h1010
Abstract: 1/SI9939 Si9942DY si9939
Text: Si9942DY Siliconix Dual EnhancementĆMode MOSFET NĆ and PĆChannel Product Summary VDS (V) NĆChannel 20 PĆChannel -20 rDS(on) (W) ID (A) 0.125 @ VGS = 10 V "3.0 0.250 @ VGS = 4.5 V "2.0 0.200 @ VGS = -10 V "2.5 0.350 @ VGS = -4.5 V "2.0 Recommended upgrade: Si9939
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Si9942DY
Si9939
Si6942DQ
P-38798--Rev.
h1010
1/SI9939
si9939
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Untitled
Abstract: No abstract text available
Text: Tem ic SÌ9942DY Siliconix Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VD S(V) N-Channel 20 P-Channel 20 r DS(on) (Û ) I d (A) 0.125 @ V GS = 10 V ±3.0 0.250 @ V Gs = 4.5 V ± 2.0 0.200 @ V Gs = - 1 0 V ±2.5 0.350 @ V GS = -4 .5 V ± 2.0
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9942DY
Si9939
Si6942DQ
P-35258--Rev.
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si6942
Abstract: No abstract text available
Text: T e m ic siiiconix_ SÌ9942DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS(V) N-Channel P-Channel 20 -2 0 r DS(on) (Q ) I d (A) 0.125 @ VGs = 10 V ±3.0 0.250 @ VGs = 4.5 V ±2.0 0.200 @ VGs = - 1 0 V ±2.5 0.350 @ VGS = -4 .5 V
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9942DY
Si9939
Si6942DQ
l50oC
P-38798--
si6942
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SI9952DY
Abstract: P3482 SI9952 S19939DY
Text: Tem ic SÌ9952DY Siliconix Dual Enhancement-Mode MOSFET N- and P-Channel Product Summaiy V d s (V) N-Channel r DS(on) (Q ) I d (A) 0.10 @ V GS = 10 V ± 3 .5 0.15 @ V GS = 4.5 V ± 2 .0 0.25 @ V GS = - 1 0 V ± 2 .3 0.40 @ V GS = - 4 .5 V ± 1 .8 25 P-Channel
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9952DY
S19939DY
Si9943DY
Si6942DQ
P-34826--Rev.
05A6/94)
SI9952DY
P3482
SI9952
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