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    100VDS Price and Stock

    Power-Sonic Corporation PS-6100VDSF1FR

    Sealed Lead Acid Battery PS-6100F1VdS 6V 12AH FR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PS-6100VDSF1FR
    • 1 $36.66
    • 10 $33.75
    • 100 $28.22
    • 1000 $27.01
    • 10000 $27.01
    		Get Quote

    Power-Sonic Corporation PS-6100VDSF1

    Sealed Lead Acid Battery PS-6100F1VdS 6V 12AH std
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PS-6100VDSF1
    • 1 $34.92
    • 10 $32.14
    • 100 $26.87
    • 1000 $25.73
    • 10000 $25.73
    		Get Quote

    Vishay Intertechnologies SIR870DP-T1-GE3

    MOSFETs N-CHANNEL 100-V(D-S)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI SIR870DP-T1-GE3 Reel 30,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.01
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    Vishay Intertechnologies SIDR668ADP-T1-RE3

    MOSFETs N-CHANNEL 100-V(D-S) PowerPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI SIDR668ADP-T1-RE3 Reel 12,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1
    		Buy Now

    Vishay Intertechnologies SIZ270DT-T1-GE3

    MOSFETs Dual N-Ch 100V(D-S)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI SIZ270DT-T1-GE3 Reel 6,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.504
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    100VDS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    jfet j102

    Abstract: SLUA372 tda 0470 bq78PL118EVM SLUA524 SLUU481 smd zener diode code z4 USB-TO-GPIO cell balance board users guide Advanced Gas Gauge Host Firmware Guide
    Text: User's Guide SLUU474 – January 2011 bq78PL116EVM Evaluation Module The bq78PL116EVM Evaluation Module can assist users in evaluating the bq78PL116 PowerLAN Master Gateway Controller. Included in this document are discussions of the board and its operation, the


    Original     		PDF SLUU474 bq78PL116EVM bq78PL116 jfet j102 SLUA372 tda 0470 bq78PL118EVM SLUA524 SLUU481 smd zener diode code z4 USB-TO-GPIO cell balance board users guide Advanced Gas Gauge Host Firmware Guide

    dale r15f

    Abstract: transistor BC 536 24V DC to 5V 1A DC flyback converter C1608X7R1H104KT TDK zener diode 9.1v C2012X7R2A104KT GRM31CR72A105K S0D-80 MELF GLASS Schottky Blue TRANSISTOR BC 448
    Text: MIC2196 Power Over Ethernet IEEE 802.3af PD Evaluation Board Non-Isolated General Description The MIC2196 Power Over Ethernet (POE) Powered Device (PD) Evaluation Board is designed to offer a complete IEEE802.3af compliant power solution. The evaluation board includes a low cost POE


    Original     		PDF MIC2196 IEEE802 400KHz M9999-052402 dale r15f transistor BC 536 24V DC to 5V 1A DC flyback converter C1608X7R1H104KT TDK zener diode 9.1v C2012X7R2A104KT GRM31CR72A105K S0D-80 MELF GLASS Schottky Blue TRANSISTOR BC 448

    zener diode 9.1v

    Abstract: DC DC isolated flyback eval board C2012X7R2A104K TDK flyback transformer R250-F Murata GRM32ER72A105KA01L 24V DC to 5V 1A DC flyback converter MIC9130 C1608X7R1H104KT CRCW080510R0FRT1
    Text: MIC9130 Power Over Ethernet IEEE 802.3af PD Evaluation Board Isolated General Description The MIC9130 Power Over Ethernet (POE) Powered Device (PD) Evaluation Board is designed to offer a complete IEEE802.3af compliant power solution. The evaluation board includes a low cost POE


    Original     		PDF MIC9130 IEEE802 M9999-052402 zener diode 9.1v DC DC isolated flyback eval board C2012X7R2A104K TDK flyback transformer R250-F Murata GRM32ER72A105KA01L 24V DC to 5V 1A DC flyback converter C1608X7R1H104KT CRCW080510R0FRT1

