N-Channel 30-V(D-S) Mosfet |Vishay SI7228DN-T1-GE3 |
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SI7228DN-T1-GE3 | Reel | 3,000 |
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SI7228DN-T1-GE3 | 70 |
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SI7228DN-T1-GE3 | 143 Weeks | 3,000 |
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SI7228DN-T1-GE3 | 1,320 |
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Vishay Huntington SI7228DN-T1-GE3 |
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SI7228DN-T1-GE3 | 35 |
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SI7228DN-T1-GE3 | 5,327 |
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SI7228DN Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SI7228DN-T1-GE3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 26A PPAK 1212-8 | Original |
SI7228DN Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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si7228Contextual Info: Si7228DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.020 at VGS = 10 V 26 0.025 at VGS = 4.5 V 23 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
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Si7228DN 2002/95/EC Si7228DN-T1-GE3 11-Mar-11 si7228 | |
Contextual Info: Si7228DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.020 at VGS = 10 V 26 0.025 at VGS = 4.5 V 23 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
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Si7228DN 2002/95/EC Si7228DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: Si7228DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.020 at VGS = 10 V 26 0.025 at VGS = 4.5 V 23 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
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Si7228DN 2002/95/EC Si7228DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si7228DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.020 at VGS = 10 V 26 0.025 at VGS = 4.5 V 23 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
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Si7228DN 2002/95/EC Si7228DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
land pattern for TSSOP-8
Abstract: TSOP 54 land pattern
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Si7228DN 2002/95/EC Si7228DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 land pattern for TSSOP-8 TSOP 54 land pattern | |
Contextual Info: Si7228DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.020 at VGS = 10 V 26 0.025 at VGS = 4.5 V 23 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
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Si7228DN 2002/95/EC Si7228DN-T1-GE3 11-Mar-11 | |
AN609
Abstract: 957-1000
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Si7228DN AN609, 17-Mar-09 AN609 957-1000 | |
Contextual Info: SPICE Device Model Si7228DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range |
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Si7228DN 18-Jul-08 | |
Contextual Info: Si7228DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.020 at VGS = 10 V 26 0.025 at VGS = 4.5 V 23 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
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Si7228DN 2002/95/EC Si7228DN-T1-GE3 18-Jul-08 | |
Contextual Info: 5-Channel Integrated Power Solution with Quad Buck Regulators and 200 mA LDO Regulator ADP5050 Data Sheet FEATURES TYPICAL APPLICATION CIRCUIT ADP5050 VDD C1 INT VREG OSCILLATOR 100mA RT C0 FB1 PVIN1 4.5V TO 15V BST1 C2 COMP1 CHANNEL 1 BUCK REGULATOR 1.2A/2.5A/4A |
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ADP5050 100mA D10899-0-3/14 | |
Contextual Info: FEATURES TYPICAL APPLICATION CIRCUIT Wide input voltage range: 4.5 V to 15.0 V ±1.5% output accuracy over full temperature range 250 kHz to 1.4 MHz adjustable switching frequency Adjustable/fixed output options via factory fuse Power regulation Channel 1 and Channel 2: programmable 1.2 A/2.5 A/4 A |
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CP-48-13 ADP5053 D11636-0-11/13 | |
Contextual Info: Integrated Power Solutions for Altera FPGAs Modern high performance FPGA-based systems require an increasing number of dedicated rails supplying core, I/O, memory, PLL, and precision analog voltages. Typical FPGA-based systems today make use of standalone |
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ADP505x BR10509-0-11/13 | |
BST412
Abstract: GRM31CR61A476ME15 GRM188R60J226 GRM188R60J226M QDG1 adp5052 AON7804 SS34 Fuse IRFHM8363 4AC17
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04-26-2013-C CP-48-13 ADP5052 ADP5052 D10900-0-5/13 BST412 GRM31CR61A476ME15 GRM188R60J226 GRM188R60J226M QDG1 AON7804 SS34 Fuse IRFHM8363 4AC17 | |
Contextual Info: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs M O S F ET s Tre nchFET G e n III Key features and Benefits Low conduction and switching losses enable increased efficiency and reduced power consumption • Record-breaking maximum on-resistance at VGS = 4.5 V rating |
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VMN-PT0105-1007 | |
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Contextual Info: 5-Channel Integrated Power Solution with Quad Buck Regulators and 200 mA LDO Regulator ADP5052 Data Sheet FEATURES TYPICAL APPLICATION CIRCUIT APPLICATIONS ADP5052 SYNC/MODE VREG VDD C1 INT VREG OSCILLATOR 100mA RT C0 FB1 PVIN1 4.5V TO 15V BST1 C2 COMP1 CHANNEL 1 |
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ADP5052 100mA BUC25Â 48-Lead CP-48-13 D10900-0-2/14 | |
adp5050
Abstract: ADP5050-EVALZ 4-Layer PCB Layout Guideline
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04-26-2013-C CP-48-13 ADP5050 ADP5050 D10899-0-5/13 ADP5050-EVALZ 4-Layer PCB Layout Guideline | |
sir158
Abstract: q113 SiZ340DT SiR158DP N3X3
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SiZ790DT SiZ914DT VMN-PT0182-1209 sir158 q113 SiZ340DT SiR158DP N3X3 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 | |
Contextual Info: Integrated Power Solutions for Xilinx FPGAs Modern high performance FPGA-based systems require an increasing number of dedicated rails supplying core, I/O, memory, PLL, and precision analog voltages. Typical FPGA-based systems today make use of standalone |
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ADP505x BR10508-5-9/13 | |
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - High- and Low-Side MOSFETs in One Compact Package PowerPAIR Co-Packaged MOSFETs Reduce Space, Increase Performance Over Two Discretes Key Benefits APPLICATIONS • High- and low-side MOSFETs in one |
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SiZ790DT SiZ914DT VMN-PT0182-1402 | |
Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
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Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 | |
Contextual Info: FEATURES TYPICAL APPLICATION CIRCUIT Wide input voltage range: 4.5 V to 15.0 V ±1.5% output accuracy over full temperature range 250 kHz to 1.4 MHz adjustable switching frequency Adjustable/fixed output options via factory fuse or I2C interface I2C interface with interrupt on fault conditions |
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ADP5051 Sin60 04-26-2013-C CP-48-13 ADP5051 PR11635-0-9/13 | |
Contextual Info: FEATURES TYPICAL APPLICATION CIRCUIT Wide input voltage range: 4.5 V to 15.0 V ±1.5% output accuracy over full temperature range 250 kHz to 1.4 MHz adjustable switching frequency Adjustable/fixed output options via factory fuse Power regulation Channel 1 and Channel 2: programmable 1.2 A/2.5 A/4 A |
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ADP5053 04-26-2013-C PR11636-0-9/13 |