F-100
Abstract: ML6553 ML6553CS-1
Text: www.fairchildsemi.com ML6553 Bus Termination Regulator Features General Description • Can source and sink up to 1A • Generates termination voltages for DDR SDRAM, SSTL_2 SDRAM, SGRAM, or equivalent memories • Generates termination voltages for active termination
|
Original
|
PDF
|
ML6553
800mA
ML6553
DS30001584
F-100
ML6553CS-1
|
SMD 7014
Abstract: No abstract text available
Text: www.fairchildsemi.com ML6554 3A Bus Termination Regulator Features Description • Can source and sink up to 3A, no heat sink required • Integrated Power MOSFETs • Generates termination voltages for DDR SDRAM, SSTL-2 SDRAM, SGRAM, or equivalent memories
|
Original
|
PDF
|
ML6554
ML6554
DS30006554
SMD 7014
|
SGRAM
Abstract: towerpro SO-DIMM 144-pin
Text: DMS Series - SO - DIMM Sockets 144-pin for SGRAM module SO-DIMM sockets for SGRAM’s are made of hi-temp resistant LCP. Available in two different PC-board distances. Insertion & extraction of the module can be made without any tools. Positive polarization prevents wrong insertion of the module.
|
Original
|
PDF
|
144-pin
SGRAM
towerpro
SO-DIMM 144-pin
|
DMX RECEIVER
Abstract: HYB39 HYB39D32322TQ LQFP100 infineon sgram SGRAM
Text: Memories for Graphics Systems 32Mbit DDR SGRAM HYB39D32322TQ -6 -A2 Die revision A2 User’s Manual Version 2.12 06.2000 Edition 06.2000 This edition was realized using the software system FrameMaker. Published by Infineon Technologies, Marketing-Kommunikation,
|
Original
|
PDF
|
32Mbit
HYB39D32322TQ
DMX RECEIVER
HYB39
LQFP100
infineon sgram
SGRAM
|
Hitachi DSA00164
Abstract: No abstract text available
Text: HM5216326 Series 16M LVTTL interface SGRAM 125 MHz/100 MHz/83 MHz 256-kword x 32-bit × 2-bank ADE-203-678E Z Rev. 2.0 Oct. 2, 1998 Description All inputs and outputs signals refers to the rising edge of the clock input. The HM5216326 provides 2 banks to realize better performance. 8 column block write function and write per bit function are provided
|
Original
|
PDF
|
HM5216326
Hz/100
Hz/83
256-kword
32-bit
ADE-203-678E
Hitachi DSA00164
|
MB81G83222-010
Abstract: MB81G83222-012 MB81G83222-015 MB81G83222PQ 216-0040
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-12101-2E MEMORY CMOS 2 x 128K × 32 SYNCHRONOUS GRAM MB81G83222-010/-012/-015 CMOS 2 BANKS OF 131,072-WORDS × 32-BIT SYNCHRONOUS GRAPHIC RANDOM ACCESS MEMORY • DESCRIPTION The Fujitsu MB81G83222 is a CMOS Synchronous Graphic Random Access Memory SGRAM containing
|
Original
|
PDF
|
DS05-12101-2E
MB81G83222-010/-012/-015
072-WORDS
32-BIT
MB81G83222
32-bit
F9703
MB81G83222-010
MB81G83222-012
MB81G83222-015
MB81G83222PQ
216-0040
|
Siemens SCR components Data Manual
Abstract: HYB39S16320TQ HYB39S16320TQ-6 HYB39S16320TQ-7 HYB39S16320TQ-8 SIEMENS BST t
Text: Memories for Graphics Systems 16M Synchronous Graphics RAM SGRAM HYB39S16320TQ-6 HYB39S16320TQ-7 HYB39S16320TQ-8 Version 2.1.00 Preliminary Information SGRAM 1.1999 HYB39S16320TQ-6/-7/-8 Revision History: Current Version 2.1.00 Previous Version: 1.x.xx Page
|
Original
|
PDF
|
HYB39S16320TQ-6
HYB39S16320TQ-7
HYB39S16320TQ-8
HYB39S16320TQ-6/-7/-8
HYB39S16320TQ-6
TQFP-100
20x14mm²
MS-026
Siemens SCR components Data Manual
HYB39S16320TQ
HYB39S16320TQ-7
HYB39S16320TQ-8
SIEMENS BST t
|
Untitled
Abstract: No abstract text available
