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    Vishay Siliconix SI4823DY-T1-E3

    MOSFET P-CH 20V 4.1A 8SO
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    Vishay Siliconix SI4823DY-T1-GE3

    MOSFET P-CH 20V 4.1A 8SO
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    Others SI4823DYT1GE3

    AVAILABLE EU
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    ComSIT USA SI4823DYT1GE3 2,500
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    SI4823DY Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4823DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 4.1A 8-SOIC Original PDF
    SI4823DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 4.1A 8-SOIC Original PDF

    SI4823DY Datasheets Context Search

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    SI4823DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4823DY Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4823DY 18-Jul-08

    SI4823DY

    Abstract: No abstract text available
    Text: Si4823DY Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.108 at VGS = - 4.5 V - 4.1 0.175 at VGS = - 2.5 V - 3.3 VDS (V) - 20 Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si4823DY 2002/95/EC Si4823DY-T1-E3 Si4823DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SI4823DY

    Abstract: No abstract text available
    Text: Si4823DY Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.108 at VGS = - 4.5 V - 4.1 0.175 at VGS = - 2.5 V - 3.3 VDS (V) - 20 Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si4823DY 2002/95/EC Si4823DY-T1-E3 Si4823DY-T1-GE3 11-Mar-11

    Si4823DY-T1-E3

    Abstract: SI4823DY
    Text: Si4823DY Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.108 at VGS = - 4.5 V - 4.1 0.175 at VGS = - 2.5 V - 3.3 VDS (V) - 20 Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si4823DY 2002/95/EC Si4823DY-T1-E3 18-Jul-08

    P-channel power mosfet SO-8

    Abstract: SI4823DY
    Text: Si4823DY Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.108 at VGS = - 4.5 V - 4.1 0.175 at VGS = - 2.5 V - 3.3 VDS (V) - 20 Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si4823DY 2002/95/EC Si4823DY-emarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 P-channel power mosfet SO-8

    Si4823DY-T1-E3

    Abstract: si4823 SI4823DY
    Text: Si4823DY Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.108 at VGS = - 4.5 V - 4.1 0.175 at VGS = - 2.5 V - 3.3 VDS (V) - 20 Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si4823DY 2002/95/EC Si4823DY-T1-E3 11-Mar-11 si4823

    SI4823DY

    Abstract: No abstract text available
    Text: Si4823DY Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.108 at VGS = - 4.5 V - 4.1 0.175 at VGS = - 2.5 V - 3.3 VDS (V) - 20 Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si4823DY 2002/95/EC Si4823DY-electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    book,circuit

    Abstract: Si4823DY-T1-E3 SI4823DY
    Text: New Product Si4823DY Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)d 0.108 at VGS = - 4.5 V - 4.1 0.175 at VGS = - 2.5 V - 3.3 Qg (Typ.) 4 nC • LITTLE FOOT Plus Schottky • 100 % Rg Tested


    Original     		PDF Si4823DY 2002/95/EC Si4823DY-T1-E3 18-Jul-08 book,circuit

    SI4823DY

    Abstract: No abstract text available
    Text: New Product Si4823DY Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)d 0.108 at VGS = - 4.5 V - 4.1 0.175 at VGS = - 2.5 V - 3.3 Qg (Typ.) 4 nC • LITTLE FOOT Plus Schottky • 100 % Rg Tested


    Original     		PDF Si4823DY 2002/96/EC Si4823DY-T1-E3 18-Jul-08

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477