IRHYS63230CM Search Results

IRHYS63230CM Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRHYS63230CM		International Rectifier			Original	PDF

IRHYS63230CM Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: PD-96925 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYS63230CM 300K Rads (Si) 16A 0.13Ω International Rectifier’s R6 TM technology provides	Original	PDF	PD-96925 O-257AA) IRHYS67230CM IRHYS63230CM 90MeV/ 5M-1994. O-257AA.
Untitled Abstract: No abstract text available Text: PD-96925A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYS63230CM 300K Rads (Si) 16A 0.13Ω Low-Ohmic	Original	PDF	PD-96925A O-257AA) IRHYS67230CM IRHYS67230CM IRHYS63230CM O-257AA 90MeV/
2N7592 Abstract: 2N7592T3 Text: PD-96925C 2N7592T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHYS67230CM Radiation Level 100K Rads (Si) IRHYS63230CM 300K Rads (Si) RDS(on) I D 0.13Ω 16A 0.13Ω 16A	Original	PDF	PD-96925C 2N7592T3 O-257AA) IRHYS67230CM IRHYS63230CM 90MeV/ 5M-1994. O-257AA. 2N7592
2n7592 Abstract: No abstract text available Text: PD-96925C 2N7592T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHYS67230CM Radiation Level 100K Rads (Si) IRHYS63230CM 300K Rads (Si) RDS(on) I D 0.13Ω 16A 0.13Ω 16A	Original	PDF	PD-96925C 2N7592T3 O-257AA) IRHYS67230CM IRHYS63230CM 90MeV/ 5M-1994. O-257AA. 2n7592
IRHYS67230CM Abstract: IRHYS63230CM PD-96925B Text: PD-96925B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYS63230CM 300K Rads (Si) 16A 0.13Ω International Rectifier’s R6 TM technology provides	Original	PDF	PD-96925B O-257AA) IRHYS67230CM IRHYS67230CM IRHYS63230CM 90MeV/ 5M-1994. O-257AA. PD-96925B
Untitled Abstract: No abstract text available Text: PD-96925C 2N7592T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHYS67230CM Radiation Level 100K Rads (Si) IRHYS63230CM 300K Rads (Si) RDS(on) I D 0.13Ω 16A 0.13Ω 16A	Original	PDF	PD-96925C 2N7592T3 O-257AA) IRHYS67230CM IRHYS63230CM 90MeV/ 5M-1994. O-257AA.
IRF460 Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065 Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,	Original	PDF	30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065