SI5902BDC Search Results

74878

Abstract: Si5902BDC
Contextual Info: SPICE Device Model Si5902BDC Vishay Siliconix Dual N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si5902BDC

Abstract: Si5902DC Si5902DC-T1 Si5902DC-T1-E3 1010IS
Contextual Info: Specification Comparison Vishay Siliconix Si5902BDC vs. Si5902DC Description: Package: Pin Out: Dual N-Channel 30-V D-S MOSFET 1206-8 ChipFET Identical Part Number Replacements Si5902BDC-T1-E3 Replaces Si5902DC-T1-E3 Si5902BDC-T1-E3 Replaces Si5902DC-T1

Contextual Info: Si5902BDC Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a Qg (Typ.) 2 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si5902BDC

Abstract: marking code ce SI5902BDC-T1-GE3 SI5902BDC-T1-E3
Contextual Info: Si5902BDC Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a Qg (Typ.) 2 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si5902BDC Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a Qg (Typ.) 2 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si5902BDC

Contextual Info: New Product Si5902BDC Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a Qg (Typ) 2 nC • TrenchFET Power MOSFET APPLICATIONS RoHS • Load switch for portable applications

74878

Abstract: Si5902BDC
Contextual Info: SPICE Device Model Si5902BDC Vishay Siliconix Dual N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

IS 2687

Abstract: C 3866 AN609 Si5902BDC
Contextual Info: Si5902BDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si5902BDC

Contextual Info: New Product Si5902BDC Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a Qg (Typ) 2 nC • TrenchFET Power MOSFET APPLICATIONS RoHS • Load switch for portable applications

3 watt 70v zener diode

Abstract: inkjet print head interface K784P
Contextual Info: Inkjet Printer Table of Contents ACCESS SENSORS, Door Sensor. 3 CONTROL BOARD, DSP

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

Diode SOT-23 marking 15d

Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs

gs 069

Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04
Contextual Info: N-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no