si7228
Abstract: No abstract text available
Text: Si7228DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.020 at VGS = 10 V 26 0.025 at VGS = 4.5 V 23 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Si7228DN
2002/95/EC
Si7228DN-T1-GE3
11-Mar-11
si7228
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Untitled
Abstract: No abstract text available
Text: Si7228DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.020 at VGS = 10 V 26 0.025 at VGS = 4.5 V 23 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Si7228DN
2002/95/EC
Si7228DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si7228DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.020 at VGS = 10 V 26 0.025 at VGS = 4.5 V 23 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Si7228DN
2002/95/EC
Si7228DN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si7228DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.020 at VGS = 10 V 26 0.025 at VGS = 4.5 V 23 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Si7228DN
2002/95/EC
Si7228DN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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land pattern for TSSOP-8
Abstract: TSOP 54 land pattern
Text: Si7228DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.020 at VGS = 10 V 26 0.025 at VGS = 4.5 V 23 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Original
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Si7228DN
2002/95/EC
Si7228DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
land pattern for TSSOP-8
TSOP 54 land pattern
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Untitled
Abstract: No abstract text available
Text: Si7228DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.020 at VGS = 10 V 26 0.025 at VGS = 4.5 V 23 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Si7228DN
2002/95/EC
Si7228DN-T1-GE3
11-Mar-11
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AN609
Abstract: 957-1000
Text: Si7228DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Si7228DN
AN609,
17-Mar-09
AN609
957-1000
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7228DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Si7228DN
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si7228DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.020 at VGS = 10 V 26 0.025 at VGS = 4.5 V 23 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Si7228DN
2002/95/EC
Si7228DN-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: 5-Channel Integrated Power Solution with Quad Buck Regulators and 200 mA LDO Regulator ADP5050 Data Sheet FEATURES TYPICAL APPLICATION CIRCUIT ADP5050 VDD C1 INT VREG OSCILLATOR 100mA RT C0 FB1 PVIN1 4.5V TO 15V BST1 C2 COMP1 CHANNEL 1 BUCK REGULATOR 1.2A/2.5A/4A
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ADP5050
100mA
D10899-0-3/14
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Untitled
Abstract: No abstract text available
Text: FEATURES TYPICAL APPLICATION CIRCUIT Wide input voltage range: 4.5 V to 15.0 V ±1.5% output accuracy over full temperature range 250 kHz to 1.4 MHz adjustable switching frequency Adjustable/fixed output options via factory fuse Power regulation Channel 1 and Channel 2: programmable 1.2 A/2.5 A/4 A
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CP-48-13
ADP5053
D11636-0-11/13
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Untitled
Abstract: No abstract text available
Text: Integrated Power Solutions for Altera FPGAs Modern high performance FPGA-based systems require an increasing number of dedicated rails supplying core, I/O, memory, PLL, and precision analog voltages. Typical FPGA-based systems today make use of standalone
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ADP505x
BR10509-0-11/13
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BST412
Abstract: GRM31CR61A476ME15 GRM188R60J226 GRM188R60J226M QDG1 adp5052 AON7804 SS34 Fuse IRFHM8363 4AC17
Text: 5-Channel Integrated Power Solution with Quad Buck Regulators and 200 mA LDO Regulator ADP5052 Data Sheet FEATURES TYPICAL APPLICATION CIRCUIT APPLICATIONS ADP5052 VDD C1 INT VREG OSCILLATOR 100mA RT C0 FB1 PVIN1 4.5V TO 15V BST1 C2 COMP1 CHANNEL 1 BUCK REGULATOR
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04-26-2013-C
CP-48-13
ADP5052
ADP5052
D10900-0-5/13
BST412
GRM31CR61A476ME15
GRM188R60J226
GRM188R60J226M
QDG1
AON7804
SS34 Fuse
IRFHM8363
4AC17
