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    SI-RECTIFIER 10A Search Results

    SI-RECTIFIER 10A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    P104 Coilcraft Inc Silicon Controlled Rectifier, Visit Coilcraft Inc
    CS60-010S Coilcraft Inc Current Sense Transformer, 10A Visit Coilcraft Inc Buy
    CS60-010L Coilcraft Inc Current Sense Transformer, 10A, ROHS COMPLIANT Visit Coilcraft Inc
    CS1050 Coilcraft Inc Current Sense Transformer, 10A, 1:50 Visit Coilcraft Inc Buy
    D1869 Coilcraft Inc Current Sense Transformer, 10A, 1:50, Visit Coilcraft Inc Buy

    SI-RECTIFIER 10A Datasheets Context Search

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    cm 324

    Abstract: No abstract text available
    Text: PD-97804 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67434 550V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHNJ67434 IRHNJ63434 Radiation Level RDS(on) 100K Rads (Si) 2.9Ω ID 3.4A 300K Rads (Si) 3.4A 2.9Ω International Rectifier’s R6TM technology provides


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    PDF PD-97804 IRHNJ67434 IRHNJ63434 90MeV/ MIL-STD-750, MlL-STD-750, cm 324

    IRHNJ597230

    Abstract: IRHNJ593230
    Text: PD - 94046D RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A International Rectifier’s R5TM technology provides


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    PDF 94046D IRHNJ597230 IRHNJ597230 IRHNJ593230 -200V, MIL-STD-750, MlL-STD-750,

    Untitled

    Abstract: No abstract text available
    Text: PD-97805 IRHY67434CM 550V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA TECHNOLOGY Product Summary Part Number IRHY67434CM IRHY63434CM Radiation Level RDS(on) 100K Rads (Si) 3.0Ω 300K Rads (Si) 3.0Ω ID 3.4A 3.4A International Rectifier’s R6 TM technology provides


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    PDF PD-97805 O-257AA) IRHY67434CM IRHY63434CM 90MeV/ O-257AA. MIL-PRF-19500

    Untitled

    Abstract: No abstract text available
    Text: PD - 94046D IRHNJ597230 200V, P-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A International Rectifier’s R5TM technology provides


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    PDF 94046D IRHNJ597230 IRHNJ597230 IRHNJ593230 suc200V, MIL-STD-750, MlL-STD-750,

    Untitled

    Abstract: No abstract text available
    Text: PD-97198A 2N7598U3 IRHNJ67C30 600V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 TECHNOLOGY Product Summary Part Number IRHNJ67C30 IRHNJ63C30 Radiation Level RDS(on) 100K Rads (Si) 2.9Ω 300K Rads (Si) 2.9Ω ID 3.4A 3.4A International Rectifier’s R6TM technology provides


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    PDF PD-97198A 2N7598U3 IRHNJ67C30 IRHNJ63C30 90MeV/ MIL-STD-750, MlL-STD-750,

    95837

    Abstract: PD-95837 IRHY63C30CM IRHY67C30CM RG 2006 10A 600V
    Text: PD-95837 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY67C30CM 600V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHY67C30CM 100K Rads (Si) 3.0Ω IRHY63C30CM 300K Rads (Si) 3.0Ω ID 3.4A 3.4A International Rectifier’s R6 TM technology provides


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    PDF PD-95837 O-257AA) IRHY67C30CM IRHY67C30CM IRHY63C30CM 90MeV/ 5M-1994. O-257AA. 95837 PD-95837 RG 2006 10A 600V

    2n7598

    Abstract: 2N7598U3 IRHNJ67C30 2N75 IRHNJ63C30 PD-97198A
    Text: PD-97198A 2N7598U3 IRHNJ67C30 600V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 TECHNOLOGY Product Summary Part Number IRHNJ67C30 IRHNJ63C30 Radiation Level RDS(on) 100K Rads (Si) 2.9Ω 300K Rads (Si) 2.9Ω ID 3.4A 3.4A International Rectifier’s R6TM technology provides


