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    SI4410DY Price and Stock

    Rochester Electronics LLC SI4410DY

    MOSFET N-CH 30V 10A 8SOIC
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    DigiKey SI4410DY Bulk 2,984 523
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    onsemi SI4410DY

    MOSFET N-CH 30V 10A 8SOIC
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    DigiKey SI4410DY Cut Tape 1
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    Infineon Technologies AG SI4410DY

    MOSFET N-CH 30V 10A 8SO
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    DigiKey SI4410DY Tube 95
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    Infineon Technologies AG SI4410DYPBF

    MOSFET N-CH 30V 10A 8SO
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    RS SI4410DYPBF Bulk 3,800
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    EBV Elektronik SI4410DYPBF 143 Weeks 3,800
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    NXP Semiconductors SI4410DY,518

    MOSFET N-CH 30V 8SO
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    DigiKey SI4410DY,518 Reel
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    Rochester Electronics SI4410DY,518 192 1
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    Vyrian SI4410DY,518 192
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    SI4410DY Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si4410DY Fairchild Semiconductor Single N-Channel Logic Level PowerTrench MOSFET Original PDF
    SI4410DY Fairchild Semiconductor Single N-Channel Logic Level PowerTrench MOSFET Original PDF
    SI4410DY International Rectifier HEXFET Power Mosfet Original PDF
    SI4410DY Kexin N-Channel Enhancement Mode MOSFET Original PDF
    SI4410DY NXP Semiconductors SI4410DY - N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 10 A; Qgd (typ): 7 nC; RDS(on): 13.5@10V20@4.5V mOhm; VDSmax: 30 V Original PDF
    SI4410DY Philips Semiconductors N-channel enhancement mode field-effect transistor Original PDF
    Si4410DY Philips Semiconductors N-Channel Enhancement Mode Field-Effect Transistor Original PDF
    Si4410DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI4410DY Vishay Telefunken N-channel 30-v (d-s) Mosfet Original PDF
    SI4410DY International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Rectifier Scan PDF
    SI4410DY,118 NXP Semiconductors SI4410DY - N-channel TrenchMOS logic level FET, SOT96-1 Package, Standard Marking, Reel Pack, SMD, 13" Original PDF
    SI4410DY,518 NXP Semiconductors N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 10 A; Qgd (typ): 7 nC; RDS(on): 13.5@10V20@4.5V mOhm; VDSmax: 30 V; Package: SOT96-1 (SO8); Container: Reel Dry Pack, SMD, 13" Original PDF
    SI4410DY_NL Fairchild Semiconductor Single N-Channel, Logic Level, PowerTrench MOSFET Original PDF
    SI4410DYPBF International Rectifier Original PDF
    SI4410DY-REVA Vishay Siliconix MOSFETs Original PDF
    SI4410DY-REVA General Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N-Channel, 30V, Single, Pkg Style SO-8 Scan PDF
    SI4410DY-REVA-E3 Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF
    Si4410DY SPICE Device Model Vishay N-Channel 30-V (D-S) MOSFET Original PDF
    SI4410DY-T1-A-E3 Vishay N-Channel 30-V (D-S) MOSFET Original PDF
    SI4410DY-T1-REVA Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF

    SI4410DY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: May 1997 FAIRCHILD S E M IC O N D U C T O R ADVANCE INFORMATION tm FDR4410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The FDR4410 has been designed as a smaller, low cost alternative to the popular Si4410DY. The SuperSOT -8 package is 40% smaller than the SO-8


    OCR Scan     		FDR4410 Si4410DY PDF

    Si4410DY

    Abstract: No abstract text available
    Text: Si4410DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V "10 0.020 @ VGS = 4.5 V "8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		Si4410DY S-47958--Rev. 15-Apr-96 PDF

    Si4410DY

    Abstract: No abstract text available
    Text: Si4410DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		Si4410DY PDF

    MS-012AA

    Abstract: Si4410DY
    Text: Si4410DY N-channel enhancement mode field-effect transistor Rev. 02 — 05 July 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si4410DY in SOT96-1 SO8 .