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Untitled
Abstract: No abstract text available
Text: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs M O S F ET s Tre nchFET G e n III Key features and Benefits Low conduction and switching losses enable increased efficiency and reduced power consumption • Record-breaking maximum on-resistance at VGS = 4.5 V rating
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VMN-PT0105-1007
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Untitled
Abstract: No abstract text available
Text: 5-Channel Integrated Power Solution with Quad Buck Regulators and 200 mA LDO Regulator ADP5052 Data Sheet FEATURES TYPICAL APPLICATION CIRCUIT APPLICATIONS ADP5052 SYNC/MODE VREG VDD C1 INT VREG OSCILLATOR 100mA RT C0 FB1 PVIN1 4.5V TO 15V BST1 C2 COMP1 CHANNEL 1
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ADP5052
100mA
BUC25Â
48-Lead
CP-48-13
D10900-0-2/14
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adp5050
Abstract: ADP5050-EVALZ 4-Layer PCB Layout Guideline
Text: 5-Channel Integrated Power Solution with Quad Buck Regulators and 200 mA LDO Regulator ADP5050 Data Sheet FEATURES TYPICAL APPLICATION CIRCUIT ADP5050 SYNC/MODE VREG VDD C1 INT VREG OSCILLATOR 100mA RT C0 FB1 PVIN1 4.5V TO 15V BST1 C2 COMP1 CHANNEL 1 BUCK REGULATOR
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04-26-2013-C
CP-48-13
ADP5050
ADP5050
D10899-0-5/13
ADP5050-EVALZ
4-Layer PCB Layout Guideline
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sir158
Abstract: q113 SiZ340DT SiR158DP N3X3
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - High- and Low-Side MOSFETs in One Compact Package AND TEC I INNOVAT O L OGY PowerPAIR N HN POWER MOSFETs O 19 62-2012 Co-Packaged MOSFETs Reduce Space, Increase Performance Over Two Discretes KEY BENEFITS
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SiZ790DT
SiZ914DT
VMN-PT0182-1209
sir158
q113
SiZ340DT
SiR158DP
N3X3
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si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®
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Mediu33-4-9337-2727
VMN-SG2127-1210
si7121
Si4914B
SI-4102
SI4599
Si4483A
sir166
irfd120
si7949
si4459a
SIR836
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Untitled
Abstract: No abstract text available
Text: Integrated Power Solutions for Xilinx FPGAs Modern high performance FPGA-based systems require an increasing number of dedicated rails supplying core, I/O, memory, PLL, and precision analog voltages. Typical FPGA-based systems today make use of standalone
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ADP505x
BR10508-5-9/13
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Untitled
Abstract: No abstract text available
Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - High- and Low-Side MOSFETs in One Compact Package PowerPAIR Co-Packaged MOSFETs Reduce Space, Increase Performance Over Two Discretes Key Benefits APPLICATIONS • High- and low-side MOSFETs in one
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SiZ790DT
SiZ914DT
VMN-PT0182-1402
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Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs
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Diod92
VMN-SG2127-0911
Diode SOT-23 marking 15d
SI4210
si4812b
SI-4102
SI7149DP
SiM400
si4932
si7135
SiB914
SI4477
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Untitled
Abstract: No abstract text available
Text: FEATURES TYPICAL APPLICATION CIRCUIT Wide input voltage range: 4.5 V to 15.0 V ±1.5% output accuracy over full temperature range 250 kHz to 1.4 MHz adjustable switching frequency Adjustable/fixed output options via factory fuse or I2C interface I2C interface with interrupt on fault conditions
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ADP5051
Sin60
04-26-2013-C
CP-48-13
ADP5051
PR11635-0-9/13
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Untitled
Abstract: No abstract text available
Text: FEATURES TYPICAL APPLICATION CIRCUIT Wide input voltage range: 4.5 V to 15.0 V ±1.5% output accuracy over full temperature range 250 kHz to 1.4 MHz adjustable switching frequency Adjustable/fixed output options via factory fuse Power regulation Channel 1 and Channel 2: programmable 1.2 A/2.5 A/4 A
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ADP5053
04-26-2013-C
PR11636-0-9/13
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