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    SI4936 Price and Stock

    Vishay Siliconix SI4936ADY-T1-E3

    MOSFET 2N-CH 30V 4.4A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4936ADY-T1-E3 Digi-Reel 15,033 1
    • 1 $2.72
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    SI4936ADY-T1-E3 Cut Tape 15,033 1
    • 1 $2.72
    • 10 $1.755
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    SI4936ADY-T1-E3 Reel 12,500 2,500
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    RS SI4936ADY-T1-E3 Bulk 403 1
    • 1 $1.53
    • 10 $1.45
    • 100 $1.3
    • 1000 $1.3
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    Vishay Siliconix SI4936CDY-T1-GE3

    MOSFET 2N-CH 30V 5.8A 8SOIC
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    DigiKey SI4936CDY-T1-GE3 Digi-Reel 7,408 1
    • 1 $1
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    SI4936CDY-T1-GE3 Cut Tape 7,408 1
    • 1 $1
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    SI4936CDY-T1-GE3 Reel 5,000 2,500
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    RS SI4936CDY-T1-GE3 Bulk 2,500
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    New Advantage Corporation SI4936CDY-T1-GE3 5,000 1
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    Vishay Siliconix SI4936BDY-T1-E3

    MOSFET 2N-CH 30V 6.9A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4936BDY-T1-E3 Cut Tape 119 1
    • 1 $1.47
    • 10 $0.929
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    SI4936BDY-T1-E3 Digi-Reel 119 1
    • 1 $1.47
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    SI4936BDY-T1-E3 Reel 2,500
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    RS SI4936BDY-T1-E3 Bulk 2,500
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    Rochester Electronics LLC SI4936DY

    MOSFET 2N-CH 30V 5.8A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4936DY Bulk 310
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    Vishay Siliconix SI4936CDY-T1-E3

    MOSFET 2N-CH 30V 5.8A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4936CDY-T1-E3 Reel 2,500
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    SI4936 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4936 Fairchild Semiconductor Dual N-Channel Enhancement Mode MOSFET Original PDF
    SI4936 Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET Original PDF
    Si4936ADY Vishay Intertechnology Dual N-Channel 30-V (D-S) MOSFET Original PDF
    SI4936ADY Vishay Siliconix MOSFETs Original PDF
    Si4936ADY SPICE Device Model Vishay Dual N-Channel 30-V (D-S) MOSFET Original PDF
    Si4936ADY-T1 Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET Original PDF
    SI4936ADY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 4.4A 8-SOIC Original PDF
    SI4936ADY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 4.4A 8-SOIC Original PDF
    SI4936BDY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 6.9A 8-SOIC Original PDF
    SI4936BDY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 6.9A 8-SOIC Original PDF
    SI4936CDY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 5.8A SO8 Original PDF
    SI4936CDY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 5.8A 8-SOIC Original PDF
    Si4936DY Fairchild Semiconductor Dual N-Channel Enhancement Mode MOSFET Original PDF
    Si4936DY Fairchild Semiconductor Dual N-Channel Enhancement Mode MOSFET Original PDF
    SI4936DY Fairchild Semiconductor Dual N-Channel Enhancement Mode MOSFET Original PDF
    Si4936DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI4936DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET Original PDF
    SI4936DY_NL Fairchild Semiconductor Dual N-Channel Enhancement Mode MOSFET Original PDF

    SI4936 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si4936DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original
    PDF Si4936DY

    Si4936BDY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4936BDY Vishay Siliconix Dual N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si4936BDY S-71048Rev. 21-May-07

    Si4936DY

    Abstract: No abstract text available
    Text: Si4936DY Siliconix Dual NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.037 @ VGS = 10 V "5.8 0.055 @ VGS = 4.5 V "4.7 D1 D1 D2 D2 SOĆ8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 NĆChannel MOSFET S2 NĆChannel MOSFET


    Original
    PDF Si4936DY S42148Rev.

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4936CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si4936CDY Si4936CDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    4AB20

    Abstract: No abstract text available
    Text: Si4936CDY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 30 ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) APPLICATIONS


    Original
    PDF Si4936CDY-T1-E3 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 4AB20

    74469

    Abstract: 70306 SI4936BDY-T1-E3
    Text: New Product Si4936BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.035 at VGS = 10 V 6.9 0.051 at VGS = 4.5 V 5.7 • TrenchFET Power MOSFET Qg (Typ) APPLICATIONS 4.5 nC • Low Current DC/DC Conversion


    Original
    PDF Si4936BDY Si4936BDY-T1-E3 18-Jul-08 74469 70306

    Si4936DY

    Abstract: Si4936DY-T1
    Text: Si4936DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.037 @ VGS = 10 V 5.8 0.055 @ VGS = 4.5 V 4.7 D TrenchFETr Power MOSFET D Lead (Pb)-Free Version is RoHS Compliant D1 SO-8 S1 1 8 D1 G1 2 7 D1


    Original
    PDF Si4936DY Si4936DY-T1 Si4936DY-T1--E3 18-Jul-08

    SI4936DY

    Abstract: av 66
    Text: Si4936DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original
    PDF Si4936DY av 66

    Si4936DY

    Abstract: Si6954DQ Si9936DY
    Text: Si9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V "3.9 Recommended upgrade: Si4936DY Lower profile/smaller size see: Si6954DQ D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3


