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    SI4463CDY Price and Stock

    Vishay Siliconix SI4463CDY-T1-GE3

    MOSFET P-CH 20V 13.6A/49A 8SO
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    DigiKey SI4463CDY-T1-GE3 Digi-Reel 6,880 1
    • 1 $1.45
    • 10 $0.917
    • 100 $1.45
    • 1000 $0.43444
    • 10000 $0.43444
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    SI4463CDY-T1-GE3 Cut Tape 6,880 1
    • 1 $1.45
    • 10 $0.917
    • 100 $1.45
    • 1000 $0.43444
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    SI4463CDY-T1-GE3 Reel 2,500 2,500
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    • 10000 $0.38838
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    RS SI4463CDY-T1-GE3 Bulk 2,500
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    Bristol Electronics SI4463CDY-T1-GE3 2
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    Vishay Intertechnologies SI4463CDY-T1-GE3

    P-CHANNEL 2.5-V (G-S) MOSFET - Tape and Reel (Alt: SI4463CDY-T1-GE3)
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    Avnet Americas SI4463CDY-T1-GE3 Reel 2,500
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    Mouser Electronics SI4463CDY-T1-GE3 131,709
    • 1 $1.12
    • 10 $0.756
    • 100 $0.527
    • 1000 $0.39
    • 10000 $0.337
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    Verical SI4463CDY-T1-GE3 5,000 2,500
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    Arrow Electronics SI4463CDY-T1-GE3 5,000 17 Weeks 2,500
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    Newark SI4463CDY-T1-GE3 Cut Tape 50 1
    • 1 $0.974
    • 10 $0.81
    • 100 $0.646
    • 1000 $0.646
    • 10000 $0.646
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    SI4463CDY-T1-GE3 Reel 2,500
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    TTI SI4463CDY-T1-GE3 Reel 15,000 2,500
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    TME SI4463CDY-T1-GE3 2,300 1
    • 1 $0.832
    • 10 $0.697
    • 100 $0.52
    • 1000 $0.45
    • 10000 $0.434
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    Avnet Asia SI4463CDY-T1-GE3 19 Weeks 2,500
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    EBV Elektronik SI4463CDY-T1-GE3 18 Weeks 2,500
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    Vishay Intertechnologies SI9433BDY-T1-E3

    MOSFETs 20V 6.2A 0.04Ohm
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    TTI SI9433BDY-T1-E3 Reel 2,500
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    Vishay Intertechnologies SI4463BDY-T1-E3

    MOSFETs 20V 13.7A 0.011Ohm
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    TTI SI4463BDY-T1-E3 Reel 2,500
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    • 10000 $0.727
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    Others SI4463CDY

    AVAILABLE EU
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    ComSIT USA SI4463CDY 5,000
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    SI4463CDY Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4463CDY-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHAN 2.5V SO8 Original PDF

    SI4463CDY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4463CDY www.vishay.com Vishay Siliconix P-Channel 2.5 V G-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF Si4463CDY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4463CDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    PDF Si4463CDY AN609, 2128m 3734m 2265m 9306u 5449m 3002m 7639m

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4463CDY Vishay Siliconix P-Channel 2.5 V G-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF Si4463CDY 18-Jul-08

    SI4463

    Abstract: SI4463CDY
    Text: New Product Si4463CDY Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.008 at VGS = - 10 V - 18.6 0.010 at VGS = - 4.5 V - 16.6 0.014 at VGS = - 2.5 V - 14 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21


    Original
    PDF Si4463CDY 2002/95/EC Si4463CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI4463

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4463CDY Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.008 at VGS = - 10 V - 18.6 0.010 at VGS = - 4.5 V - 16.6 0.014 at VGS = - 2.5 V - 14 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21


    Original
    PDF Si4463CDY 2002/95/EC Si4463CDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4463BDY-T1-GE3

    Abstract: No abstract text available
    Text: Specification Comparison Vishay Siliconix Si4463CDY vs. Si4463BDY Description: Package: Pin Out: P-Channel, 20 V D-S MOSFET SO-8 Identical Part Number Replacements: Si4463CDY-T1-GE3 replaces Si4463BDY-T1-GE3 Si4463CDY-T1-GE3 replaces Si4463BDY-T1-E3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original
    PDF Si4463CDY Si4463BDY Si4463CDY-T1-GE3 Si4463BDY-T1-GE3 Si4463BDY-T1-E3 23-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4463CDY Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.008 at VGS = - 10 V - 18.6 0.010 at VGS = - 4.5 V - 16.6 0.014 at VGS = - 2.5 V - 14 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21


    Original
    PDF Si4463CDY 2002/95/EC Si4463CDY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4463CDY Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.008 at VGS = - 10 V - 18.6 0.010 at VGS = - 4.5 V - 16.6 0.014 at VGS = - 2.5 V - 14 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21


    Original
    PDF Si4463CDY 2002/95/EC Si4463CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original
    PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836