    Original     		Si4410DY M3D315 OT96-1 OT96-1, MS-012AA PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 91853A Si4410DY HEXFET Power MOSFET l l l l l N-Channel Mosfet Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 30V RDS on = 0.0135Ω T o p V ie w Description This N channel MOSFET is produced using International


    Original     		1853A Si4410DY 800mW PDF

    S-49536

    Abstract: S49536 Si4410DY 49536
    Text: Si4410DY N-Channel 30-V D-S MOSFET Product Summary VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V "10 0.020 @ VGS = 4.5 V "8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		Si4410DY S-49536--Rev. 18-Aug-97 S-49536 S49536 49536 PDF

    Si4410DY

    Abstract: No abstract text available
    Text: Si4410DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V "10 0.020 @ VGS = 4.5 V "8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si4410DY S-56945--Rev. 23-Nov-98 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4410DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V "10 0.020 @ VGS = 4.5 V "8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si4410DY 08-Apr-05 PDF

    SI4410DY

    Abstract: No abstract text available
    Text: SI4410DY N-channel TrenchMOS logic level FET Rev. 03 — 4 December 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		SI4410DY SI4410DY PDF

    Si4410DY

    Abstract: Si4410DY-REVA Si4410DY-REVA-E3 Si4410DY-T1-A-E3 Si4410DY-T1-REVA
    Text: Si4410DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4410DY-REVA


    Original     		Si4410DY Si4410DY-REVA Si4410DY-T1-REVA Si4410DY-REVA-E3 Si4410DY-T1-A-E3 S-40838--Rev. 03-May-04 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET SMD Type N-Channel Enhancement Mode MOSFET SI4410DY SOP-8 • Features ● RDS ON ≤0.0135Ω @VGS=10V D D D D S S S G ● RDS(ON)≤0.02Ω @VGS=4.5V ● Low gate charge. ● Fast switching speed. D S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S ■ Absolute Maximum Ratings Ta = 25℃


    Original     		SI4410DY PDF

    4410 SO-8

    Abstract: FDR4410 Si4410DY SOIC-16
    Text: April 1998 FDR4410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The FDR4410 has been designed as a smaller, low cost alternative to the popular Si4410DY. 9.3 A, 30 V. RDS ON = 0.013 Ω @ VGS = 10 V RDS(ON) = 0.020 Ω @ VGS = 4.5 V.


    Original     		FDR4410 FDR4410 Si4410DY OT-23 SOIC-16 OT-223 4410 SO-8 SOIC-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4410DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		Si4410DY PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4410DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		Si4410DY PDF

    Si4410DY

    Abstract: No abstract text available
    Text: Si4410DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		Si4410DY PDF

    Si4410DY

    Abstract: 100VDS
    Text: Si4410DY Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(ON) (W) ID (A) 0.0135 @ VGS = 10 V "10 0.020 @ VGS = 4.5 V "8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si4410DY S-56945--Rev. 23-Nov-98 100VDS PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4410DY N-channel enhancement mode field-effect transistor Rev. 01 — 20 Feb 2001 M3D315 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si4410DY in SOT96-1 SO8 .


    Original     		Si4410DY M3D315 OT96-1 OT96-1, MBK187 PDF

    EIA-541

    Abstract: Si4410DYPbF
    Text: PD - 95168 Si4410DYPbF l l l l l l HEXFET Power MOSFET N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive Lead-Free 1 8 S 2 7 S 3 6 4 5 S G Description This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced


    Original     		Si4410DYPbF 800mW EIA-481 EIA-541. EIA-541 PDF

    THCR70E1H226ZT

    Abstract: LTC1625 LTC1775 LTC1775C LTC1775CGN LTC1775CS LTC1775I LTC1775IGN MBRS340 SUD50N03-10
    Text: LTC1775 High Power No RSENSE Current Mode Synchronous Step-Down Switching Regulator TM U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1775 is a synchronous step-down switching regulator controller that drives external N-channel power


    Original     		LTC1775 LTC1625, LTC1775 150kHz LTC1702 500kHz; LTC1735 16-Pin 1775f THCR70E1H226ZT LTC1625 LTC1775C LTC1775CGN LTC1775CS LTC1775I LTC1775IGN MBRS340 SUD50N03-10 PDF

    PN3904

    Abstract: in4148 smd diode CS5158 CS5158GD16 CS5158GDR16 IRL3103 MMUN2111T1 marking code SS SOT23 DRIVER MOSFET marking code SS SOT23 MOSFET DRIVER
    Text: CS5158 CPU 5-Bit Synchronous Buck Controller The CS5158 is a 5–bit synchronous dual N–Channel buck controller. It is designed to provide unprecedented transient response for today’s demanding high–density, high–speed logic. The regulator operates using a proprietary control method, which allows a 100 ns


    Original     		CS5158 CS5158 r14525 CS5158/D PN3904 in4148 smd diode CS5158GD16 CS5158GDR16 IRL3103 MMUN2111T1 marking code SS SOT23 DRIVER MOSFET marking code SS SOT23 MOSFET DRIVER PDF

    2N3906

    Abstract: CS5165H CS5165HGDW16 CS5165HGDWR16 IRL3103 SMD 2N3906 mosfet k 2698
    Text: CS5165H 5-Bit Synchronous CPU Buck Controller The CS5165H synchronous 5–bit NFET buck controller is optimized to manage the power of the next generation Pentium II processors. It’s V2 control architecture delivers the fastest transient response 100 ns ,


    Original     		CS5165H CS5165H r14525 CS5165H/D 2N3906 CS5165HGDW16 CS5165HGDWR16 IRL3103 SMD 2N3906 mosfet k 2698 PDF

    NAS 1790

    Abstract: fs r6a CIRCUIT DIAGRAM TPS5103 TPS5103EVM-136 TPS5103IDB TPS5103IDBR SSOP20
    Text: TPS5103 MULTIPLE MODE SYNCHRONOUS DC/DC CONTROLLER SLVS240A – SEPTEMBER 1999 – REVISED MAY 2001 D D D D D D D D D D Step-Down DC-DC Converter Three Operation-Modes – Heavy Load: – Fixed Frequency PWM – Hysteretic User Selectable – Light Load:


    Original     		TPS5103 SLVS240A NAS 1790 fs r6a CIRCUIT DIAGRAM TPS5103 TPS5103EVM-136 TPS5103IDB TPS5103IDBR SSOP20 PDF

    3103S

    Abstract: 1994-V0 50 AMP MOSEFET D 1388 3596 3M UC 3525 IC 2N3906 CS5166 IN4148 IRL3103S
    Text: CS-5166 5 Bit Synchronous CPU Controller with Power Good and Current Limit Features Description The CS-5166 is a synchronous dual NFET Buck Regulator Controller. It is designed to power the core logic of the latest high performance CPUs. It uses the V2 control method to achieve the


    Original     		CS-5166 CS-5166 CS-5166DW16 CS-5166DWR16 3103S 1994-V0 50 AMP MOSEFET D 1388 3596 3M UC 3525 IC 2N3906 CS5166 IN4148 IRL3103S PDF

    nn 5198 k

    Abstract: SLUA3
    Text: TPS2343 ą SLUS644B − FEBRUARY 2005 − MAY 2005 DUAL SLOT PCIĆX 2.0 HOTĆPLUG POWER CONTROLLER FEATURES D Supports PCI, PCI−X 1.0 and PCI−X 2.0 Slots D Internal Power Switches for −12 V, 12 V, 3.3 V D D D D D D D D D DESCRIPTION Aux Control for Power FETs for 5 V, 3.3 V, and


    Original     		TPS2343 SLUS644B 80-Lead TPS2343 -12-V nn 5198 k SLUA3 PDF