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    Diodes Incorporated SF10HG-T

    DIODE GEN PURP 500V 1A DO41
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SF10HG-T Reel 5,000
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    SF10HG Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SF10HG Diodes Incorporated Short Form Selection Guide Original PDF
    SF10HG Diodes Incorporated 1.0A SUPER-FAST GLASS PASSIVATED RECTIFIER Original PDF
    SF10HG Diodes Incorporated 1.0A SUPER-FAST GLASS PASSIVATED RECTIFIER Original PDF
    SF10HG Lite-On Technology 500V, 1.0A super fast glass passivated rectifier Original PDF
    SF10HG Vishay Ultra-Fast Rectifier (trr less than 100nsec) Original PDF
    SF10HG-A Diodes Incorporated RECTIFIER FAST-RECOVERY SINGLE 1A 500V 30A-ifsm 1.5V-vf 50ns 10uA-ir DO-41 5K/AMMO Original PDF
    SF10HG-B Diodes Incorporated RECTIFIER FAST-RECOVERY SINGLE 1A 500V 30A-ifsm 1.5V-vf 50ns 10uA-ir DO-41 1K/BULK Original PDF
    SF10HG-T Diodes Incorporated RECTIFIER FAST-RECOVERY SINGLE 1A 500V 30A-ifsm 1.5V-vf 50ns 10uA-ir DO-41 5K/REEL-13 Original PDF

    SF10HG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SF10AG

    Abstract: SF10BG SF10CG SF10DG SF10FG SF10GG SF10HG SF10JG
    Text: SF10AG - SF10JG 1.0A SUPER-FAST GLASS PASSIVATED RECTIFIER SPICE MODELS: SF10AG SF10BG SF10CG SF10DG SF10FG SF10GG SF10HG SF10JG Features • · · · · · · Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward


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    PDF SF10AG SF10JG SF10BG SF10CG SF10DG SF10FG SF10GG SF10HG SF10CG SF10JG

    Untitled

    Abstract: No abstract text available
    Text: SF10AG - SF10JG 1.0A SUPER-FAST GLASS PASSIVATED RECTIFIER SPICE MODELS: SF10AG SF10BG SF10CG SF10DG SF10FG SF10GG SF10HG SF10JG Features • · · · · · · Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop


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    PDF SF10AG SF10JG SF10BG SF10CG SF10DG SF10FG SF10GG SF10HG

    Untitled

    Abstract: No abstract text available
    Text: SF10AG - SF10JG 1.0A SUPER-FAST GLASS PASSIVATED RECTIFIER SPICE MODELS: SF10AG SF10BG SF10CG SF10DG SF10FG SF10GG SF10HG SF10JG Features • · · · · · · Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward


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    PDF SF10AG SF10JG SF10BG SF10CG SF10DG SF10FG SF10GG SF10HG

    SF10

    Abstract: SF10AG SF10BG SF10CG SF10DG SF10FG SF10GG SF10HG SF10JG
    Text: SF10AG - SF10JG 1.0A SUPER-FAST GLASS PASSIVATED RECTIFIER SPICE MODELS: SF10AG SF10BG SF10CG SF10DG SF10FG SF10GG SF10HG SF10JG Features • · · · · · · Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward


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    PDF SF10AG SF10JG SF10BG SF10CG SF10DG SF10FG SF10GG SF10HG SF10 SF10CG SF10JG

    Untitled

    Abstract: No abstract text available
    Text: SF10AG - SF10JG 1.0A SUPER-FAST GLASS PASSIVATED RECTIFIER SPICE MODELS: SF10AG SF10BG SF10CG SF10DG SF10FG SF10GG SF10HG SF10JG Features • · · · · · · Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward


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    PDF SF10AG SF10JG SF10BG SF10CG SF10DG SF10FG SF10GG SF10HG

    DO-41

    Abstract: DS24012 DO41
    Text: SPICE MODELS: SF10AG SF10BG SF10CG SF10DG SF10FG SF10GG SF10HG SF10JG SF10AG - SF10JG 1.0A SUPER-FAST GLASS PASSIVATED RECTIFIER Features • · · · · Glass Passivated Die Construction Super-Fast Switching for High Efficiency Surge Overload Rating to 30A Peak


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    PDF SF10AG SF10BG SF10CG SF10DG SF10FG SF10GG SF10HG SF10JG DO-41 DS24012 DO41

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


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    PDF represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355

    SF10

    Abstract: SF10AG SF10JG
    Text: SF10AG - SF10JG 1.0A SUPER-FAST GLASS PASSIVATED RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak


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    PDF SF10AG SF10JG DO-41 MIL-STD-202, DS24012 SF10 SF10JG

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


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    PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


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    PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


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    PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


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    PDF MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode

    smd marking 911 zener

    Abstract: d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt
    Text: RETURN TO SHORT FORM TABLE OF CONTENTS ################################### RETURN TO SHORT FORM INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Short Form Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 September 1999 Specifications are subject to change without notice.


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    PDF M5263B, ZMM5264B, ZMM5265B, ZMM5266B, ZMM5267B, ZMM56, ZMM62, ZMM68, ZMM75, smd marking 911 zener d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


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    PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


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    PDF MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


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    PDF MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


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    PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    SF10AG

    Abstract: SF10BG SF10CG SF10DG SF10FG SF10GG SF10HG SF10JG
    Text: SF10AGSF10JG Vishay Lite–On Power Semiconductor 1.0A Super–Fast Glass Passivated Rectifiers Features D D D D Glass passivated die construction Diffused junction Ultra–fast switching for high efficiency High current capability and low forward voltage


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    PDF SF10AG SF10JG SF10AG SF10BG SF10CG SF10DG SF10FG SF10GG SF10HG SF10BG SF10CG SF10DG SF10FG SF10GG SF10HG SF10JG

    SF10BG

    Abstract: SF10DG SF10FG SF10GG SF10HG SF10JG SF20HG
    Text: LITE-ON SEMICONDUCTOR SF10BG thru SF10JG REVERSE VOLTAGE - 100 to 600 Volts FORWARD CURRENT - 1.0 Ampere SUPER FAST GLASS PASSIVATED RECTIFIERS DO-41 FEATURES Glass passivated chip Super fast switching time for high efficiency Low forward voltage drop and high current capability


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    PDF SF10BG SF10JG DO-41 DO-41 SF10GG SF10HG 300us SF10DG SF10FG SF10GG SF10JG SF20HG

    MUR1560 equivalent

    Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
    Text: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON


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    PDF MR852 VHE1401 VHE1402 VHE1403 VHE1404 VHE205 VHE210 MUR1560 equivalent 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent

    Untitled

    Abstract: No abstract text available
    Text: LITE ON POWER SEMICONDUCTOR SF10BG thru SF10JG REVERSE VOLTAGE - 100 to 600 Volts FORWARD CURRENT - 1.0 Ampere SUPER FAST GLASS PASSIVATED RECTIFIERS DO-41 FEATURES Glass passivated chip Super fast switching time for high efficiency Low forward voltage drop and high current capability


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    PDF SF10BG SF10JG DO-41 DO-41 SF10GG SF10HG 300us

    Untitled

    Abstract: No abstract text available
    Text: n in n c c u I N C iv O R /J P O C R A T j E SF10AG - SF10JG 1.0A SUPER-FAST GLASS PASSIVATED RECTIFIER D Features X Glass Passivated Die Construction X Super-Fast Switching for High Efficiency X Surge Overload Rating to 30A Peak X Low Reverse Leakage Current


    OCR Scan
    PDF SF10AG SF10JG J-STD-020C MIL-STD-202, DO-41 DS24012

    SF10

    Abstract: SF10AG SF10HG SF10JG
    Text: SF10AG SF10JG 1.0A SUPER-FAST GLASS PASSIVATED RECTIFIER LITEM ZI y POWER SEMICONDUCTOR Features Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak


    OCR Scan
    PDF MIL-STD-202, DO-41 SF10HG DS24012 SF10AG SF10JG SF10 SF10JG

    SF10

    Abstract: sf10a SF10AG SF10GG SF10JG
    Text: r w \T ^ r r I N C O R P O R A T E SF10AG - SF10JG 1.0A SUPER-FAST GLASS PASSIVATED RECTIFIER D Features Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak


    OCR Scan
    PDF SF10AG SF10JG MIL-STD-202, DO-41 SF10GG SF10HG DS24012 SF10 sf10a SF10GG SF10JG