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    SI1427 Search Results

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    SI1427 Price and Stock

    Vishay Siliconix SI1427EDH-T1-GE3

    MOSFET P-CH 20V 2A SC70-6
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    DigiKey SI1427EDH-T1-GE3 Cut Tape 5,726 1
    • 1 $0.55
    • 10 $0.341
    • 100 $0.55
    • 1000 $0.14611
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    SI1427EDH-T1-GE3 Digi-Reel 5,726 1
    • 1 $0.55
    • 10 $0.341
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    • 1000 $0.14611
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    SI1427EDH-T1-GE3 Reel 3,000 3,000
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    Vishay Siliconix SI1427EDH-T1-BE3

    MOSFET P-CH 20V 2A/2A SC70-6
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    DigiKey SI1427EDH-T1-BE3 Digi-Reel 2,769 1
    • 1 $0.55
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    SI1427EDH-T1-BE3 Cut Tape 2,769 1
    • 1 $0.55
    • 10 $0.341
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    SI1427EDH-T1-BE3 Reel 3,000
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    Vishay Intertechnologies SI1427EDH-T1-GE3

    P-CHANNEL 20-V (D-S) MOSFET - Product that comes on tape, but is not reeled (Alt: 70AC6488)
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    Avnet Americas SI1427EDH-T1-GE3 Ammo Pack 17 Weeks, 3 Days 1
    • 1 $0.41
    • 10 $0.29
    • 100 $0.177
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    SI1427EDH-T1-GE3 Reel 18 Weeks 3,000
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    Mouser Electronics SI1427EDH-T1-GE3 52,665
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    • 1000 $0.129
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    Verical SI1427EDH-T1-GE3 3,000 603
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    Newark SI1427EDH-T1-GE3 Cut Tape 3,000 1
    • 1 $0.083
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    SI1427EDH-T1-GE3 Reel 1
    • 1 $0.147
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    • 100 $0.147
    • 1000 $0.147
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    TTI SI1427EDH-T1-GE3 Reel 3,000
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    TME SI1427EDH-T1-GE3 1
    • 1 $0.379
    • 10 $0.295
    • 100 $0.19
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    • 10000 $0.106
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    EBV Elektronik SI1427EDH-T1-GE3 22 Weeks 3,000
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    Vishay Intertechnologies SI1427EDH-T1-BE3

    MOSFETs SOT363 P CHAN 20V
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    Mouser Electronics SI1427EDH-T1-BE3 102,011
    • 1 $0.36
    • 10 $0.247
    • 100 $0.159
    • 1000 $0.129
    • 10000 $0.096
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    Newark SI1427EDH-T1-BE3 Reel 3,000
    • 1 $0.147
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    • 10000 $0.122
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    TTI SI1427EDH-T1-BE3 Reel 3,000
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    Vishay Huntington SI1427EDH-T1-GE3

    MOSFET P-CH 20V 2A SOT-363
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    Win Source Electronics SI1427EDH-T1-GE3 18,000
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    SI1427 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI1427EDH-T1-BE3 Vishay Siliconix MOSFET P-CH 20V 2A/2A SC70-6 Original PDF
    SI1427EDH-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 2A SOT-363 Original PDF

    SI1427 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    si1427

    Abstract: No abstract text available
    Text: Si1427EDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    PDF Si1427EDH AN609, 3515u 1736m 9349m 1636u 2141m 9215u 1951m si1427

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si1427EDH www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF Si1427EDH 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si1427

    Abstract: No abstract text available
    Text: New Product Si1427EDH Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.064 at VGS = - 4.5 V - 2.0e 0.085 at VGS = - 2.5 V - 2.0e 0.110 at VGS = - 1.8 V - 2.0e 0.165 at VGS = - 1.5 V - 0.5 VDS (V) - 20 Qg (Typ.) 7.6 nC


    Original
    PDF Si1427EDH 2002/95/EC OT-363 SC-70 11-Mar-11 si1427

    SI1427EDH

    Abstract: No abstract text available
    Text: New Product Si1427EDH Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.064 at VGS = - 4.5 V - 2.0e 0.085 at VGS = - 2.5 V - 2.0e 0.110 at VGS = - 1.8 V - 2.0e 0.165 at VGS = - 1.5 V - 0.5 VDS (V) - 20 Qg (Typ.) 7.6 nC


    Original
    PDF Si1427EDH 2002/95/EC OT-363 SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1427EDH Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.064 at VGS = - 4.5 V - 2.0e 0.085 at VGS = - 2.5 V - 2.0e 0.110 at VGS = - 1.8 V - 2.0e 0.165 at VGS = - 1.5 V - 0.5 VDS (V) - 20 Qg (Typ.) 7.6 nC


    Original
    PDF Si1427EDH 2002/95/EC OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1427EDH Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.064 at VGS = - 4.5 V - 2.0e 0.085 at VGS = - 2.5 V - 2.0e 0.110 at VGS = - 1.8 V - 2.0e 0.165 at VGS = - 1.5 V - 0.5 VDS (V) - 20 Qg (Typ.)


    Original
    PDF Si1427EDH 2002/95/EC OT-363 SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original
    PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836