SI1422DH Search Results
SI1422DH Price and Stock
Vishay Siliconix SI1422DH-T1-GE3MOSFET N-CH 12V 4A SC70-6 |
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SI1422DH-T1-GE3 | Reel |
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Vishay Intertechnologies SI1422DHT1GE3N-CHANNEL 12 V (D-S) MOSFET Small Signal Field-Effect Transistor, 4A I(D), 12V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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SI1422DHT1GE3 | 3,000 |
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Vishay Intertechnologies SI1422DH-T1-GE3(Alt: SI1422DH-T1-GE3) |
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SI1422DH-T1-GE3 | 143 Weeks | 3,000 |
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SI1422DH Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SI1422DH-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 12V 4A SC70-6 | Original |
SI1422DH Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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sc 1287Contextual Info: New Product Si1422DH Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.026 at VGS = 4.5 V 4 0.030 at VGS = 2.5 V 4 0.036 at VGS = 1.8 V 4 VDS (V) 12 Qg (Typ.) 7.5 nC • Halogen-free According to IEC 61249-2-21 Definition |
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Si1422DH 2002/95/EC OT-363 SC-70 Si1422DH-T1-GE3 11-Mar-11 sc 1287 | |
si1422Contextual Info: SPICE Device Model Si1422DH www.vishay.com Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si1422DH 11-Mar-11 si1422 | |
29764Contextual Info: Si1422DH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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Si1422DH AN609, 19-May-10 29764 | |
Contextual Info: New Product Si1422DH Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.026 at VGS = 4.5 V 4 0.030 at VGS = 2.5 V 4 0.036 at VGS = 1.8 V 4 VDS (V) 12 Qg (Typ.) 7.5 nC • Halogen-free According to IEC 61249-2-21 Definition |
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Si1422DH 2002/95/EC OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SPICE Device Model Si1422DH www.vishay.com Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
Original |
Si1422DH 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product Si1422DH Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.026 at VGS = 4.5 V 4 0.030 at VGS = 2.5 V 4 0.036 at VGS = 1.8 V 4 VDS (V) 12 Qg (Typ.) 7.5 nC • Halogen-free According to IEC 61249-2-21 Definition |
Original |
Si1422DH 2002/95/EC OT-363 SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
si1422Contextual Info: New Product Si1422DH Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.026 at VGS = 4.5 V 4 0.030 at VGS = 2.5 V 4 0.036 at VGS = 1.8 V 4 VDS (V) 12 Qg (Typ.) 7.5 nC • Halogen-free According to IEC 61249-2-21 Definition |
Original |
Si1422DH 2002/95/EC OT-363 SC-70 Si1422DH-T1-GE3 18-Jul-08 si1422 | |
sc 1287
Abstract: SI1422DH-T1-GE3
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Si1422DH 2002/95/EC OT-363 SC-70 Si1422DH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sc 1287 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 |