Si3983DV
Abstract: Si3983DV-T1
Text: Si3983DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.110 @ VGS = −4.5 V −2.5 0.145 @ VGS = −2.5 V −2.0 0.220 @ VGS = −1.8 V −1.0 D TrenchFETr Power MOSFET D Symetrical Dual P-Channel
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Si3983DV
Si3983DV-T1--E3
S-40575--Rev.
29-Mar-04
Si3983DV-T1
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40575
Abstract: Si3983DV Si3983DV-T1
Text: Si3983DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.110 @ VGS = −4.5 V −2.5 0.145 @ VGS = −2.5 V −2.0 0.220 @ VGS = −1.8 V −1.0 D TrenchFETr Power MOSFET D Symetrical Dual P-Channel
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Si3983DV
Si3983DV-T1--E3
08-Apr-05
40575
Si3983DV-T1
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Si3983DV
Abstract: 72426
Text: SPICE Device Model Si3983DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3983DV
netw68
12-Aug-03
72426
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Si3983DV
Abstract: Si3983DV-T1-E3 Si3983DV-T1-GE3
Text: Si3983DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 2.5 - 20 0.145 at VGS = - 2.5 V - 2.0 0.220 at VGS = - 1.8 V - 1.0 • Halogen free According to IEC 61249-2-21 Definition
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Si3983DV
2002/95/EC
Si3983DV-T1-E3
Si3983DV-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si3983DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 2.5 - 20 0.145 at VGS = - 2.5 V - 2.0 0.220 at VGS = - 1.8 V - 1.0 • Halogen free According to IEC 61249-2-21 Definition
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Si3983DV
2002/95/EC
Si3983DV-T1-E3
Si3983DV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si3983DV Vishay Siliconix New Product Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.110 @ VGS = −4.5 V −2.5 0.145 @ VGS = −2.5 V −2.0 0.220 @ VGS = −1.8 V −1.0 D TrenchFETr Power MOSFET D Symetrical Dual P-Channel
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Si3983DV
Si3983DV-T1--E3
S-32412--Rev.
24-Nov-03
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Untitled
Abstract: No abstract text available
Text: Si3983DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 2.5 - 20 0.145 at VGS = - 2.5 V - 2.0 0.220 at VGS = - 1.8 V - 1.0 • Halogen free According to IEC 61249-2-21 Definition
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Si3983DV
2002/95/EC
Si3983DV-T1-E3
Si3983DV-T1-GE3
11-Mar-11
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Si3983DV
Abstract: No abstract text available
Text: SPICE Device Model Si3983DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3983DV
18-Jul-08
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Si3983DV
Abstract: Si3983DV-T1
Text: Si3983DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.110 @ VGS = −4.5 V −2.5 0.145 @ VGS = −2.5 V −2.0 0.220 @ VGS = −1.8 V −1.0 D TrenchFETr Power MOSFET D Symetrical Dual P-Channel
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Si3983DV
Si3983DV-T1--E3
18-Jul-08
Si3983DV-T1
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Untitled
Abstract: No abstract text available
Text: Si3983DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 rDS(on) (W) ID (A) 0.110 @ VGS = -4.5 V -2.5 0.145 @ VGS = -2.5 V -2.0 0.220 @ VGS = -1.8 V -1.0 D TrenchFETr Power MOSFETS D Symetrical Dual P-Channel
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Si3983DV
Si3983DV-T1
S-31404--Rev.
14-Jul-03
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Si3983DV
Abstract: Si3983DV-T1-E3 Si3983DV-T1-GE3
Text: Si3983DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 2.5 - 20 0.145 at VGS = - 2.5 V - 2.0 0.220 at VGS = - 1.8 V - 1.0 • Halogen free According to IEC 61249-2-21 Definition
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Si3983DV
2002/95/EC
Si3983DV-T1-E3
Si3983DV-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si3983DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 2.5 - 20 0.145 at VGS = - 2.5 V - 2.0 0.220 at VGS = - 1.8 V - 1.0 • Halogen free According to IEC 61249-2-21 Definition
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Si3983DV
2002/95/EC
Si3983DV-T1-E3
Si3983DV-T1-Gelectronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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AN609
Abstract: Si3983DV
Text: Si3983DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si3983DV
AN609
14-Mar-07
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BS250KL-TR1-E3
Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8
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SI3865BDV-T1-E3CT-ND
SI4720CY-T1-E3CT-ND
SI6924AEDQ-T1-E3CT-ND
SI1040X-T1-E3TR-ND
SI1865DL-T1-E3TR-ND
SI1869DH-T1-E3TR-ND
SI3861BDV-T1-E3TR-ND
SI3865BDV-T1-E3TR-ND
SI4720CY-T1-E3TR-ND
SI6924AEDQ-T1-E3TR-ND
BS250KL-TR1-E3
si6435adq-t1-e3
TP0610KL
Si9435BDY-T1-e3ct
SI6467BDQ-T1-E3
SI1024X-T1-E3
SI5855DC-T1-E3
SIA411DJ-T1-E3
SUM110P06-07L-E3 D2PAK
SI1903DL-T1-E3
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BS250KL
Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
Text: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no
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SC-75
SC-75A
SC-89
BS250KL
tsop6 marking 345
SUD50P08
SI3437
SUD19P06-60L
MOSFET SUB75P03
tsop6 marking 443
Si5947DU
Si1471DH
SI1073X
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Untitled
Abstract: No abstract text available
Text: 19-0810; Rev 0; 4/07 Overvoltage Protectors with External pFET Features The MAX4923–MAX4926 overvoltage protection OVP controllers protect low-voltage systems against high-voltage faults of up to +28V with an appropriate external pFET. When the input voltage exceeds the overvoltage lockout (OVLO) threshold, or falls below the
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MAX4923â
MAX4926
MAX4923)
MAX4924)
MAX4925)
MAX4926)
MAX4926
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GS 069
Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no
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Si9165
Si9169
600-mA
TSSOP-20
MSOP-10
SiP1759
GS 069
Si5902DC SPICE Device Model
tsop6 marking 312
sC89-6
Si7705DN
SI7100DN
Si3865BDV
Si5947DU
Si3861BDV
1212-8
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220v AC voltage stabilizer schematic diagram
Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585
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AD9272
P462-ND
LNG295LFCP2U
P463-ND
LNG395MFTP5U
220v AC voltage stabilizer schematic diagram
LG color tv Circuit Diagram tda 9370
1000w inverter PURE SINE WAVE schematic diagram
schematic diagram atx Power supply 500w
TV SHARP IC TDA 9381 PS
circuit diagram wireless spy camera
9744 mini mainboard v1.2
sony 279-87
transistor E 13005-2
superpro lx
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446V
Abstract: MAX4923 L611 to control
Text: 19-0810; Rev 0; 4/07 Overvoltage Protectors with External pFET Features The MAX4923–MAX4926 overvoltage protection OVP controllers protect low-voltage systems against high-voltage faults of up to +28V with an appropriate external pFET. When the input voltage exceeds the overvoltage lockout (OVLO) threshold, or falls below the
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MAX4923
MAX4926
MAX4923)
MAX4924)
MAX4925)
MAX4926)
MAX4926
446V
L611 to control
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