Text: ESMT SGRAM M32L1632512A 256K x 32 Bit x 2 Banks Synchronous Graphic RAM FEATURES GENERAL DESCRIPTION y y y y The M32L1632512A is 16, 777, 216 bits synchronous high data rate Dynamic RAM organized as 2 x 262, 144 words by 32 bits, fabricated with ESMT’s high performance CMOS technology. Synchronous
|
Original
|
PDF
|
M32L1632512A
M32L1632512A
|
MG802C256Q
Abstract: DS06 MOSYS QFP-1420 MG802C256
Text: MG802C256 Ultra Low Latency, High Performance MOSYS 256Kx32 SGRAM Preliminary Information Features • • • • • • • • • • • • • • • SGRAM protocol High bandwidth 100MHz-166MHz operation Reduced Latency Improved critical timing parameter limits
|
Original
|
PDF
|
MG802C256
256Kx32
100MHz-166MHz
256Kx32
100-pin
MG802C256Q
DS06
MOSYS
QFP-1420
MG802C256
|
HY58163210TQ-8F
Abstract: HY58163210TQ-10F
Text: 512Kx32bit Synchronous Graphics RAM HY58163210 PRELIMINARY DESCRIPTION The sixteen megabit Synchronous Graphics RAM SGRAM is a single port, application specific memory device designed for graphics applications. It is organized as 256K words per bank x 32 bits
|
Original
|
PDF
|
512Kx32bit
HY58163210
Mar98
HY58163210
HY58163210TQ-8F
HY58163210TQ-10F
|
timing controller SHART
Abstract: T21N K4U52324Q SAMSUNG GDDR4 K4U52324QE-BC09 GDDR4
Text: 512M GDDR4 SGRAM K4U52324QE 512Mbit GDDR4 SGRAM 2M x 32Bit x 8 Banks Graphic Double Data Rate 4 Synchronous DRAM with Uni-directional Data Strobe and DLL 136Ball FBGA Revision 1.0 June 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
|
Original
|
PDF
|
K4U52324QE
512Mbit
32Bit
136Ball
timing controller SHART
T21N
K4U52324Q
SAMSUNG GDDR4
K4U52324QE-BC09
GDDR4
|
Untitled
Abstract: No abstract text available
Text: HYM8V6451210 PG-Series SO DIMM 512Kx64 bit SGRAM MODULE based on 512Kx32 SGRAM, LVTTL, 1K-Refresh PRELIMINARY DESCRIPTION The HYM8V6451210 is high speed 3.3 Volt Synchronous Graphic RAM module consisting of two 512Kx32 bit Synchronous GRAMs in 100pin QFP on a 144 pin glass-epoxy circuit board. 0.1µF and 0.01µF
|
Original
|
PDF
|
HYM8V6451210
512Kx64
512Kx32
512Kx32
100pin
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-12102-3E MEMORY CMOS 2 x 256K × 32 BIT SYNCHRONOUS GRAPHIC RAM MB81G163222-70/-80/-10 CMOS 2-Bank of 262,144-Word × 32 Bit Synchronous Graphic Random Access Memory • DESCRIPTION The Fujitsu MB81G163222 is a CMOS Synchronous Graphic Random Access Memory SGRAM containing
|
Original
|
PDF
|
DS05-12102-3E
MB81G163222-70/-80/-10
144-Word
MB81G163222
32-bit
D-63303
F9802
|
MS82V48540
Abstract: No abstract text available
Text: PEDS82V48540-01 1Semiconductor MS82V48540 This version: Jul. 2001 Preliminary 393,216-Word x 32-Bit × 4-Bank FIFO-SGRAM GENERAL DESCRIPTION The MS82V48540 is a 48-Mbit system clock synchronous dynamic random access memory. In addition to the conventional random read/write access function, the MS82V48540 provides the automatic row address increment
|
Original
|
PDF
|
PEDS82V48540-01
MS82V48540
216-Word
32-Bit
MS82V48540
48-Mbit
|
|
|
Untitled
Abstract: No abstract text available
Text: IBM13V25649AP IBM13V51649AN IBM13V25649AN IBM13V51649AP 256K/512K x 64 SGRAM SO DIMM Features 144 Pin Graphics JEDEC Standard, 8 Byte Synchro nous Small Outline Dual-In-line Memory Module Performance: Speed Grade 7R5 ! 10 ! Units I I Clock Frequency 133 ! 100 ! MHz
|
OCR Scan
|
PDF
|
IBM13V25649AP
IBM13V51649AN
IBM13V25649AN
IBM13V51649AP
256K/512K
s5649AP
|
1024X256
Abstract: No abstract text available
Text: MEMORY 2 x 256K x 32 BIT SYNCHRONOUS GRAPHIC RA CMOS 2-Bank of 262,144-Word x 32 Bit Synchronous Graphie Random Access Memory • DESCRIPTION The Fujitsu MB81G163222 is a CMOS Synchronous Graphie Random Access Memory SGRAM containing 16,777,216 memory cells accessible in an 32-bit tormat. The MB81G163222 teatures a fully synchronous
|
OCR Scan
|
PDF
|
144-Word
MB81G163222
32-bit
F9802
1024X256
|
Untitled
Abstract: No abstract text available
Text: ADVANCE 512K x 32 DDR SGRAM MICRON I TECHNOLOGY, INC. MT45V512K32 - 128K x 32 x 4 banks DOUBLE DATA RATE SGRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • Internal, pipelined double data rate DDR architec
|
OCR Scan
|
PDF
|
MT45V512K32
|
Untitled
Abstract: No abstract text available
Text: ADVANCE M IC R O N I MT41 LC256K32D4 S 256K x 32 SGRAM f ^ D A D U I f ^ C n A R /l w r iM IV I n M r n l V / O 256K x 32 SGRAM PULSED RAS, DUAL BANK, p i p e lin e d ,3 .3 V o p e r a t io n NEW SYNCHRONOUS FEATURES OPTIONS MARKING • Timing 10ns access
|
OCR Scan
|
PDF
|
LC256K32D4
100-pin
MT41LC256K32D4LG-15
00123bb
01pm5-Rev
|
Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON I 256K’512Kx64 SGRAM SODIMMs TECHNOLOGY. INC. SYNCHRONOUS GRAPHICS RAM DIMM mt2lg25664 K h MT4LG51264,K)H FEATURES PIN ASSIGNMENT (Front View) • 144-pin, sm all-outline, dual in-line m emory module (DIMM) • 2MB (256K x 64) and 4MB (512K x 64)
|
OCR Scan
|
PDF
|
512Kx
mt2lg25664
144-pin,
bill54e
|
mg802c256q
Abstract: G802C256
Text: <♦ M G802C256 Ultra Low Latency, High Performance M o Sys’ 256Kx32 SGRAM Preliminary Inform ation !g§|oooooooooo|f Features DQ3_1 VccQr-12 DQ4 : 3 DQ5c: 4 VSSQ- □ 5 DQ6! 13 DQ7i 17 VccQ! 18 DQ16:- y DQ17 J 1U VssQ! I 11 DQ18: 12
|
OCR Scan
|
PDF
|
z-166M
256Kx32
00-pin
G802C256
256Kx32
Page20
mg802c256q
|
Untitled
Abstract: No abstract text available
Text: 16M DDR SGRAM KM432D5131 16Mbit DDR SGRAM 128K x 32Bit x 4 Banks Double Data Rate Synchronous Graphic RAM with Bi-directional Data Strobe Revision 1.1 December 1998 Samsung Electronics reserves the right to change products or specification without notice.
|
OCR Scan
|
PDF
|
KM432D5131
16Mbit
32Bit
125MHz
143MHz/125
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT jUPD4811650 for Rev.E 16 M-BIT SYNCHRONOUS GRAM 256K-WORD BY 32-BIT BY 2-BANK Description The ,uPD4811650 is a synchronous graphics memory SGRAM organized as 262,144 words x 32 bits x 2 banks
|
OCR Scan
|
PDF
|
jUPD4811650
256K-WORD
32-BIT
uPD4811650
100-pin
|
Untitled
Abstract: No abstract text available
Text: / Trident Product Brief Cyber9397/95' High Performance 3D Multimedia Flat Panel Controller Features • Single-Cycle 3D GUI engine with on-chip Setup Engine • ClearTV for flicker free TV-Output • Single-Cycle EDO DRAM/SDRAM/SGRAM l/F 1/2/4MB • Independent refresh rate for simultaneous display
|
OCR Scan
|
PDF
|
Cyber9397/95'
1280x1024
|
Untitled
Abstract: No abstract text available
Text: AMP METRIC SO DIMM Sockets Catalog 1307612 Dimensions are millimeters over inches Revised 7-01 Dual Read-Out Sockets for SDRAM and SGRAM Product Facts • Sockets Dual Read-Out SDRAM and SGRAM ■ Cam-in module loading provides easy insertion ■ Positive wipe on pads
|
OCR Scan
|
PDF
|
144-position
|
