SI5913DC Search Results
SI5913DC Price and Stock
Vishay Siliconix SI5913DC-T1-GE3MOSFET P-CH 20V 4A 1206-8 |
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SI5913DC-T1-GE3 | Cut Tape |
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Vishay Intertechnologies SI5913DC-T1-GE3 |
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SI5913DC-T1-GE3 | 2,992 |
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SI5913DC-T1-GE3 | 143 Weeks | 3,000 |
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SI5913DC Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SI5913DC-T1-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 4A 1206-8 | Original | |||
SI5913DC-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 4A 1206-8 | Original |
SI5913DC Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Si5913DC Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.084 at VGS = - 10 V - 4f - 20 0.108 at VGS = - 4.5 V - 4f - 3.5 0.175 at VGS = - 2.5 V Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21 |
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Si5913DC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
S-82298-Rev
Abstract: SI5913DC
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Si5913DC Si5913DC-T1-E3 18-Jul-08 S-82298-Rev | |
Si5913DCContextual Info: SPICE Device Model Si5913DC Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range |
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Si5913DC 18-Jul-08 | |
si5913
Abstract: MOSFET MARKING 4F
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Si5913DC 2002/95/EC 18-Jul-08 si5913 MOSFET MARKING 4F | |
Contextual Info: Si5913DC Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.084 at VGS = - 10 V - 4f - 20 0.108 at VGS = - 4.5 V - 4f - 3.5 0.175 at VGS = - 2.5 V Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21 |
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Si5913DC 2002/95/EC Si5913DC-T1-E3 Si5913DC-T1-GE3 11-Mar-11 | |
1654.4
Abstract: AN609 220473
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Si5913DC AN609, CONFIGU873 15-Sep-08 1654.4 AN609 220473 | |
Contextual Info: Si5913DC Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.084 at VGS = - 10 V - 4f - 20 0.108 at VGS = - 4.5 V - 4f - 3.5 0.175 at VGS = - 2.5 V Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21 |
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Si5913DC 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 | |
Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
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Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 |