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    SI4686DY Price and Stock

    Vishay Siliconix SI4686DY-T1-E3

    MOSFET N-CH 30V 18.2A 8SO
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    DigiKey SI4686DY-T1-E3 Cut Tape 6,518 1
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    SI4686DY-T1-E3 Digi-Reel 6,518 1
    • 1 $1.94
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    SI4686DY-T1-E3 Reel 2,500 2,500
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    Velocity Electronics SI4686DY-T1-E3 7,500
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    Vishay Siliconix SI4686DY-T1-GE3

    MOSFET N-CH 30V 18.2A 8SO
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    DigiKey SI4686DY-T1-GE3 Cut Tape 6,279 1
    • 1 $2.1
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    SI4686DY-T1-GE3 Digi-Reel 6,279 1
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    SI4686DY-T1-GE3 Reel 2,500 2,500
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    Vishay Intertechnologies SI4686DY-T1-E3

    Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4686DY-T1-E3)
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    Avnet Americas SI4686DY-T1-E3 Reel 17 Weeks 2,500
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    Mouser Electronics SI4686DY-T1-E3 4,855
    • 1 $1.62
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    Newark SI4686DY-T1-E3 Cut Tape 2,500
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    SI4686DY-T1-E3 Reel 2,500
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    Bristol Electronics SI4686DY-T1-E3 2,576
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    Quest Components SI4686DY-T1-E3 284
    • 1 $1.8925
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    TTI SI4686DY-T1-E3 Reel 2,500
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    TME SI4686DY-T1-E3 1,229 1
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    Avnet Asia SI4686DY-T1-E3 19 Weeks 2,500
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    EBV Elektronik SI4686DY-T1-E3 18 Weeks 2,500
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    Vishay Intertechnologies SI4686DY-T1-GE3

    Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4686DY-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4686DY-T1-GE3 Reel 17 Weeks 2,500
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    • 10000 $0.54479
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    Mouser Electronics SI4686DY-T1-GE3
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    Newark SI4686DY-T1-GE3 Reel 2,500
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    SI4686DY-T1-GE3 Cut Tape 2,500
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    TTI SI4686DY-T1-GE3 Reel 2,500
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    EBV Elektronik SI4686DY-T1-GE3 18 Weeks 2,500
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    Others SI4686DY

    AVAILABLE EU
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    ComSIT USA SI4686DY 2,500
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    SI4686DY Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4686DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 18.2A 8-SOIC Original PDF
    SI4686DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 18.2A 8-SOIC Original PDF

    SI4686DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    si4686

    Abstract: SI4686DY SI4686DY-T1-E3 si4686dyt1e3
    Text: Si4686DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0095 @ VGS = 10 V 18.2 0.014 @ VGS = 4.5 V 15 VDS (V) 30 Qg (Typ) 9 2 nC 9.2 D Extremely Low Qgd WFETr Technology for Low Switching Losses D TrenchFETr Power MOSFET


    Original
    PDF Si4686DY Si4686DY-T1--E3 S-51169--Rev. 20-Jun-05 si4686 SI4686DY-T1-E3 si4686dyt1e3

    si4686dy

    Abstract: SI4686
    Text: SPICE Device Model Si4686DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si4686DY S-52631Rev. 02-Jan-06 SI4686

    Si4686DY

    Abstract: Si4686DY-T1-E3 Si4686DY-T1-GE3 SI4686
    Text: Si4686DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0095 at VGS = 10 V 18.2 0.014 at VGS = 4.5 V 15 VDS (V) 30 Qg (Typ.) 9.2 nC • Halogen-free According to IEC 61249-2-21 Available • Extremely Low Qgd WFET Technology


    Original
    PDF Si4686DY Si4686DY-T1-E3 Si4686DY-T1-GE3 11-Mar-11 SI4686

    SI4686DY-T1-E3

    Abstract: No abstract text available
    Text: Si4686DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0095 @ VGS = 10 V 18.2 0.014 @ VGS = 4.5 V 15 VDS (V) 30 Qg (Typ) 9 2 nC 9.2 D Extremely Low Qgd WFETr Technology for Low Switching Losses D TrenchFETr Power MOSFET


    Original
    PDF Si4686DY Si4686DY-T1--E3 18-Jul-08 SI4686DY-T1-E3

    SI4686

    Abstract: Si4686DY-T1-E3 Si4686DY 51169 TR230
    Text: Si4686DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0095 @ VGS = 10 V 18.2 0.014 @ VGS = 4.5 V 15 VDS (V) 30 Qg (Typ) 9 2 nC 9.2 D Extremely Low Qgd WFETr Technology for Low Switching Losses D TrenchFETr Power MOSFET


    Original
    PDF Si4686DY Si4686DY-T1--E3 08-Apr-05 SI4686 Si4686DY-T1-E3 51169 TR230

    Untitled

    Abstract: No abstract text available
    Text: Si4686DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0095 at VGS = 10 V 18.2 0.014 at VGS = 4.5 V 15 VDS (V) 30 Qg (Typ.) 9.2 nC • Halogen-free According to IEC 61249-2-21 Available • Extremely Low Qgd WFET Technology


    Original
    PDF Si4686DY Si4686DY-T1-E3 Si4686DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI4686

    Abstract: Si4686DY Si4686DY-T1-E3 Si4686DY-T1-GE3
    Text: Si4686DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0095 at VGS = 10 V 18.2 0.014 at VGS = 4.5 V 15 VDS (V) 30 Qg (Typ.) 9.2 nC • Halogen-free According to IEC 61249-2-21 Available • Extremely Low Qgd WFET Technology


    Original
    PDF Si4686DY Si4686DY-T1-E3 Si4686DY-T1-GE3 18-Jul-08 SI4686

    SI4686

    Abstract: 74610 3369 3844 Si4686DY AN609
    Text: Si4686DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    PDF Si4686DY AN609 09-May-07 SI4686 74610 3369 3844

    Si4686DY

    Abstract: SI4686
    Text: SPICE Device Model Si4686DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si4686DY 18-Jul-08 SI4686

    Untitled

    Abstract: No abstract text available
    Text: Si4686DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0095 at VGS = 10 V 18.2 0.014 at VGS = 4.5 V 15 VDS (V) 30 Qg (Typ.) 9.2 nC • Halogen-free According to IEC 61249-2-21 Available • Extremely Low Qgd WFET Technology


    Original
    PDF Si4686DY Si4686DY-T1-E3 Si4686DY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si4686DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0095 at VGS = 10 V 18.2 0.014 at VGS = 4.5 V 15 VDS (V) 30 Qg (Typ.) 9.2 nC • Halogen-free According to IEC 61249-2-21 Available • Extremely Low Qgd WFET Technology


    Original
    PDF Si4686DY Si4686DY-T1-E3 Si4686DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    cx3804

    Abstract: pegatron pegatron A35 A35 pegatron diode c0510 pegatron a24 Cx3808 q8607 IT8752E tpc8118
    Text: 5 4 3 M52V BLOCK DIAGRAM 2 1 Power CPU VCORE PENRYN DC&QC Page 80 System Page 3~5 D D Page 81 FSB 1066MHz 1.5VS & 1.05VS LCD Panel Page 82 Page 45 PCIE x16 MXM CRT DDR2 800MHz CANTIGA nVIDIA NB9x Page 46 DDR & VTT DDR2 So-DIMM Page 83 Page 7~9 Page 70 +2.5VS


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    PDF 1066MHz 800MHz IT8752E RTL8111C RJ45/RJ11 G50VX D8107 G60VX cx3804 pegatron pegatron A35 A35 pegatron diode c0510 pegatron a24 Cx3808 q8607 IT8752E tpc8118

    C8816

    Abstract: ricoh r5c833 C2335 IT8510 nvidia nb8 vga board l3404 asus CON61 R5600 D8103
    Text: 5 4 3 2 1 AC_BAT_SYS 0925 +5VO 0925 + Q8200 R8209 4.7Ohm D + 1 D1_1 G1 8 2 D1_2 S1/D2_3 7 3 G2 S1/D2_2 6 4 S2 S1/D2_1 5 G D +1.05VO S Q8201 SI4800BDY @ JP8203 1 C8211 0.1UF/50V MLCC/+/-10% R8206 0Ohm C8213 4.7UF/6.3V MLCC/+/-10% 1 2 TPC28T T8209 TPC28T T8216


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    PDF Q8200 R8209 D8202 RB717F R8217 10Ohm C8213 U8200 R8206 C8211 C8816 ricoh r5c833 C2335 IT8510 nvidia nb8 vga board l3404 asus CON61 R5600 D8103

    SLB9635TT12

    Abstract: SLB9635TT1.2 32 inch TV samsung lcd Schematic fairchild diode smd code aa35 SC454 slb9635 BA41-00905A 20B3 diode BA09-00009A B503 F
    Text: SENS X360 A B C D 4 SAMSUNG PROPRIETARY 3 4 HJ KIM Jun PARK T.R. Date 3 JS EUH APPROVAL : Dev. Step Revision CHECK BA41-00906A GCE : PR/MP : 1.1 DRAW Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page.


    Original
    PDF BA41-00905A 220nF 12MHZ BAV99LT1 100nF MX25L4005AM2C-12G 15-A4 14-C2 14-C2 SLB9635TT12 SLB9635TT1.2 32 inch TV samsung lcd Schematic fairchild diode smd code aa35 SC454 slb9635 20B3 diode BA09-00009A B503 F

    ene kb3926qf

    Abstract: ene kb3926qf d2 KB3926QF A1 ene kb3926qf c0 kb3926qf c0 kb3926qf d2 kb3926 apl*5606 92HP61B7X5 AT5231
    Text: 1 2 3 4 5 7 8 01 UT7D BLOCK DIAGRAM PCB STACK UP 8L CPU THERMAL SENSOR CPU Penryn LAYER 1 : TOP A 6 LAYER 2 : SGND 14.318MHz PAGE 4 A 478P uPGA /45W PAGE 3,4 LAYER 3 : IN1 CLK_CPU_BCLK,CLK_CPU_BCLK# LAYER 4 : SVCC CLOCK GEN CLK_MCH_BCLK,CLK_MCH_BCLK# DREFCLK,DREFCLK#


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    PDF 318MHz RJ-45 ALPRS355B MLF64PIN 27MHz PAG209 1U/10V PC206 PR199 PR200 ene kb3926qf ene kb3926qf d2 KB3926QF A1 ene kb3926qf c0 kb3926qf c0 kb3926qf d2 kb3926 apl*5606 92HP61B7X5 AT5231

    AC82PM45

    Abstract: AC82GM45 KB926 AF82801IBM SLB8Q N10M-GE1-S G545A1 NV10M-GS tps51620 LA-5081P KIWA7
    Text: A B C D E 1 1 KIWA7/A8 2 2 Schematics Document Mobile Penryn uFCPGA with Intel Cantiga_GM/PM+ICH9-M core logic 3 3 REV:0.4 4 4 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification 2008/03/25 Deciphered Date 2008/04/ Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL


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    PDF R1089, C1162 C1163, C1164 C1165 R1095 R1090, R1091, R1092, R1093 AC82PM45 AC82GM45 KB926 AF82801IBM SLB8Q N10M-GE1-S G545A1 NV10M-GS tps51620 LA-5081P KIWA7

    c3148

    Abstract: it8511te D8802 asus 2C1208 RAY 33A A23 851-1 diode C1108 d1902 C3152
    Text: A B C D E F6E SCHEMATIC Revision 1.10 1 1 Content PAGE PAGE SYSTEM PAGE REF. 2 3 4 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 CPU-MEROM 1 CPU-MEROM(2) CPU CAP, Thermal Senor


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    PDF ICS9LPR363CGLF -965GM ISL6227 PMN45EN MAX8632 c3148 it8511te D8802 asus 2C1208 RAY 33A A23 851-1 diode C1108 d1902 C3152

    K0321

    Abstract: 9lprs WPCE773LA0DG finger probe USB48MHZ g822 1D05V foxconn TPS2231 RT9025-25PSP-GP
    Text: 5 Crystal 14.318MHz 4 2 DDR3 37 15 667/800/1066MHz@1.05V CRT SWITCH PI5C3257QE AGTL+ CPU I/F INTEGRATED GRAHPICS PCIex16 LVDS, CRT I/F 46 ICH9M OZ711MZ030,31 SPI BIOS 4MB 6 PCIe ports 42 PCI/PCI BRIDGE 38 MIC In ACPI 2.0 12 USB 2.0/1.1 ports High Definition Audio


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    PDF 318MHz 9LPRS365 4Z901 TPS51125 EMC2102 PI5C3257QE PS8122QFN48G TPS51124 667/800/1066MHz K0321 9lprs WPCE773LA0DG finger probe USB48MHZ g822 1D05V foxconn TPS2231 RT9025-25PSP-GP

    TPS51125

    Abstract: RTM875N-606-VD-GRT RTM875N-606-VD wistron MX25L16 1D05V 9LPRS365BKL ich9 JMB385 C3771
    Text: 5 4 3 2 Big Bear 2 Block Diagram 3D3V_S5 23 SYSTEM DC/DC HOST BUS DDR2 DIMM1 TOP 667/800/1067MHz@1.05V AZALIA ALC888S VC 33 PCIex1 6 PCIe ports Giga LAN BCM5764MKMLG 28 TXFM ACPI 2.0 PCIex1 PCIex1 Kedron a/b/g/n High Definition Audio PCIex1 LPC I/F OP AMP


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    PDF 4AV01 4AV01. TPS51125 RTM875N-606-VD EMC2102 TPS51124 667/800MHz 667/800/1067MHz RT9026 TPS51125 RTM875N-606-VD-GRT RTM875N-606-VD wistron MX25L16 1D05V 9LPRS365BKL ich9 JMB385 C3771