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    PDF PD-97198A 2N7598U3 IRHNJ67C30 IRHNJ63C30 90MeV/ MIL-STD-750, MlL-STD-750, 2n7598 2N7598U3 IRHNJ67C30 2N75 IRHNJ63C30 PD-97198A

    mosfet motor dc 48v

    Abstract: IRHY593034CM IRHY597034CM T0-257AA G 331
    Text: PD - 94663A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY597034CM 60V, P-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) ID IRHY597034CM 100K Rads (Si) 0.095Ω -18A* IRHY593034CM 300K Rads (Si) 0.095Ω -18A* International Rectifier’s R5TM technology provides


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    PDF 4663A O-257AA) IRHY597034CM IRHY597034CM IRHY593034CM 5M-1994. O-257AA. mosfet motor dc 48v T0-257AA G 331

    IRHNJ63234

    Abstract: IRHNJ67234 PD-97197
    Text: PD-97197 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67234 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHNJ67234 IRHNJ63234 Radiation Level RDS(on) ID 100K Rads (Si) 0.21Ω 12.4A 300K Rads (Si) 0.21Ω 12.4A SMD-0.5 International Rectifier’s R6TM technology provides


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    PDF PD-97197 IRHNJ67234 IRHNJ63234 90MeV/ MIL-STD-750, MlL-STD-750, IRHNJ63234 IRHNJ67234 PD-97197

    PD-94667C

    Abstract: IRHMS67260 IRF P CHANNEL MOSFET 200V 20A IRHMS63260 ISD45A
    Text: PD-94667C RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS67260 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67260 100K Rads (Si) RDS(on) 0.029Ω ID 45A* IRHMS63260 0.029Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides


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    PDF PD-94667C O-254AA) IRHMS67260 IRHMS67260 IRHMS63260 90MeV/ O-254AA. MIL-PRF-19500 PD-94667C IRF P CHANNEL MOSFET 200V 20A IRHMS63260 ISD45A

    Untitled

    Abstract: No abstract text available
    Text: PD - 94343 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY597130CM 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level RDS(on) ID IRHY597130CM 100K Rads (Si) 0.215Ω -12.5A IRHY593130CM 300K Rads (Si) 0.215Ω -12.5A International Rectifier’s R5TM technology provides


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    PDF O-257AA) IRHY597130CM IRHY597130CM IRHY593130CM 5M-1994. O-257AA.

    Untitled

    Abstract: No abstract text available
    Text: PD-94764D RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT UB IRHLUB7970Z4 60V, P-CHANNEL TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) ID IRHLUB7970Z4 100K Rads (Si) 1.3Ω -0.53A IRHLUB7930Z4 300K Rads (Si) 1.3Ω -0.53A International Rectifier’s R7TM Logic Level Power


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    PDF PD-94764D IRHLUB7970Z4 IRHLUB7930Z4 MIL-PRF-19500/255L

    IRHMS63264

    Abstract: IRHMS67264
    Text: PD-96991 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS67264 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHMS67264 100K Rads (Si) 0.041Ω IRHMS63264 300K Rads (Si) 0.041Ω ID 45A 45A International Rectifier’s R6TM technology provides


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    PDF PD-96991 O-254AA) IRHMS67264 IRHMS67264 IRHMS63264 90MeV/ O-254AA. MIL-PRF-19500

    IRHYS63234CM

    Abstract: IRHYS67234CM
    Text: PD-97193 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67234CM 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67234CM 100K Rads (Si) 0.22Ω ID 12A IRHYS63234CM 300K Rads (Si) 12A 0.22Ω International Rectifier’s R6 TM technology provides


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    PDF PD-97193 O-257AA) IRHYS67234CM IRHYS67234CM IRHYS63234CM 90MeV/ 5M-1994. O-257AA.

