SI4936 Search Results

Contextual Info: Si4936DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Si4936BDY

Contextual Info: SPICE Device Model Si4936BDY Vishay Siliconix Dual N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4936DY

Contextual Info: Si4936DY Siliconix Dual NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.037 @ VGS = 10 V "5.8 0.055 @ VGS = 4.5 V "4.7 D1 D1 D2 D2 SOĆ8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 NĆChannel MOSFET S2 NĆChannel MOSFET

Contextual Info: New Product Si4936CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

4AB20

Contextual Info: Si4936CDY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 30 ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) APPLICATIONS

74469

Abstract: 70306 SI4936BDY-T1-E3
Contextual Info: New Product Si4936BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.035 at VGS = 10 V 6.9 0.051 at VGS = 4.5 V 5.7 • TrenchFET Power MOSFET Qg (Typ) APPLICATIONS 4.5 nC • Low Current DC/DC Conversion

Si4936DY

Abstract: Si4936DY-T1
Contextual Info: Si4936DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.037 @ VGS = 10 V 5.8 0.055 @ VGS = 4.5 V 4.7 D TrenchFETr Power MOSFET D Lead (Pb)-Free Version is RoHS Compliant D1 SO-8 S1 1 8 D1 G1 2 7 D1

SI4936DY

Abstract: av 66
Contextual Info: Si4936DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Si4936DY

Abstract: Si6954DQ Si9936DY
Contextual Info: Si9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V "3.9 Recommended upgrade: Si4936DY Lower profile/smaller size see: Si6954DQ D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3

Si4410DY

Abstract: Si4936DY Si6434DQ Si9410DY
Contextual Info: Si9410DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size—see Si6434DQ D D D D SO-8

Si9936DY

Abstract: Si4936DY Si6954DQ
Contextual Info: Si9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V "3.9 Recommended upgrade: Si4936DY Lower profile/smaller size see: Si6954DQ D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3

Contextual Info: New Product Si4936CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si4936ADY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.036 @ VGS = 10 V 5.9 0.053 @ VGS = 4.5 V 4.9 D TrenchFETr Power MOSFET D Lead (Pb)-Free Version is RoHS Compliant D1 Available D2 SO-8 S1 1

Si4936DY

Abstract: Si6956DQ Si9936DY Si9956DY
Contextual Info: Si9956DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.10 @ VGS = 10 V "3.5 0.20 @ VGS = 4.5 V "2.0 Recommended upgrade: Si4936DY or Si9936DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6956DQ D1 D1 D2 D2

si6956

Abstract: SI6956DQ
Contextual Info: SÌ9956DY Dual N-Channel Enhancement-Mode MOSFET Product Summary rDS on ( ß ) Id (A) 0.10 @ VGs = 10 V ±3.5 0.20 @ VGs = 4.5 V ±2.0 V d s (V) 20 Recommended upgrade: Si4936DY or Si9936DY Lower profile!smaller size see: Si6956DQ Di Di D2 D2 Q Q Q Q SO-8

Si4936DY

Abstract: Si6954DQ Si9936DY
Contextual Info: Si9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V "3.9 Recommended upgrade: Si4936DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6954DQ D1 D1 D2 D2 SO-8 S1

Si4936DY

Contextual Info: Si4936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.037 @ VGS = 10 V "5.8 0.055 @ VGS = 4.5 V "4.7 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)

Si4936DY

Contextual Info: Si4936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.037 @ VGS = 10 V "5.8 0.055 @ VGS = 4.5 V "4.7 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)

Si4936DY

Abstract: Si6956DQ Si9936DY Si9956DY
Contextual Info: Si9956DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.10 @ VGS = 10 V "3.5 0.20 @ VGS = 4.5 V "2.0 Recommended upgrade: Si4936DY or Si9936DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6956DQ D1 D1 D2 D2

Contextual Info: Tem ic Si4936DY Semiconductors Dual N-Channel 30-V D-S Rated MOSFET Product Sum m ary V D S (V ) r DS(on) (£2) I d (A ) 0.037 @ V Gs = 10 V ± 5 .8 0.055 @ V Gs = 4.5 V ± 4 .7 30 Di D i Q Q D2 D2 O O 6 Si 6 S2 SO -8 |X IX S2 X XI °i X 1 °i XI d2 G2 | 4

Contextual Info: Si4936ADY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.036 at VGS = 10 V 5.9 0.053 at VGS = 4.5 V 4.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC

74490

Abstract: SI4936BDY-T1-E3 Si4936BDY Si4936ADY-T1-E3 Si4936ADY Si4936ADY-T1
Contextual Info: Specification Comparison Vishay Siliconix Si4936BDY vs. Si4936ADY Description: Package: Pin Out: Dual P-Channel, 30 V D-S MOSFET SO-8 Identical Part Number Replacements Si4936BDY-T1-E3 Replaces Si4936ADY-T1-E3 Si4936BDY-T1-E3 Replaces Si4936ADY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Contextual Info: New Product Si4936CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si4936DY

Abstract: Si6954DQ Si9936DY
Contextual Info: Si9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V "3.9 Recommended upgrade: Si4936DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6954DQ D1 D1 D2 D2 SO-8 S1