    Original
    PDF Si9936DY Si4936DY Si6954DQ 51310--Rev. 18-Dec-96

    Si4410DY

    Abstract: Si4936DY Si6434DQ Si9410DY
    Text: Si9410DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size—see Si6434DQ D D D D SO-8


    Original
    PDF Si9410DY Si4410DY Si4936DY Si6434DQ S-51309--Rev. 18-Dec-96

    Si9936DY

    Abstract: Si4936DY Si6954DQ
    Text: Si9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V "3.9 Recommended upgrade: Si4936DY Lower profile/smaller size see: Si6954DQ D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3


    Original
    PDF Si9936DY Si4936DY Si6954DQ 51310--Rev. 18-Dec-96

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4936CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si4936CDY Si4936CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4936ADY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.036 @ VGS = 10 V 5.9 0.053 @ VGS = 4.5 V 4.9 D TrenchFETr Power MOSFET D Lead (Pb)-Free Version is RoHS Compliant D1 Available D2 SO-8 S1 1


    Original
    PDF Si4936ADY Si4936ADY-T1 Si4936ADY-T1--E3 18-Jul-08

    Si4936DY

    Abstract: Si6956DQ Si9936DY Si9956DY
    Text: Si9956DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.10 @ VGS = 10 V "3.5 0.20 @ VGS = 4.5 V "2.0 Recommended upgrade: Si4936DY or Si9936DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6956DQ D1 D1 D2 D2


    Original
    PDF Si9956DY Si4936DY Si9936DY Si6956DQ S-47958--Rev. 15-Apr-96

    Si4936DY

    Abstract: Si6954DQ Si9936DY
    Text: Si9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V "3.9 Recommended upgrade: Si4936DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6954DQ D1 D1 D2 D2 SO-8 S1


    Original
    PDF Si9936DY Si4936DY Si6954DQ S-47958--Rev. 15-Apr-96

    Si4936DY

    Abstract: No abstract text available
    Text: Si4936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.037 @ VGS = 10 V "5.8 0.055 @ VGS = 4.5 V "4.7 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original
    PDF Si4936DY S-47958--Rev. 15-Apr-96

    Si4936DY

    Abstract: No abstract text available
    Text: Si4936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.037 @ VGS = 10 V "5.8 0.055 @ VGS = 4.5 V "4.7 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original
    PDF Si4936DY S-47958--Rev. 15-Apr-96

    Si4936DY

    Abstract: Si6956DQ Si9936DY Si9956DY
    Text: Si9956DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.10 @ VGS = 10 V "3.5 0.20 @ VGS = 4.5 V "2.0 Recommended upgrade: Si4936DY or Si9936DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6956DQ D1 D1 D2 D2


    Original
    PDF Si9956DY Si4936DY Si9936DY Si6956DQ S-47958--Rev. 15-Apr-96

    Untitled

    Abstract: No abstract text available
    Text: Si4936ADY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.036 at VGS = 10 V 5.9 0.053 at VGS = 4.5 V 4.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original
    PDF Si4936ADY 2002/95/EC Si4936ADY-T1-E3 Si4936ADY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    74490

    Abstract: SI4936BDY-T1-E3 Si4936BDY Si4936ADY-T1-E3 Si4936ADY Si4936ADY-T1
    Text: Specification Comparison Vishay Siliconix Si4936BDY vs. Si4936ADY Description: Package: Pin Out: Dual P-Channel, 30 V D-S MOSFET SO-8 Identical Part Number Replacements Si4936BDY-T1-E3 Replaces Si4936ADY-T1-E3 Si4936BDY-T1-E3 Replaces Si4936ADY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original
    PDF Si4936BDY Si4936ADY Si4936BDY-T1-E3 Si4936ADY-T1-E3 Si4936ADY-T1 26-Jan-07 74490

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4936CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si4936CDY Si4936CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si4936DY

    Abstract: Si6954DQ Si9936DY
    Text: Si9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V "3.9 Recommended upgrade: Si4936DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6954DQ D1 D1 D2 D2 SO-8 S1


    Original
    PDF Si9936DY Si4936DY Si6954DQ S-47958--Rev. 15-Apr-96

    si6956

    Abstract: SI6956DQ
    Text: SÌ9956DY Dual N-Channel Enhancement-Mode MOSFET Product Summary rDS on ( ß ) Id (A) 0.10 @ VGs = 10 V ±3.5 0.20 @ VGs = 4.5 V ±2.0 V d s (V) 20 Recommended upgrade: Si4936DY or Si9936DY Lower profile!smaller size see: Si6956DQ Di Di D2 D2 Q Q Q Q SO-8


    OCR Scan
    PDF 9956DY Si4936DY Si9936DY Si6956DQ 18-Dec-96 S-51302-- si6956

    Untitled

    Abstract: No abstract text available
    Text: Tem ic Si4936DY Semiconductors Dual N-Channel 30-V D-S Rated MOSFET Product Sum m ary V D S (V ) r DS(on) (£2) I d (A ) 0.037 @ V Gs = 10 V ± 5 .8 0.055 @ V Gs = 4.5 V ± 4 .7 30 Di D i Q Q D2 D2 O O 6 Si 6 S2 SO -8 |X IX S2 X XI °i X 1 °i XI d2 G2 | 4


    OCR Scan
    PDF Si4936DY S-49532â 02-Feb-98 S2SM735 DD17flflT