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    SI2300DS Price and Stock

    Vishay Siliconix SI2300DS-T1-BE3

    N-CHANNEL 30-V (D-S) MOSFET
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    DigiKey SI2300DS-T1-BE3 Digi-Reel 7,202 1
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    SI2300DS-T1-BE3 Cut Tape 7,202 1
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    SI2300DS-T1-BE3 Reel 6,000 3,000
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    MOSLEADER SI2300DS-T1-GE3-ML

    N 30V 3.6A SOT-23
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    Vishay Intertechnologies SI2300DS-T1-BE3

    N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI2300DS-T1-BE3)
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    Avnet Americas SI2300DS-T1-BE3 Reel 9,000 22 Weeks 3,000
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    Mouser Electronics SI2300DS-T1-BE3 153,660
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    Verical SI2300DS-T1-BE3 9,000 3,000
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    Arrow Electronics SI2300DS-T1-BE3 9,000 20 Weeks 3,000
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    Newark SI2300DS-T1-BE3 Bulk 3,000
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    Vyrian SI2300DS-T1-BE3 36,868
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    Vishay Intertechnologies SI2300DS-T1-GE3

    N-CHANNEL 30-V (D-S) MOSFET - Product that comes on tape, but is not reeled (Alt: 69W7184)
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    Avnet Americas SI2300DS-T1-GE3 Ammo Pack 17 Weeks, 4 Days 1
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    SI2300DS-T1-GE3 Reel 10 Weeks 3,000
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    Mouser Electronics SI2300DS-T1-GE3 100,465
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    Verical SI2300DS-T1-GE3 18,000 3,000
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    SI2300DS-T1-GE3 9,000 3,000
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    SI2300DS-T1-GE3 49 49
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    Arrow Electronics SI2300DS-T1-GE3 18,000 20 Weeks 3,000
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    SI2300DS-T1-GE3 9,000 20 Weeks 3,000
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    SI2300DS-T1-GE3 Cut Strips 49 20 Weeks 1
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    Newark SI2300DS-T1-GE3 Cut Tape 3,532 1
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    SI2300DS-T1-GE3 Reel 1
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    Quest Components SI2300DS-T1-GE3 2,233
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    SI2300DS-T1-GE3 158
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    TTI SI2300DS-T1-GE3 Reel 12,000 3,000
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    TME SI2300DS-T1-GE3 1
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    Avnet Asia SI2300DS-T1-GE3 3,000 12 Weeks 3,000
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    EBV Elektronik SI2300DS-T1-GE3 21 Weeks 3,000
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    New Advantage Corporation SI2300DS-T1-GE3 375,000 1
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    Vyrian SI2300DS-T1-GE3 20,461
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    Vishay Siliconix SI2300DS-T1-GE3

    MOSFET N-CH 30V 3.6A SOT-23 | Siliconix / Vishay SI2300DS-T1-GE3
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    RS SI2300DS-T1-GE3 Bulk 3,000
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    Find more SI2300DS price and stock on Findchips.com

    SI2300DS Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI2300DS-T1-BE3 Vishay Siliconix N-CHANNEL 30-V (D-S) MOSFET Original PDF
    SI2300DS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 3.6A SOT-23 Original PDF

    SI2300DS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Si2300DS

    Abstract: No abstract text available
    Text: New Product Si2300DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.068 at VGS = 4.5 V 3.6a 0.085 at VGS = 2.5 V 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si2300DS 2002/95/EC O-236 OT-23) Si2300DS-T1-GE3 18-Jul-08 PDF

    Si2300DS

    Abstract: SI2300 Si2300DS-T1-GE3 P2 MARKING CODE s100111rev
    Text: New Product Si2300DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.068 at VGS = 4.5 V 3.6a 0.085 at VGS = 2.5 V 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si2300DS 2002/95/EC O-236 OT-23) Si2300DS-T1-GE3 18-Jul-08 SI2300 P2 MARKING CODE s100111rev PDF

    si2300

    Abstract: Si2300DS S10-0258
    Text: SPICE Device Model Si2300DS Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si2300DS 18-Jul-08 si2300 S10-0258 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2300DS www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		Si2300DS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    si2300

    Abstract: Si2300DS A 0412 MOSFET AN609
    Text: Si2300DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		Si2300DS AN609, 15-Jan-10 si2300 A 0412 MOSFET AN609 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si2300DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.068 at VGS = 4.5 V 3.6a 0.085 at VGS = 2.5 V 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si2300DS 2002/95/EC O-236 OT-23) Si2300DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF