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Vishay Siliconix SI1413DH-T1-E3 MOSFET P-CH 20V 2.3A SC70-6
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DigiKey	SI1413DH-T1-E3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.27026	Buy Now
Vishay Intertechnologies SI1413DH-T1-GE3
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Bristol Electronics	SI1413DH-T1-GE3		10,793			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SI1413DH Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
Si1413DH		Vishay Intertechnology	P-Channel 20-V (D-S) MOSFET		Original	PDF
SI1413DH		Vishay Siliconix	MOSFETs		Original	PDF
Si1413DH SPICE Device Model		Vishay	P-Channel 20-V (D-S) MOSFET		Original	PDF
SI1413DH-T1-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 2.3A SC-70-6		Original	PDF
SI1413DH-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 2.3A SC-70-6		Original	PDF

SI1413DH Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Si1413DH Abstract: No abstract text available Text: SPICE Device Model Si1413DH Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si1413DH 18-Jul-08
Untitled Abstract: No abstract text available Text: Si1413DH Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.115 at VGS = - 4.5 V - 2.9 0.155 at VGS = - 2.5 V - 2.4 0.220 at VGS = - 1.8 V - 2.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated	Original	PDF	Si1413DH SC-70 2002/95/EC OT-363 SC-70 Si1413DH-T1-E3 Si1413DH-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU.
Untitled Abstract: No abstract text available Text: Si1413DH New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.115 @ VGS = –4.5 V –2.9 0.155 @ VGS = –2.5 V –2.4 0.220 @ VGS = –1.8 V –2.0 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package	Original	PDF	Si1413DH SC-70 OT-363 SC-70 08-Apr-05
Part marking SC70 bc Abstract: No abstract text available Text: Si1413DH Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.115 at VGS = - 4.5 V - 2.9 0.155 at VGS = - 2.5 V - 2.4 0.220 at VGS = - 1.8 V - 2.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated	Original	PDF	Si1413DH SC-70 2002/95/EC OT-363 SC-70 Si1413DH-T1-E3 Si1413DH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC Part marking SC70 bc
Si1413DH Abstract: No abstract text available Text: SPICE Device Model Si1413DH Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si1413DH S-50151Rev. 07-Feb-05
AN609 Abstract: Si1413DH Text: Si1413DH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si1413DH AN609 01-Mar-06
marking code BC Abstract: Si19xxEDH Text: Si1413DH Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.115 at VGS = - 4.5 V - 2.9 0.155 at VGS = - 2.5 V - 2.4 0.220 at VGS = - 1.8 V - 2.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated	Original	PDF	Si1413DH SC-70 2002/95/EC OT-363 SC-70 Si1413DH-T1-E3 Si1413DH-T1-GE3 11-Mar-11 marking code BC Si19xxEDH
Si1413DH Abstract: marking code BC Text: Si1413DH Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.115 at VGS = - 4.5 V - 2.9 0.155 at VGS = - 2.5 V - 2.4 0.220 at VGS = - 1.8 V - 2.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated	Original	PDF	Si1413DH SC-70 2002/95/EC OT-363 SC-70 Si1413DH-T1-E3 Si1413DH-T1-GE3 18-Jul-08 marking code BC
Si1413DH Abstract: marking code BC Text: Si1413DH New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.115 @ VGS = –4.5 V –2.9 0.155 @ VGS = –2.5 V –2.4 0.220 @ VGS = –1.8 V –2.0 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package	Original	PDF	Si1413DH SC-70 OT-363 SC-70 18-Jul-08 marking code BC
marking code BC Abstract: Si1413DH Text: Si1413DH New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.115 @ VGS = –4.5 V –2.9 0.155 @ VGS = –2.5 V –2.4 0.220 @ VGS = –1.8 V –2.0 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package	Original	PDF	Si1413DH SC-70 OT-363 SC-70 S-20952--Rev. 01-Jul-02 marking code BC
Si1413DH Abstract: No abstract text available Text: SPICE Device Model Si1413DH Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si1413DH 21-Aug-02
Siliconix Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123	Original	PDF	2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
Untitled Abstract: No abstract text available Text: 19-0810; Rev 0; 4/07 Overvoltage Protectors with External pFET Features The MAX4923–MAX4926 overvoltage protection OVP controllers protect low-voltage systems against high-voltage faults of up to +28V with an appropriate external pFET. When the input voltage exceeds the overvoltage lockout (OVLO) threshold, or falls below the	Original	PDF	MAX4923â MAX4926 MAX4923) MAX4924) MAX4925) MAX4926) MAX4926
GS 069 Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8 Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no	Original	PDF	Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8

C9847 Abstract: MMD41 C2792 foxconn X-TAL 25MHz VT1612 MMD56 CB1410-B0 MMD54 MMD50 Text: A B C D E TPC02 MLB 4 3 2 1 PAGE 01 : COVER PAGE PAGE 02 : SYSTEM BLOCK DIAGRAM PAGE 03 : CPU-1 PAGE 04 : CPU-2 PAGE 05 : NB-1 PAGE 06 : NB-2 PAGE 07 : NB-3 PAGE 08 : SB-1 PAGE 09 : SB-2 PAGE 10 : SB-3 PAGE 11 : CLOCK PAGE 12 : DDR SODIMM PAGE 13 : DDR_TERMINATOR & VTT CAP	Original	PDF	TPC02 CB-1410 1394a PC87591 MAX1999) 2N7002 2N7002 CPU1V25 10uF/25V C9847 MMD41 C2792 foxconn X-TAL 25MHz VT1612 MMD56 CB1410-B0 MMD54 MMD50