SI4160DY Search Results
SI4160DY Price and Stock
Vishay Siliconix SI4160DY-T1-GE3MOSFET N-CH 30V 25.4A 8SO |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
SI4160DY-T1-GE3 | Cut Tape | 2,333 | 1 |
|
Buy Now | |||||
Vishay Intertechnologies SI4160DY-T1-GE3N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI4160DY-T1-GE3) |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
SI4160DY-T1-GE3 | Reel | 2,500 | 15 Weeks | 2,500 |
|
Buy Now | ||||
![]() |
SI4160DY-T1-GE3 | 23,847 |
|
Buy Now | |||||||
![]() |
SI4160DY-T1-GE3 | Cut Strips | 9 | 15 Weeks | 1 |
|
Buy Now | ||||
![]() |
SI4160DY-T1-GE3 | Cut Tape | 2,500 |
|
Buy Now | ||||||
![]() |
SI4160DY-T1-GE3 | 3,916 |
|
Get Quote | |||||||
![]() |
SI4160DY-T1-GE3 | 3,132 |
|
Buy Now | |||||||
![]() |
SI4160DY-T1-GE3 | Reel | 2,500 |
|
Buy Now | ||||||
![]() |
SI4160DY-T1-GE3 | 19 Weeks | 2,500 |
|
Get Quote | ||||||
![]() |
SI4160DY-T1-GE3 | 16 Weeks | 2,500 |
|
Buy Now | ||||||
Vishay Intertechnologies SI4160DY-T1-GE3.Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:25.4A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Power Dissipation:5.7W; No. Of Pins:8Pins Rohs Compliant: Yes |Vishay SI4160DY-T1-GE3. |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
SI4160DY-T1-GE3. | Reel | 2,500 | 2,500 |
|
Buy Now | |||||
Others SI4160DYT1GE3AVAILABLE EU |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
SI4160DYT1GE3 | 288 |
|
Get Quote | |||||||
Vishay Intertechnologies SI4160DYT1GE3AVAILABLE EU |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
SI4160DYT1GE3 | 213 |
|
Get Quote |
SI4160DY Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
---|---|---|---|---|---|---|
SI4160DY-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 25.4A 8-SOIC | Original |
SI4160DY Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
4562 mosfet
Abstract: M 3211 4562 AN609 13544
|
Original |
Si4160DY AN609, 02-Dec-08 4562 mosfet M 3211 4562 AN609 13544 | |
Contextual Info: SPICE Device Model Si4160DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
Si4160DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product Si4160DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0049 at VGS = 10 V 25.4 0.0063 at VGS = 4.5 V 22.4 • • • • Qg (Typ.) 16.9 nC Halogen-free According to IEC 61249-2-21 TrenchFET Power MOSFET |
Original |
Si4160DY Si4160DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Si4160DY-T1-GE3
Abstract: si4160 69069
|
Original |
Si4160DY Si4160DY-T1-GE3 11-Mar-11 si4160 69069 | |
Si4160DY-T1-GE3
Abstract: RG406
|
Original |
Si4160DY Si4160DY-T1-GE3 18-Jul-08 RG406 | |
Contextual Info: New Product Si4160DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0049 at VGS = 10 V 25.4 0.0063 at VGS = 4.5 V 22.4 • • • • Qg (Typ.) 16.9 nC Halogen-free According to IEC 61249-2-21 TrenchFET Power MOSFET |
Original |
Si4160DY Si4160DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: New Product Si4160DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0049 at VGS = 10 V 25.4 0.0063 at VGS = 4.5 V 22.4 • • • • Qg (Typ.) 16.9 nC Halogen-free According to IEC 61249-2-21 TrenchFET Power MOSFET |
Original |
Si4160DY Si4160DY-T1-GE3 11-Mar-11 | |
Contextual Info: SPICE Device Model Si4160DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range |
Original |
Si4160DY 18-Jul-08 | |
Contextual Info: New Product Si4160DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0049 at VGS = 10 V 25.4 0.0063 at VGS = 4.5 V 22.4 • • • • Qg (Typ.) 16.9 nC Halogen-free According to IEC 61249-2-21 TrenchFET Power MOSFET |
Original |
Si4160DY Si4160DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
|
Original |
GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
|
Original |
Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 | |
Contextual Info: xDSL ModemRouter Table of Contents DC/DC BUCK CONVERTER, DC/DC BUCK CONVERTER, Energy |
Original |
1N4148WS-V 500mA BAT54A-V 200mA; OT-23 BAT54W-V OD123 BAV99-V OD-323 | |
Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
|
Original |
Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 |