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    SI4936DY Price and Stock

    Rochester Electronics LLC SI4936DY

    MOSFET 2N-CH 30V 5.8A 8SOIC
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    Vishay Siliconix SI4936DY

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    Bristol Electronics SI4936DY 2,800 3
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    Vishay Intertechnologies SI4936DYT1

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    Vishay Siliconix SI4936DYT1

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    SI4936DY Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si4936DY Fairchild Semiconductor Dual N-Channel Enhancement Mode MOSFET Original PDF
    Si4936DY Fairchild Semiconductor Dual N-Channel Enhancement Mode MOSFET Original PDF
    SI4936DY Fairchild Semiconductor Dual N-Channel Enhancement Mode MOSFET Original PDF
    Si4936DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI4936DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET Original PDF
    SI4936DY_NL Fairchild Semiconductor Dual N-Channel Enhancement Mode MOSFET Original PDF

    SI4936DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si4936DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4936DY

    Si4936DY

    Abstract: No abstract text available
    Text: Si4936DY Siliconix Dual NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.037 @ VGS = 10 V "5.8 0.055 @ VGS = 4.5 V "4.7 D1 D1 D2 D2 SOĆ8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 NĆChannel MOSFET S2 NĆChannel MOSFET


    Original     		PDF Si4936DY S42148Rev.

    Si4936DY

    Abstract: Si4936DY-T1
    Text: Si4936DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.037 @ VGS = 10 V 5.8 0.055 @ VGS = 4.5 V 4.7 D TrenchFETr Power MOSFET D Lead (Pb)-Free Version is RoHS Compliant D1 SO-8 S1 1 8 D1 G1 2 7 D1


    Original     		PDF Si4936DY Si4936DY-T1 Si4936DY-T1--E3 18-Jul-08

    SI4936DY

    Abstract: av 66
    Text: Si4936DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4936DY av 66

    Si4936DY

    Abstract: Si6954DQ Si9936DY
    Text: Si9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V "3.9 Recommended upgrade: Si4936DY Lower profile/smaller size see: Si6954DQ D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3


    Original     		PDF Si9936DY Si4936DY Si6954DQ 51310--Rev. 18-Dec-96

    Si4410DY

    Abstract: Si4936DY Si6434DQ Si9410DY
    Text: Si9410DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size—see Si6434DQ D D D D SO-8


    Original     		PDF Si9410DY Si4410DY Si4936DY Si6434DQ S-51309--Rev. 18-Dec-96

    Si9936DY

    Abstract: Si4936DY Si6954DQ
    Text: Si9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V "3.9 Recommended upgrade: Si4936DY Lower profile/smaller size see: Si6954DQ D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3


    Original     		PDF Si9936DY Si4936DY Si6954DQ 51310--Rev. 18-Dec-96

    Si4936DY

    Abstract: Si6956DQ Si9936DY Si9956DY
    Text: Si9956DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.10 @ VGS = 10 V "3.5 0.20 @ VGS = 4.5 V "2.0 Recommended upgrade: Si4936DY or Si9936DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6956DQ D1 D1 D2 D2


    Original     		PDF Si9956DY Si4936DY Si9936DY Si6956DQ S-47958--Rev. 15-Apr-96

    Untitled

    Abstract: No abstract text available
    Text: Si4936DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.037 @ VGS = 10 V 5.8 0.055 @ VGS = 4.5 V 4.7 D TrenchFETr Power MOSFET D Lead (Pb)-Free Version is RoHS Compliant D1 SO-8 S1 1 8 D1 G1 2 7 D1


    Original     		PDF Si4936DY Si4936DY-T1 Si4936DY-T1--E3 S-50695--Rev. 18-Apr-05

    Si4936DY

    Abstract: Si6954DQ Si9936DY
    Text: Si9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V "3.9 Recommended upgrade: Si4936DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6954DQ D1 D1 D2 D2 SO-8 S1


    Original     		PDF Si9936DY Si4936DY Si6954DQ S-47958--Rev. 15-Apr-96

    Si4936DY

    Abstract: No abstract text available
    Text: Si4936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.037 @ VGS = 10 V "5.8 0.055 @ VGS = 4.5 V "4.7 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4936DY S-47958--Rev. 15-Apr-96

    Si4936DY

    Abstract: No abstract text available
    Text: Si4936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.037 @ VGS = 10 V "5.8 0.055 @ VGS = 4.5 V "4.7 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4936DY S-47958--Rev. 15-Apr-96

    Si4936DY

    Abstract: Si6956DQ Si9936DY Si9956DY
    Text: Si9956DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.10 @ VGS = 10 V "3.5 0.20 @ VGS = 4.5 V "2.0 Recommended upgrade: Si4936DY or Si9936DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6956DQ D1 D1 D2 D2


    Original     		PDF Si9956DY Si4936DY Si9936DY Si6956DQ S-47958--Rev. 15-Apr-96

    Si4936DY

    Abstract: Si6954DQ Si9936DY
    Text: Si9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V "3.9 Recommended upgrade: Si4936DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6954DQ D1 D1 D2 D2 SO-8 S1


    Original     		PDF Si9936DY Si4936DY Si6954DQ S-47958--Rev. 15-Apr-96

    Si4936DY

    Abstract: Si6956DQ Si9936DY Si9956DY
    Text: Si9956DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.10 @ VGS = 10 V "3.5 0.20 @ VGS = 4.5 V "2.0 Recommended upgrade: Si4936DY or Si9936DY Lower profile/smaller size see: Si6956DQ D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2


    Original     		PDF Si9956DY Si4936DY Si9936DY Si6956DQ S-51302--Rev. 18-Dec-96

    a-14-s

    Abstract: Si4410DY Si4936DY Si6434DQ Si9410DY
    Text: Si9410DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6434DQ


    Original     		PDF Si9410DY Si4410DY Si4936DY Si6434DQ S-47958--Rev. 15-Apr-96 a-14-s

    Si9410DY

    Abstract: Siliconix Si4410DY Si4936DY Si6434DQ
    Text: Si9410DY Siliconix N-Channel Enhancement-Mode MOSFET PRODUCT SUMMARY VDS V RDS(ON) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 30 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size—see Si6434DQ D D D D


    Original     		PDF Si9410DY Si4410DY Si4936DY Si6434DQ S-51309--Rev. 18-Dec-96 Siliconix

    Si4936DY

    Abstract: No abstract text available
    Text: Si4936DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(ON) (W) ID (A) 0.037 @ VGS = 10 V "5.8 0.055 @ VGS = 4.5 V "4.7 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET


    Original     		PDF Si4936DY S-49532--Rev. 02-Feb-98

    Si4936DY

    Abstract: fairchild NDS 9959
    Text: Si4936DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4936DY fairchild NDS 9959

    Si4936DY

    Abstract: No abstract text available
    Text: Si4936DY Dual N-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) 30 rDS(on) (W) ID (A) 0.037 @ VGS = 10 V "5.8 0.055 @ VGS = 4.5 V "4.7 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4936DY S-49532--Rev. 02-Feb-98

    Si4410DY

    Abstract: Si4936DY Si6434DQ Si9410DY
    Text: Si9410DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6434DQ


    Original     		PDF Si9410DY Si4410DY Si4936DY Si6434DQ S-47958--Rev. 15-Apr-96

    Si4936DY

    Abstract: No abstract text available
    Text: Si4936DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4936DY

    si6956

    Abstract: SI6956DQ
    Text: SÌ9956DY Dual N-Channel Enhancement-Mode MOSFET Product Summary rDS on ( ß ) Id (A) 0.10 @ VGs = 10 V ±3.5 0.20 @ VGs = 4.5 V ±2.0 V d s (V) 20 Recommended upgrade: Si4936DY or Si9936DY Lower profile!smaller size see: Si6956DQ Di Di D2 D2 Q Q Q Q SO-8


    OCR Scan     		PDF 9956DY Si4936DY Si9936DY Si6956DQ 18-Dec-96 S-51302-- si6956

    Untitled

    Abstract: No abstract text available
    Text: Tem ic Si4936DY Semiconductors Dual N-Channel 30-V D-S Rated MOSFET Product Sum m ary V D S (V ) r DS(on) (£2) I d (A ) 0.037 @ V Gs = 10 V ± 5 .8 0.055 @ V Gs = 4.5 V ± 4 .7 30 Di D i Q Q D2 D2 O O 6 Si 6 S2 SO -8 |X IX S2 X XI °i X 1 °i XI d2 G2 | 4


    OCR Scan     		PDF Si4936DY S-49532â 02-Feb-98 S2SM735 DD17flflT