SI4936C Search Results
SI4936C Price and Stock
Vishay Siliconix SI4936CDY-T1-GE3MOSFET 2N-CH 30V 5.8A 8SOIC |
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SI4936CDY-T1-GE3 | Cut Tape | 2,143 | 1 |
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SI4936CDY-T1-GE3 | Bulk | 2,500 |
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SI4936CDY-T1-GE3 | 22,500 | 1 |
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Vishay Siliconix SI4936CDY-T1-E3MOSFET 2N-CH 30V 5.8A 8SOIC |
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SI4936CDY-T1-E3 | Cut Tape | 1 |
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Vishay Intertechnologies SI4936CDY-T1-GE3DUAL N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI4936CDY-T1-GE3) |
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SI4936CDY-T1-GE3 | Reel | 6,000 | 2,500 |
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SI4936CDY-T1-GE3 | 21,269 |
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SI4936CDY-T1-GE3 | Cut Tape | 110 | 1 |
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SI4936CDY-T1-GE3 | 1,060 |
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SI4936CDY-T1-GE3 | Reel | 2,500 | 2,500 |
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SI4936CDY-T1-GE3 | 1,450 | 1 |
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SI4936CDY-T1-GE3 | 14 Weeks | 2,500 |
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SI4936CDY-T1-GE3 | 13 Weeks | 2,500 |
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SI4936CDY-T1-GE3 | 7,364 |
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Vishay Intertechnologies SI4936CDY-T1-E3Transistor MOSFET Array Dual N-Channel 30V 5A 8-Pin SO T/R - Tape and Reel (Alt: SI4936CDY-T1-E3) |
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SI4936CDY-T1-E3 | Reel | 17 Weeks | 2,500 |
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SI4936CDY-T1-E3 | 1,038 |
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SI4936CDY-T1-E3 | Reel | 2,500 |
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Vishay Intertechnologies SI4936CDY-T1-GE3.Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:5.8A; Continuous Drain Current Id P Channel:-; No. Of Pins:8Pins; Product Range:- Rohs Compliant: No |Vishay SI4936CDY-T1-GE3. |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4936CDY-T1-GE3. | Reel | 2,500 |
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SI4936C Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SI4936CDY-T1-E3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 5.8A SO8 | Original | |||
SI4936CDY-T1-GE3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 5.8A 8-SOIC | Original |
SI4936C Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: New Product Si4936CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si4936CDY Si4936CDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
4AB20Contextual Info: Si4936CDY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 30 ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) APPLICATIONS |
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Si4936CDY-T1-E3 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 4AB20 | |
Contextual Info: New Product Si4936CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si4936CDY Si4936CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: New Product Si4936CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si4936CDY Si4936CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: New Product Si4936CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si4936CDY Si4936CDY-T1-GE3 11-Mar-11 | |
5310
Abstract: 2951 m 5672 AN609
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Si4936CDY AN609, 16-Dec-08 5310 2951 m 5672 AN609 | |
si4936b
Abstract: Si4936BDY-T1-E3 Si4936BDY-T1-GE3 Si4936CDY-T1-GE3 Si4936BDY Si4936CDY SI4936c
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Si4936CDY Si4936BDY Si4936CDY-T1-GE3 Si4936BDY-T1-GE3 Si4936BDY-T1-E3 15-Jul-09 si4936b SI4936c | |
Contextual Info: Si4936CDY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 30 ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) APPLICATIONS |
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Si4936CDY-T1-E3 2002/95/EC 11-Mar-11 | |
Contextual Info: Si4936CDY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 30 ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) APPLICATIONS |
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Si4936CDY-T1-E3 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SPICE Device Model Si4936CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range |
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Si4936CDY 18-Jul-08 | |
Si4936CDY-T1-GE3Contextual Info: New Product Si4936CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si4936CDY Si4936CDY-T1-GE3 11-Mar-11 | |
Si4936CDY-T1-GE3
Abstract: 69097
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Si4936CDY Si4936CDY-T1-GE3 18-Jul-08 69097 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 | |
Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
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Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 |