SI9939 Search Results

h1010

Abstract: 1/SI9939 Si9942DY si9939
Contextual Info: Si9942DY Siliconix Dual EnhancementĆMode MOSFET NĆ and PĆChannel Product Summary VDS (V) NĆChannel 20 PĆChannel -20 rDS(on) (W) ID (A) 0.125 @ VGS = 10 V "3.0 0.250 @ VGS = 4.5 V "2.0 0.200 @ VGS = -10 V "2.5 0.350 @ VGS = -4.5 V "2.0 Recommended upgrade: Si9939

Si4539DY

Abstract: Si6543DQ Si9939DY
Contextual Info: Si9939DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 0.12 @ VGS = –6V "3 0.16 @ VGS = –4.5 V

Si4539DY

Abstract: Si6543DQ Si9939DY 51308
Contextual Info: Si9939DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 0.12 @ VGS = –6V "3 0.16 @ VGS = –4.5 V

SI9952DY

Abstract: SI9952 Si4532DY Si4539DY Si6542DQ Si6543DQ Si9939DY
Contextual Info: Si9952DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 25 P-Channel –25 rDS(on) (W) ID (A) 0.10 @ VGS = 10 V "3.5 0.15 @ VGS = 4.5 V "2.0 0.25 @ VGS = –10 V "2.3 0.40 @ VGS = –4.5 V "1.8 Recommended upgrade: Si4532DY, Si4539DY or Si9939DY

Si4539DY

Abstract: Si6543DQ Si9939DY
Contextual Info: Si9939DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 0.12 @ VGS = –6V "3 0.16 @ VGS = –4.5 V

SI9952DY

Abstract: SI9952 70137 Si4532DY Si4539DY Si6542DQ Si6543DQ Si9939DY
Contextual Info: Si9952DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 25 P-Channel –25 rDS(on) (W) ID (A) 0.10 @ VGS = 10 V "3.5 0.15 @ VGS = 4.5 V "2.0 0.25 @ VGS = –10 V "2.3 0.40 @ VGS = –4.5 V "1.8 Recommended upgrade: Si4532DY, Si4539DY or Si9939DY

SI9952DY

Abstract: SI9952 n-channel mosfet transistor P-channel power mosfet SO-8 SI4532DY Si4539DY Si6542DQ Si6543DQ Si9939DY
Contextual Info: Si9952DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 25 P-Channel –25 rDS(on) (W) ID (A) 0.10 @ VGS = 10 V "3.5 0.15 @ VGS = 4.5 V "2.0 0.25 @ VGS = –10 V "2.3 0.40 @ VGS = –4.5 V "1.8 Recommended upgrade: Si4532DY, Si4539DY or Si9939DY

Si9939DY

Contextual Info: Si9939DY Vishay Siliconix Complimentary 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Ch N-Channel l rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 30 P-Channel P Ch l –30 30 0.12 @ VGS = –6V

Si9939DY

Contextual Info: Si9939DY Siliconix Dual EnhancementĆMode MOSFETs NĆ and PĆChannel Product Summary VDS (V) NĆChannel Ch l rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = -10 V "3.5 0.12 @ VGS = -6V "3 0.16 @ VGS = -4.5 V

Si4539DY

Abstract: Si6543DQ Si9939DY
Contextual Info: Si9939DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 0.12 @ VGS = –6V "3 0.16 @ VGS = –4.5 V

Si9939DY

Contextual Info: Si9939DY Vishay Siliconix Complimentary 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Ch N-Channel l rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 30 P-Channel P Ch l –30 30 0.12 @ VGS = –6V

Contextual Info: Si9939DY Vishay Siliconix Complimentary 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Ch N-Channel l rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 30 P-Channel P Ch l –30 30 0.12 @ VGS = –6V

Contextual Info: Temic Silicon»:_ S.9939DY D ual E nhancem ent-M ode M O SFETs N- and P-Channel Product Summary V d s (V) rDS(on) ( ß ) I d (A) 0.05 @ VGS = 10 V ±3.5 0.07 @ VGs = 6 V ±3 0.08 @ VGs = 4.5 V ±2.5 0.10 @ VGs = - ±3.5 30 iov 0.12 @ VGS = —6V

BALLAST ELECTRONIC 25W INVERTERS

Abstract: 25w inverter SI9939 025E6 8-11 ballast tube CTX210659 ML4877 FLUORESCENT ballast 12v schematic inverter lcd inverter n mosfet cross reference
Contextual Info: October 1998 NEW! Design 2.5W Inverter for Displays 4 inch to 6 inch ML4878 Single Stage LCD Backlight Lamp Driver GENERAL DESCRIPTION FEATURES The ML4878 is an integrated ballast controller for miniature cold cathode fluorescent lamps CCFL that are used for back lighting of liquid crystal displays (LCD).

70611

Abstract: FET pair n-channel p-channel mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole CIRCUIT Logic Level p-Channel Power MOSFET AN804 Si9942DY
Contextual Info: AN804 Vishay Siliconix P-Channel MOSFETs, the Best Choice for High-Side Switching Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

SDCFB

Abstract: sandisk SDTB-32 SDP3B SDTB-32 SMBJ15A SDCFB-32 semikron SK 300GB SDCFB-128 SDP3B-8-101
Contextual Info: Semiconductor Directory ManufacturerÕs Code Log AGT ADI AMD AVX COL CRY Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Collmer Semiconductors, Inc. Crydom Company Mfr.Õs Type Price DLS EPC FSC GIS IRF INT Mfr.Õs Code Page Dallas Semiconductor

GS 069

Contextual Info: Temic SÌ9952DY S e m i c o n d u c t o r s Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary V D S(V ) 25 N-Channel P-Channel I d (A ) r DS(on) (£2) -25 0 .1 0 @ V GS = 10V ± 3 .5 0.15 @ VGS = 4.5 V ± 2 .0 0.25 @ V gs = -1 0 V ± 2 .3 0.40 @ V gs = -4 .5 V

mosfet cross reference

Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Contextual Info: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P

Contextual Info: Tem ic SÌ9942DY Siliconix Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VD S(V) N-Channel 20 P-Channel 20 r DS(on) (Û ) I d (A) 0.125 @ V GS = 10 V ±3.0 0.250 @ V Gs = 4.5 V ± 2.0 0.200 @ V Gs = - 1 0 V ±2.5 0.350 @ V GS = -4 .5 V ± 2.0

2n7000 complement

Abstract: VP0300L mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 equivalent AN804 Si9939DY Si9942DY Si9958DY TP0610
Contextual Info: AN804 Siliconix PĆChannel MOSFETs, the Best Choice for HighĆSide Switching Ed Oxner Circuit Applications Historically, pĆchannel FETs were not considered as useful as their nĆchannel counterparts. The higher resistivity of pĆtype silicon, resulting from its lower carrier mobility, put

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated