SI6954DQ Search Results

Si6954DQ

Contextual Info: Si6954DQ Siliconix Dual NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V "3.9 0.095 @ VGS = 4.5 V "3.1 D1 D2 TSSOPĆ8 D1 S1 S1 G1 1 2 3 D 8 Si6954DQ 4 7 6 5 D2 S2 S2 G2 G1 G2 Top View S1 S2 NĆChannel MOSFET

Si6954DQ

Contextual Info: Si6954DQ Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V "3.9 0.095 @ VGS = 4.5 V "3.1 D1 D2 TSSOP-8 D1 S1 S1 G1 1 2 D 8 7 Si6954DQ 3 6 4 5 D2 S2 S2 G2 G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET

S-49534

Abstract: Si6954DQ
Contextual Info: Si6954DQ Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V "3.9 0.095 @ VGS = 4.5 V "3.1 D1 D2 TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 D Si6954DQ G1 G2 Top View S1 S2 N-Channel MOSFET

Si4936DY

Abstract: Si6954DQ Si9936DY
Contextual Info: Si9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V "3.9 Recommended upgrade: Si4936DY Lower profile/smaller size see: Si6954DQ D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3

Si9936DY

Abstract: Si4936DY Si6954DQ
Contextual Info: Si9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V "3.9 Recommended upgrade: Si4936DY Lower profile/smaller size see: Si6954DQ D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3

Contextual Info: Si6954DQ Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V "3.9 0.095 @ VGS = 4.5 V "3.1 D1 D2 TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 D Si6954DQ G1 G2 Top View S1 S2 N-Channel MOSFET

Si4936DY

Abstract: Si6954DQ Si9936DY
Contextual Info: Si9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V "3.9 Recommended upgrade: Si4936DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6954DQ D1 D1 D2 D2 SO-8 S1

S-49534

Abstract: Si6954DQ
Contextual Info: Si6954DQ Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V "3.9 0.095 @ VGS = 4.5 V "3.1 D1 D2 TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 D Si6954DQ G1 G2 Top View S1 S2 N-Channel MOSFET

Contextual Info: Tem ic Si6954DQ Semiconductors Dual N-Channel 30-V D-S Rated MOSFET Product Summary VDS(V) 30 r DS(on) (£2) I d (A) 0.065 @ V Gs = 10 V ±3.9 0.095 @ V Gs = 4.5 V ±3.1 Di Q D2 Q TSSOP-8 Si6954DQ Gi .J l G2 Top View 6 6 Si s2 N-Channel MOSFET N-Channel MOSFET

Si4936DY

Abstract: Si6954DQ Si9936DY
Contextual Info: Si9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V "3.9 Recommended upgrade: Si4936DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6954DQ D1 D1 D2 D2 SO-8 S1

Si6954DQ

Contextual Info: Si6954DQ Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V "3.9 0.095 @ VGS = 4.5 V "3.1 D1 D2 TSSOP-8 D1 S1 S1 G1 1 2 D 8 7 Si6954DQ 3 6 4 5 D2 S2 S2 G2 G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET

74234

Abstract: SI6954ADQ Si6954ADQ-T1 SI6954ADQ-T1-E3 Si6954DQ
Contextual Info: Specification Comparison Vishay Siliconix Si6954ADQ vs. Si6954DQ Description: Package: Pin Out: Dual N-Channel, 30 V D-S MOSFET TSSOP-8 Identical Part Number Replacements Si6954ADQ-T1-E3 Replaces Si6954DQ-T1-E3 Si6954ADQ-T1 Replaces Si6954DQ-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

MOSFET TSSOP-8 dual n-channel

Abstract: MOSFET TSSOP-8 Si6954DQ
Contextual Info: Si6954DQ Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V "3.9 0.095 @ VGS = 4.5 V "3.1 D1 D2 TSSOP-8 D1 S1 S1 G1 1 2 D 8 7 Si6954DQ 3 6 4 5 D2 S2 S2 G2 G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET

S-49534

Abstract: Si6954DQ
Contextual Info: Si6954DQ Dual N-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) 30 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V "3.9 0.095 @ VGS = 4.5 V "3.1 D1 D2 TSSOP-8 D1 S1 S1 G1 1 2 D 8 7 Si6954DQ 3 6 4 5 D2 S2 S2 G2 G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET

LTC1623CS8

Abstract: LTC1623I LTC1623IS8 LTC1623 LTC1623C LTC1623CMS8 regulator 16.23 v TM 1623
Contextual Info: LTC1623 SMBus Dual High Side Switch Controller U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SMBus and I2C Compatible Built-In Charge Pumps Drive N-Channel Switches 16 Available Switches on the Same Bus 0.6V VIL and 1.4V VIH for DATA and CLK

LTC1981ES5

Abstract: dual high side MOSFET driver with charge pump LTC1981 LTC1982 Si3442DV Si6925DQ 720 mosfet sot23 LTC1154
Contextual Info: LTC1981/LTC1982 Single and Dual Micropower High Side Switch Controllers in SOT-23 U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO No External Components Required Internal Voltage Triplers Produce High Side Gate Drive for Logic Level FETs Ultralow Power:

2n3906 equivalent

Abstract: ITE 8500 Ax 1023a 12V lead acid battery
Contextual Info: 19-1153; Rev 0; 12/96 A M X I A I Chemi st ry-I independent B a t t e r y Chargers _F e a t u r e s The M AX1647/M AX1648 provide the po w e r control neces­ sary to cha rge batteries of any chem istry. In the MAX1647, all charging functions are controlled via the Intel System

dual high side MOSFET driver with charge pump

Abstract: 19812fs LTC1981 LTC1981ES5 LTC1982 Si3442DV Si6925DQ US1080 682 MARKING SOT-23 LTC1154
Contextual Info: LTC1981/LTC1982 Single and Dual Micropower High Side Switch Controllers in SOT-23 U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO No External Components Required Internal Voltage Triplers Produce High Side Gate Drive for Logic Level FETs Ultralow Power:

V30114

Abstract: T0445 Si9730
Contextual Info: Si9730 Vishay Siliconix Dual-Cell Lithium Ion Battery Control IC FEATURES D D D D D D Over-Charge Protection Over-Discharge Protection Short Circuit Current Limiting Battery Open-Circuit Center Tap Protection Cell Voltage Balancing Undervoltage Lockout D D

Si9730

Contextual Info: Si9730 Vishay Siliconix Dual-Cell Lithium Ion Battery Control IC FEATURES D D D D D D Over-Charge Protection Over-Discharge Protection Short Circuit Current Limiting Battery Open-Circuit Center Tap Protection Cell Voltage Balancing Undervoltage Lockout D D

mosfet cross reference

Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Contextual Info: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P

2n3906 equivalent

Abstract: 1n4150 equivalent 4803 so-8 transistor 2N3906 smd 2A SOT23 2N7002 equivalent mosfet 4805 MAX1647 MAX1647EAP MAX1648 MAX1648ESE
Contextual Info: 19-1158; Rev 1; 12/02 Chemistry-Independent Battery Chargers The MAX1647 is available in a 20-pin SSOP with a 2mm profile height. The MAX1648 is available in a 16-pin SO package. _Applications Notebook Computers Personal Digital Assistants

DL20DC

Abstract: DL20C Si9730
Contextual Info: Si9730 Vishay Siliconix Dual-Cell Lithium Ion Battery Control IC FEATURES D D D D D D Over-Charge Protection Over-Discharge Protection Short Circuit Current Limiting Battery Open-Circuit Center Tap Protection Cell Voltage Balancing Undervoltage Lockout D D

2n3906 equivalent

Abstract: 1n4150 equivalent lead acid 12V battery chargers mosfet 4805 2N7002 equivalent MAX1647 transistor 2N3906 smd 2A SOT23 MAX1647EAP MAX1648 MAX1648ESE
Contextual Info: 19-1158; Rev 0; 12/96 Chemistry-Independent Battery Chargers The MAX1647/MAX1648 provide the power control necessary to charge batteries of any chemistry. In the MAX1647, all charging functions are controlled via the Intel System Management Bus SMBus interface. The SMBus 2-wire