Untitled
Abstract: No abstract text available
Text: PD-96925 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYS63230CM 300K Rads (Si) 16A 0.13Ω International Rectifier’s R6 TM technology provides
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PD-96925
O-257AA)
IRHYS67230CM
IRHYS63230CM
90MeV/
5M-1994.
O-257AA.
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Untitled
Abstract: No abstract text available
Text: PD-96925A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYS63230CM 300K Rads (Si) 16A 0.13Ω Low-Ohmic
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PD-96925A
O-257AA)
IRHYS67230CM
IRHYS67230CM
IRHYS63230CM
O-257AA
90MeV/
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2N7592
Abstract: 2N7592T3
Text: PD-96925C 2N7592T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHYS67230CM Radiation Level 100K Rads (Si) IRHYS63230CM 300K Rads (Si) RDS(on) I D 0.13Ω 16A 0.13Ω 16A
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PD-96925C
2N7592T3
O-257AA)
IRHYS67230CM
IRHYS63230CM
90MeV/
5M-1994.
O-257AA.
2N7592
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2n7592
Abstract: No abstract text available
Text: PD-96925C 2N7592T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHYS67230CM Radiation Level 100K Rads (Si) IRHYS63230CM 300K Rads (Si) RDS(on) I D 0.13Ω 16A 0.13Ω 16A
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PD-96925C
2N7592T3
O-257AA)
IRHYS67230CM
IRHYS63230CM
90MeV/
5M-1994.
O-257AA.
2n7592
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IRHYS67230CM
Abstract: IRHYS63230CM PD-96925B
Text: PD-96925B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYS63230CM 300K Rads (Si) 16A 0.13Ω International Rectifier’s R6 TM technology provides
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PD-96925B
O-257AA)
IRHYS67230CM
IRHYS67230CM
IRHYS63230CM
90MeV/
5M-1994.
O-257AA.
PD-96925B
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Untitled
Abstract: No abstract text available
Text: PD-96925C 2N7592T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHYS67230CM Radiation Level 100K Rads (Si) IRHYS63230CM 300K Rads (Si) RDS(on) I D 0.13Ω 16A 0.13Ω 16A
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PD-96925C
2N7592T3
O-257AA)
IRHYS67230CM
IRHYS63230CM
90MeV/
5M-1994.
O-257AA.
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IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,
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30am-5
44-0-1737-2com
DB8029C
IRF460
SMD TRANSISTOR MARKING k38
smd transistor k38
we 751002 s
SMD-6C
transistor smd k45
RAD-HARD igbt
IRF3504
afl2805s manufactured by international rectifier
550-065
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