    Untitled

    Abstract: No abstract text available
    Text: PD-96923 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67230 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHNJ67230 IRHNJ63230 Radiation Level RDS(on) 100K Rads (Si) 0.13Ω 300K Rads (Si) 0.13Ω ID 16A 16A SMD-0.5 International Rectifier’s R6TM technology provides


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    PDF PD-96923 IRHNJ67230 IRHNJ63230 90MeV/ MIL-STD-750, MlL-STD-750,

    IRHY593230CM

    Abstract: IRHY597230CM T0-257AA
    Text: PD - 94319A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY597230CM 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level RDS(on) ID IRHY597230CM 100K Rads (Si) 0.515Ω -8.0A IRHY593230CM 300K Rads (Si) 0.515Ω -8.0A International Rectifier’s R5TM technology provides


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    PDF 4319A O-257AA) IRHY597230CM IRHY597230CM IRHY593230CM 5M-1994. O-257AA. T0-257AA

    2N7599T3

    Abstract: No abstract text available
    Text: PD-95837A 2N7599T3 IRHY67C30CM 600V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHY67C30CM 100K Rads (Si) 3.0Ω IRHY63C30CM 300K Rads (Si) 3.0Ω ID 3.4A 3.4A International Rectifier’s R6 TM technology provides


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    PDF PD-95837A 2N7599T3 IRHY67C30CM O-257AA) IRHY67C30CM IRHY63C30CM 90MeV/ O-257AA. MIL-PRF-19500 2N7599T3

    IRHF593230

    Abstract: IRHF597230
    Text: PD - 94450 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number IRHF597230 IRHF593230 Radiation Level RDS(on) ID 100K Rads (Si) 0.54Ω -4.5A 300K Rads (Si) 0.54Ω -4.5A International Rectifier’s R5TM technology provides


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    PDF IRHF597230 IRHF593230 MIL-STD-750, MlL-STD-750, O-205AF IRHF593230 IRHF597230

    mev smd diode

    Abstract: No abstract text available
    Text: PD-96959 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-2 IRHNA67164 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNA67164 100K Rads (Si) RDS(on) 0.018Ω ID 56A* IRHNA63164 0.018Ω 56A* 300K Rads (Si) SMD-2 International Rectifier’s R6 technology provides


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    PDF PD-96959 IRHNA67164 IRHNA63164 90MeV/ MIL-STD-750, MlL-STD-750, mev smd diode

    IRHYS67230CM

    Abstract: IRHYS63230CM PD-96925B
    Text: PD-96925B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYS63230CM 300K Rads (Si) 16A 0.13Ω International Rectifier’s R6 TM technology provides


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    PDF PD-96925B O-257AA) IRHYS67230CM IRHYS67230CM IRHYS63230CM 90MeV/ 5M-1994. O-257AA. PD-96925B

    IRHMS63160

    Abstract: IRHMS67160
    Text: PD-94723A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS67160 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67160 100K Rads (Si) RDS(on) 0.011Ω ID 45A* IRHMS63160 0.011Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides


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    PDF PD-94723A O-254AA) IRHMS67160 IRHMS67160 IRHMS63160 90MeV/ O-254AA. MIL-PRF-19500 IRHMS63160

    IRF 949

    Abstract: IRHNA63260 IRHNA67260
    Text: PD - 94342C RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-2 IRHNA67260 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNA67260 100K Rads (Si) IRHNA63260 300K Rads (Si) RDS(on) 0.028Ω 0.028Ω ID 63A 63A SMD-2 International Rectifier’s R6 technology provides


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    PDF 94342C IRHNA67260 IRHNA67260 IRHNA63260 90MeV/ controll875A/ MIL-STD-750, MlL-STD-750, IRF 949

    IRHY597130CM

    Abstract: IRHY593130CM T0-257AA
    Text: PD - 94343 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY597130CM 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level RDS(on) ID IRHY597130CM 100K Rads (Si) 0.215Ω -12.5A IRHY593130CM 300K Rads (Si) 0.215Ω -12.5A International Rectifier’s R5TM technology provides


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    PDF O-257AA) IRHY597130CM IRHY597130CM IRHY593130CM 5M-1994. O-257AA. T0-257AA

    Untitled

    Abstract: No abstract text available
    Text: PD-96931 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67134 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ67134 100K Rads (Si) RDS(on) 0.088Ω ID 19A IRHNJ63134 0.088Ω 19A 300K Rads (Si) SMD-0.5 International Rectifier’s R6TM technology provides


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    PDF PD-96931 IRHNJ67134 IRHNJ67134 IRHNJ63134 90MeV/ MIL-STD-750, MlL-STD-750,