SF-104 EQUIVALENT TRANSISTOR Search Results

Halbleiterbauelemente DDR

Abstract: GAZ17 diode sy-250 "halbleiterwerk frankfurt" sal41 diode sy-170 SF 127 diode say17 Halbleiter-Bauelemente DDR SY 170
Contextual Info: eiecrronic Halbleiter-Bauelemente Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenndaten der in der DD R gefertigten H albleiterbauelem ente. Die Kennwerte werden im allgem einen für eine Um gebungs­ temperatur von 25 °C angegeben.

RCA-40673

Abstract: 40673 MOSFET rca 40673 40673 TRANSISTOR 40673 dual gate mosfet FET 40673 40673 200 pF air variable capacitor RCA40673 mosfet 40673
Contextual Info: MOS F IE L D -E F F E C T D E V IC E S 40673 APPLICATIONS SILICON DUAL INSULATED GATE FIELD-EFFECT TRANSISTOR N Chamel Depletion Type With Integrated Sate-Protection Circuits For RF Amplifier Applications ip to 400 MHz • R F am plifier, m ixer, and I F am plifier

24 LC 0261

Abstract: MRF927 42497 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF927T1 M RF927T3 NPN Silicon Low Voltage, Low Current, Low Noise, H igh-Frequency Transistors lc = 10mA LOW NOISE HIGH FREQUENCY TRANSISTOR Designed for use in low voltage, low current applications at frequencies to

FET K161

Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
Contextual Info: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

371 ph

Abstract: motorola 2198 MRF949 RF NPN POWER TRANSISTOR C 10-12 GHZ 1 307 329 082 552 transistor motorola microlab fc 730 transistor motorola 351 MRF949T1 FXR SF-31N
Contextual Info: MOTOROLA Order this document by MRF949T1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF949T1 NPN Silicon Low Noise Transistors Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF949 is well suited for low

1E14

Abstract: 2E12 FSGJ164D1 FSGJ164R3 FSGJ164R4 Rad Hard in Fairchild for MOSFET
Contextual Info: FSGJ164R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET itle GJ R bjec diat den GR ista Cha l wer SF tho yw s diat den GR ista Cha l wer SF rchi Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance

diode vg 902 c2

Abstract: 1E14 2E12 FSPL134D1 FSPL134R3 Rad Hard in Fairchild for MOSFET
Contextual Info: FSPL134R, FSPL134F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the

1E14

Abstract: 2E12 FSGYC164D1 FSGYC164R4 Rad Hard in Fairchild for MOSFET
Contextual Info: FSGYC164R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET itle GY 64R bjec diat den GR ista Cha l wer SF tho yw s diat den GR ista Cha l wer SF rchi Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance

1E14

Abstract: 2E12 FSPJ164D1 FSPJ164R3
Contextual Info: FSPJ164R, FSPJ164F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle PJ1 R, PJ1 bjec diat den GR ista Cha l wer SF ) tho yw s diat den GR ista Cha l wer SF , rchi Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance

1E14

Abstract: 2E12 FSPYC264D1 FSPYC264F FSPYC264R FSPYC264R3
Contextual Info: FSPYC264R, FSPYC264F Data Sheet June 2001 2001 Fairchild Semiconductor Corporation Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle PY 64R PY 64F bjec diat den GR ista Cha l wer SF tho yw s diat den GR ista Cha l wer SF , rchi Fairchild Star*Power Rad Hard

transistor motorola 351

Abstract: MRF949T1 MRF949 sc 2878
Contextual Info: Order this document by MRF949T1/D NPN Silicon Low Noise Transistors LOW NOISE TRANSISTORS Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF949 is well suited for low voltage wireless applications. This device features a 9.0 GHz

MRF949

Abstract: MRF949T1
Contextual Info: Order this document by MRF949T1/D MRF949T1 NPN Silicon Low Noise Transistors LOW NOISE TRANSISTORS Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF949 is well suited for low voltage wireless applications. This device features a 9.0 GHz