    33n10

    Abstract: DD 127 D
    Text: £ j ï SGS-THOMSON ULKgraMOeS STP33N10 STP33N10FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP33N 10 S T P 3 3 N 1 0FI . . . . . . . . V dss RDS on Id 100 V 100 V < 0 .0 6 Q. < 0 .0 6 Q. 33 A 18 A TYPICAL R DS(on) = 0.045 Q. AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF STP33N10 STP33N10FI TP33N 33n10 DD 127 D

    STP10N10

    Abstract: 0A95 73H2
    Text: SGS-THOMSON ¿5 7 S T P IO N IO L S T P 10N 1OLFI ÍUI OT ül@Í N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP10N10L STP10N10LFI • . . . . . . . . Voss R D S (o n Id 100 V 100 V < 0.33 Q < 0.33 Q 10 A 7A TYPICAL RDS(on) = 0.26 Q


    OCR Scan     		PDF STP10N10L STP10N10LFI 7T2T237 STP10N1 ISOWATT220 7RS153? STP10N10 0A95 73H2

    STK9N10

    Abstract: No abstract text available
    Text: £ j ï SGS-THOMSON ULKgraMOeS S T K 9 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S T K 9N 10 V dss RDS on Id 100 V < 0 .3 Q 9 A TYPICAL R D S (on) = 0.23 £2 . AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF

    GCS9030

    Abstract: STD8N10L 066AA 100VDS
    Text: rz Z ^ 7/ S C S -T H O M S O N IKJDra IILIOT©raDSl STD8 N10L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V dss STD8N10L 100 V RDS on < 0.33 Id n % 8A • . . . . . . . TYPICAL R[)S(on) = 0.25 Q AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    OCR Scan     		PDF STD8N10L STD8N10L O-251) O-252) 0068771-E 07ab3^ O-252 0068772-B 0072b3S GCS9030 066AA 100VDS

    tcm600

    Abstract: STD8N10L tcm600-400 DIODE OA-200
    Text: f Z ^ 7 7 S C S - T H O M S O N / r a n e ^ iiL iC T i iD B i S T D 8 N 1 0 L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STD8N10L V dss R D S (o n Id 100 V < 0.33 n 8A • . . . . . . . TYPICAL R[)S(on) = 0.25 Q AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF STD8N10L STD8N10L O-251) O-252) 0068771-E 072b3 O-252 7ci2c1237 0072fc tcm600 tcm600-400 DIODE OA-200

    Untitled

    Abstract: No abstract text available
    Text: T T ET SS ? 0 0 M b 3S 7 23b « S G T H STP18N1 o STP18N1OFI SGS-THOMSON ¡[LJOT «§ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR . • ■ . . ■ ■ ■ 100 V 100 V R d S oii D D V dss STP18N 10 STP18N 10FI A A O O TYPE Ip 18 A 11 A TYPICAL Ros(on) = 0.095 LI


    OCR Scan     		PDF STP18N1 STP18N1O STP18N 100VDS STP18N10/FI

    Untitled

    Abstract: No abstract text available
    Text: SGSTHOMSON STD 9N 1o ULieraOôKêi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD9N10 V dss RDS on Id 100 V < 0.27 a 9A • . . . . . . ■ TYPICAL FtDS(on) = 0.23 Q AVALANCHE RUGGED TECHNOLOGY 100% AVALANCH E TESTE D REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF STD9N10 O-251) O-252) O-251 O-252 0068772-B

    100VDS

    Abstract: No abstract text available
    Text: * 5 S G S -T H O M S O N ilLHCTIKMDe 7 2o n io l STP20N1OLFI s t p N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP20N10L STP20N10LFI V dss R DS on Id 100 V 100 V < 0.12 a < 0.12 a 20 A 12 A • TYPICAL RDS(on) = 0.09 Q . . ■ ■


    OCR Scan     		PDF STP20N1OLFI STP20N10L STP20N10LFI 100VDS

    STP40N10

    Abstract: 100VDS
    Text: £jï 40 10 40 10 SGS-THOMSON ULKgraMOeS STP N STP N FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP40N 10 S T P 4 0 N 1 0FI V dss RDS on Id 100 V 100 V < 0 .0 4 Q. < 0 .0 4 Q. 40 A 22 A • TYPICAL R D S (on) = 0.035 £2 . AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF TP40N 40Nublication STP40N10 100VDS