    HD b3c

    Abstract: reference design 88E8057 TP160A WPCE773LA0DG tps51125 W25X32V oz27C10 CX20561 C1602 a v1.3 Wistron Corporation
    Text: 5 4 3 2 1 SYSTEM DC/DC MI1 Block Diagram 43 TPS51125 Project code: 91.4I201.001 PCB P/N : 48.4I201.0SB REVISION : SB INPUTS OUTPUTS 5V_S5 7A 3D3V_S5(7A) DCBATOUT 5V_AUX_S5 3D3V_AUX_S5 D D Fan1 SMSC Mobile CPU CPU EMC2106 Penryn SYSTEM DC/DC 21 INPUTS VGA 21


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    PDF TPS51125 4I201 EMC2106 TPS51116 667/800/1066MHz ISL6244 RT8202 PCIex16 10KR2J-3-GP HD b3c reference design 88E8057 TP160A WPCE773LA0DG tps51125 W25X32V oz27C10 CX20561 C1602 a v1.3 Wistron Corporation

    SN0608098

    Abstract: schematic lcd inverter dell BQ70a EMC4002 LA-4041P B30 C350 mec5035 ECE5028 5 pin vga camera pinout suyin sn060809
    Text: A B C D E COMPAL CONFIDENTIAL 1 MODEL NAME : JAL20 PCB NO : LA-4041P DA800009Y1L BOM NO : 43153231L01(TPM) 43153231L02 (Non TPM) 1 M09 Maybach UMA uFCPGA Mobile Penryn Intel Cantiga GM + ICH9M 2 2 2008-06-16 REV : 1.0(A00) @ : Nopop Component 3@ : disable TPM


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    PDF JAL20 LA-4041P DA800009Y1L) 43153231L01 43153231L02 DA800009Y1L LA-4041P SD03415830L SD03415838L ADP3209 SN0608098 schematic lcd inverter dell BQ70a EMC4002 B30 C350 mec5035 ECE5028 5 pin vga camera pinout suyin sn060809

    dpc209

    Abstract: SN0608098 BCM5880 t144 nvg72m PR157 2N7002DW webcam circuit diagram ISL88731 compal
    Text: A B C D E COMPAL CONFIDENTIAL 1 MODEL NAME : JAL21 PCB NO : LA-4042P DAA00000T0L BOM P/N : 43153331L01 1 M09 Maybach DIS uFCPGA Mobile Penryn Intel Cantiga PM + ICH9M 2 2 2007-10-31 REV : 0.1 @ : Nopop Component 3 3 4 4 MB PCB Part Number DELL CONFIDENTIAL/PROPRIETARY


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    PDF JAL21 LA-4042P DAA00000T0L) 43153331L01 DAA00000R0L LA-4051P NVG98 dpc209 SN0608098 BCM5880 t144 nvg72m PR157 2N7002DW webcam circuit diagram ISL88731 compal

    KB3310

    Abstract: RTM875N-606-VD-GR KB3310QF RTM875N-606-VD-GRT KB3310QF-B0 WISTRON power sequence RTM875N-606 JMB385 TPS51125 schematic acer lcd backlight inverter
    Text: 5 4 3 2 Eiger Block Diagram 3D3V_S5 23 SYSTEM DC/DC TOP 667/800MHz 667/800/1067MHz@1.05V 15 AGTL+ CPU I/F HDMI DDR Memory I/F DDR2 DIMM2 18 INTEGRATED GRAHPICS 667/800MHz LVDS, CRT I/F PCIex16 13 6,7,8,9,10,11 X4 DMI 400MHz INT.MIC 35 Line In MXM CONN 30 C-Link0


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    PDF 4Z501 TPS51125 RTM875N-606-VD EMC2102 TPS51124 667/800MHz 667/800/1067MHz RT9026 KB3310 RTM875N-606-VD-GR KB3310QF RTM875N-606-VD-GRT KB3310QF-B0 WISTRON power sequence RTM875N-606 JMB385 TPS51125 schematic acer lcd backlight inverter

    IT8511TE

    Abstract: asus 6C720 AC_IN_OC 498C0 IT8511 R5538 ALC660 U5403 ICS9LPR363AGLFT
    Text: 5 01 D B A 61 02 System Setting 62 USB CONN * 63 * 04 04_CPU-Merom HOST 64 ISA ROM 05 05_CPU-Merom(PWR) 65 SPI ROM 06 * 66 LED 07 07_CRESTLINE(HOST) 67 * 08 08_CRESTLINE(DMI & CFG) 68 DC & BAT IN 09 09_CRESTLINE(GRAPHIC) 69 * 10 10_CRESTLINE(DDR2) 70 Debug CONN.


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    PDF M82-ME R9403 R5914 U5403 C5403 R5404 si4392 IT8511TE asus 6C720 AC_IN_OC 498C0 IT8511 R5538 ALC660 U5403 ICS9LPR363AGLFT