Contextual Info: Order this document by MRF949T1/D MRF949T1 NPN Silicon Low Noise Transistors LOW NOISE TRANSISTORS Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF949 is well suited for low voltage wireless applications. This device features a 9.0 GHz

microlab fc 730

Abstract: ic 1 ne 555 RF NPN POWER TRANSISTOR C 10-12 GHZ 02059 BF 245 A spice IC NE 555 datasheet part marking leb RF NPN POWER TRANSISTOR 2.5 GHZ MRF949 MRF949T1
Contextual Info: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Order this document by MRF949T1/D NPN Silicon Low Noise Transistors LOW NOISE TRANSISTORS Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF949 is well

Contextual Info: TM September 2013 • What are Semiconductor Devices? • How Semiconductors are Made − Front-End Process − Back-End Process • Fabrication Facility and Equipment Issues • Business Aspects of Supplying Semiconductors TM 2 TM 4 A conductor carries electricity like a pipe

1E14

Abstract: 2E12 FSPJ264D1 FSPJ264F FSPJ264R Rad Hard in Fairchild for MOSFET
Contextual Info: FSPJ264R, FSPJ264F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle PJ2 R, PJ2 bje dia de , GR ista Cha l wer SF ) tho yw s dia de , GR ista Cha l wer SF , rchi Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance

MRF927

Contextual Info: MOTOROLA Order this document by MRF927T1/D SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF927T1 NPN Silicon Low Voltage, MRF927T3 Low Current, Low Noise, High-Frequency Transistors IC = 10 mA LOW NOISE HIGH FREQUENCY TRANSISTOR Designed for use in low voltage, low current applications at frequencies to

MRF927

Abstract: MRF927T1 S212 HP11590B
Contextual Info: MOTOROLA Order this document by MRF927T1/D SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF927T1 NPN Silicon Low Voltage, Low Current, Low Noise, High-Frequency Transistors IC = 10 mA LOW NOISE HIGH FREQUENCY TRANSISTOR Designed for use in low voltage, low current applications at frequencies to

snl310 programming guide

Abstract: SNL310 0x000005 P4M transistor
Contextual Info: SNL310 PROGRAMMING GUIDE SNL310 Programming Guide General Release Specification SONIX reserves the right to make change without further notice to any products herein to improve reliability, function or design. SONIX does not assume any liability arising out of the application or use of any product or circuit described herein; neither does

2sc5088 horizontal transistors

Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
Contextual Info: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

MRF927T1 equivalent

Abstract: Motorola 581 741 datasheet motorola MRF927 MRF927T1 MRF927T3 S212 3019 npn transistor
Contextual Info: MOTOROLA Order this document by MRF927T1/D SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF927T1 NPN Silicon Low Voltage, MRF927T3 Low Current, Low Noise, High-Frequency Transistors IC = 10 mA LOW NOISE HIGH FREQUENCY TRANSISTOR Designed for use in low voltage, low current applications at frequencies to

transistor fb 31n

Abstract: MRF5815 case 317-01 mrf581 SF-11N 5812 MOTOROLA 118-136 mhz specifications of ic 1408 MRF5812 MRF5812R1
Contextual Info: MOTOROLA Order this document by MRF581/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MRF581 High-Frequency Transistors MRF5812R1, R2 Designed for high current low power amplifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz • Low Intermodulation Distortion

Contextual Info: EIE D • t iE 4^025 0 0 1 b 3 3 0 =5 ■ MITSUBISHI LSIs M 5M 482128J - 8. - 10. -12 ^ M I T S U B I S H I ME MOR Y/ AS IC 1 0 4 8 5 7 6 -B IT DUAL-PORT DYNAMIC RAM T-46-23-17 DESCRIPTION The Mitsubishi M5M482128J is a high speed 1048576-bit Dual Port Dynamic Memory equipped with a 128K x 8

a1273 transistor DATA

Abstract: a1273 transistor a1273 transistor scheme transistor A1267 a1273 80188 Programmers Reference Manual A1266 transistor a1271 transistor A1273 transistor A1270
Contextual Info: 80C186EB/80C188EB Microprocessor User’s Manual 80C186EB/80C188EB Microprocessor User’s Manual February 1995 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including infringement of any patent or copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions