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    SF TRANSISTOR Search Results

    SF TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SF TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sefuse d6x

    Abstract: SEFUSE d6y SEFUSE SEFUSE SF214E SEFUSE SF240E SEFUSE SF129E SFH162E SFH124E SF 127c SFH109E
    Text: Limitor GmbH NEC/Schott SEFUSE thermal cutoffs Components for temperature, current & time SF/E series SF/K series RoHS*conform since april 2003 SF/E series measures 4.2mm in body diameter and is VDE approved 10A + 15A at AC250V part no. Tf / TF Thermal cutoffs are


    Original     		PDF AC250V SF70E SF76E SF91E SF96E SF113E SF119E 50Ohm DC32V sefuse d6x SEFUSE d6y SEFUSE SEFUSE SF214E SEFUSE SF240E SEFUSE SF129E SFH162E SFH124E SF 127c SFH109E

    SEFUSE SF240E

    Abstract: SEFUSE SF214E sefuse d6x SEFUSE d6y SM125A0 SF240E SF113E SEFUSE SF129E SF214E nec d6x
    Text: Limitor GmbH NEC/Schott SEFUSE thermal cutoffs Components for temperature, current & time SF/E series SF/K series RoHS*compliant since april 2003 SF/E series measures 4.2mm in body diameter and is VDE approved 10A + 15A at AC250V part no. Tf / TF Thermal cutoffs are


    Original     		PDF AC250V SF70E SF76E SF91E SF96E SF113E SF119E 50Ohm DC32V SEFUSE SF240E SEFUSE SF214E sefuse d6x SEFUSE d6y SM125A0 SF240E SF113E SEFUSE SF129E SF214E nec d6x

    700-HN116

    Abstract: 700-HN114 700-HN103 199-DR1 HN-11 DPDT relay 6v ac ssr DPDT relay 48v iT 700 Varistor 240v
    Text: Bulletin 700-SF Solid-State Relays Overview/Product Selection Bulletin 700-SF Table Of Contents • • • • • • Product Selection . . . . . . . 47 Accessories . . . . . . . . . . . . 48 Specifications . . . . . . . . . . 49 Approximate Dimensions . . . . . . . . . . . . 50


    Original     		PDF 700-SF 700-HN116 700-SE 700-SH) 700-AT001A-EN-E, 700-HN114 700-HN103 199-DR1 HN-11 DPDT relay 6v ac ssr DPDT relay 48v iT 700 Varistor 240v

    1E14

    Abstract: 2E12 FSGYC164D1 FSGYC164R4 Rad Hard in Fairchild for MOSFET
    Text: FSGYC164R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET itle GY 64R bjec diat den GR ista Cha l wer SF tho yw s diat den GR ista Cha l wer SF rchi Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance


    Original     		PDF FSGYC164R FSGYC164R 1E14 2E12 FSGYC164D1 FSGYC164R4 Rad Hard in Fairchild for MOSFET

    1E14

    Abstract: 2E12 FSGJ164D1 FSGJ164R3 FSGJ164R4 Rad Hard in Fairchild for MOSFET
    Text: FSGJ164R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET itle GJ R bjec diat den GR ista Cha l wer SF tho yw s diat den GR ista Cha l wer SF rchi Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance


    Original     		PDF FSGJ164R FSGJ164R 1E14 2E12 FSGJ164D1 FSGJ164R3 FSGJ164R4 Rad Hard in Fairchild for MOSFET

    1E14

    Abstract: 2E12 FSPJ264D1 FSPJ264F FSPJ264R Rad Hard in Fairchild for MOSFET
    Text: FSPJ264R, FSPJ264F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle PJ2 R, PJ2 bje dia de , GR ista Cha l wer SF ) tho yw s dia de , GR ista Cha l wer SF , rchi Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance


    Original     		PDF FSPJ264R, FSPJ264F 1E14 2E12 FSPJ264D1 FSPJ264F FSPJ264R Rad Hard in Fairchild for MOSFET

    1E14

    Abstract: 2E12 FSPJ164D1 FSPJ164R3
    Text: FSPJ164R, FSPJ164F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle PJ1 R, PJ1 bjec diat den GR ista Cha l wer SF ) tho yw s diat den GR ista Cha l wer SF , rchi Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance


    Original     		PDF FSPJ164R, FSPJ164F 1E14 2E12 FSPJ164D1 FSPJ164R3

    1E14

    Abstract: 2E12 FSPYC264D1 FSPYC264F FSPYC264R FSPYC264R3
    Text: FSPYC264R, FSPYC264F Data Sheet June 2001 2001 Fairchild Semiconductor Corporation Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle PY 64R PY 64F bjec diat den GR ista Cha l wer SF tho yw s diat den GR ista Cha l wer SF , rchi Fairchild Star*Power Rad Hard


    Original     		PDF FSPYC264R, FSPYC264F FSPYC264F 1E14 2E12 FSPYC264D1 FSPYC264R FSPYC264R3

    TP218 transistor

    Abstract: XFMR1 671-8262 XFMR1 transformer 1458 opto k56 transistor smd MIDCOM 671-8262 TP1600 4DF3-836 TP218 IC
    Text: SocketModem SF Series Designer's Guide Preliminary Order No. 1158 October 28, 1997 SocketModem SF Series Designer’s Guide NOTICE Information furnished by Rockwell International Corporation is believed to be accurate and reliable. However, no responsibility is assumed by Rockwell International for its use, nor any infringement of patents or other rights of third parties


    Original     		PDF SOUD091297 TP218 transistor XFMR1 671-8262 XFMR1 transformer 1458 opto k56 transistor smd MIDCOM 671-8262 TP1600 4DF3-836 TP218 IC

    SF4-DC24V

    Abstract: scr arc welding control schematic SF2-DC24V ULTRASONIC GENERATOR OF PLASTIC welding machine circuit diagram LR26550 SF2-DC12V SF2-DC48V SF2-DC60V SF4-DC12V SF4-DC48V
    Text: SF POLARISED, MONOSTABLE SAFETY RELAY UL File No.: E43149 CSA File No.: LR26550 25.0 .984 53.3±0.5 2.098±.020 16.5±0.5 .650±.020 53.3±0.5 2.098±.020 SF-RELAYS • Forced operation contacts 2 Form A 2 Form B N.O. side and N.C. side contacts are connected through a card so that one


    Original     		PDF E43149 LR26550 SF4-DC24V scr arc welding control schematic SF2-DC24V ULTRASONIC GENERATOR OF PLASTIC welding machine circuit diagram LR26550 SF2-DC12V SF2-DC48V SF2-DC60V SF4-DC12V SF4-DC48V

    bsim3v3

    Abstract: C08p
    Text: 0.7µ µm 13.5V CMOS Process ID: SE/SF [C08p] Applications Main Process Flow • High voltage interface to mixed signal • P Substrate circuits, e.g: LCD display drivers, Power • Twin Wells


    Original     		PDF

    uhf linear amplifier module MAV-11

    Abstract: mini circuits 15542 zhl 1042j mini circuits 15542 zem-4300 VCO MCL POS-1060 ups circuit schematic diagram 1000w 15542 ZAPD-2 MINI-CIRCUIT 15542 model no zhl-1-2w mcl sbl-1 MIXER mini circuits 15542 ZFM sim 900A
    Text: IF RF MICROWAVE COMPONENTS GUIDE TM SF/2010 finds the model you need, Instantly. For pricing / availability, complete specifications, data sheets, RoHS compatibility, performance data /curves, pcb layouts, drawings shopping online, see minicircuits.com


    Original     		PDF SF/2010 uhf linear amplifier module MAV-11 mini circuits 15542 zhl 1042j mini circuits 15542 zem-4300 VCO MCL POS-1060 ups circuit schematic diagram 1000w 15542 ZAPD-2 MINI-CIRCUIT 15542 model no zhl-1-2w mcl sbl-1 MIXER mini circuits 15542 ZFM sim 900A

    Untitled

    Abstract: No abstract text available
    Text: 569 FIBER SENSORS Small Light Curtain Type 4 SF4-AH SERIES • General terms and conditions. P.1 ■ Glossary of terms. P.983~ Related Information ■ SF-AC . P.588 ■ General precautions . P.986~


    Original     		PDF CompacSF4-AH36 SF4-AH40 SF4-AH48 SF4-AH56 SF4-AH64 SF4-AH72 SF4-AH80 SF4-AH88 SF4-AH96

    Microcontroller Handbook

    Abstract: power amplifier 3000W with PCB
    Text: Beratung und Vertrieb: SF/2010 IF RF MICROWAVE COMPONENTS GUIDE TM finds the model you need, Instantly. For pricing / availability, complete specifications, data sheets, RoHS compatibility, performance data /curves, pcb layouts, drawings shopping online, see minicircuits.com


    Original     		PDF SF/2010 Microcontroller Handbook power amplifier 3000W with PCB

    DIODO S04

    Abstract: DIODO RU 30 A DIODO SIEMENS RU75 sfh600-2 siemens 22 DIODO AN 5218 diode S6 SMA diodo jb
    Text: SIEMENS SFH600 SERIES TRIOS * PHOTOTRAÑSISTOR OPTOCOUPLER FEA TU RES * High Current Tran sfer Ratios SF H 6 0 0 -0 ,40 to 80% SF H 6 0 0 -1 ,63 to 125% SF H 6 0 0 -2 ,100 to 200% S F H 600-3,160 to 320% * W ithstand T e st Voftage 1 Minute , 5300 V * v CEs«t 0.25 (S0.4) V, lF = 10 mA, lc = 2.5 mA


    OCR Scan     		PDF E52744 SFH600 SFH600 SFH600-2 SFH600-3 DIODO S04 DIODO RU 30 A DIODO SIEMENS RU75 sfh600-2 siemens 22 DIODO AN 5218 diode S6 SMA diodo jb

    RCA9229D

    Abstract: RCA9228D ACS 0865 rca 9228 d RCA9228A RCA9228B RCA9228C RCA9229A RCA9229B RCA9229C
    Text: 3875081 G E SOLID SfÄTE 01E 17323 D Darlington Power Transistors File Number 1448 RCA9228A, RCA9228B, RCA9228C, RCA9228D RCA9229A, RCA9229B, RCA9229C, RCA9229D 50-A C om plem entary High Current,


    OCR Scan     		PDF RCA9228A, RCA9228B, RCA9228C, RCA9228D RCA9229A, RCA9229B, RCA9229C, RCA9229D T0-204AE RCA-9228 RCA9229D RCA9228D ACS 0865 rca 9228 d RCA9228A RCA9228B RCA9228C RCA9229A RCA9229B RCA9229C

    2N5372

    Abstract: 2N5369 2N5373 2N5368 2N5370 2N5371 2N5374 2N5375 2N5568 NPN, PNP for 500ma, 30v
    Text: 2N 5368 through 2N 5375 ^1 COMPLEMENTARY SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES _ ;SF A THE ABOVE TYPES ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. CASE TO-92F CEB 2N 5368 ffPN


    OCR Scan     		PDF 2N5368 2N5375 O-92F 2N5568 2N5369 2N5370 500mA 2N5372 2N5373 2N5374 2N5371 NPN, PNP for 500ma, 30v

    21-030-J

    Abstract: No abstract text available
    Text: Sfï SGS-1H0MS0N MSC80196 \u RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 15:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.5 dB @ 2 GHz P out = 30.0 dBm MIN.


    OCR Scan     		PDF MSC80196 MSC80196 S96184 015-H---NO. 21-030-J 21-030-J

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUÜ403A GENERAL DESCRIPTION High-voltage, high-sf>eed planar-passivated npn power switching transistor in T0220AB envelope intended for use in electronic HF/OH lighting ballast applications, converters, inverters, switching regulators, motor control systems,


    OCR Scan     		PDF T0220AB BUJ403A

    GT50J102

    Abstract: No abstract text available
    Text: GT50J102 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 5 0 J 1 02 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • .sf. The 3rd. Generation. Enhancement-Mode. High Speed. : tf= 0.30,«s Max.


    OCR Scan     		PDF GT50J102 GT50J102

    Untitled

    Abstract: No abstract text available
    Text: 9- 3 / 7 ^3 F 6 - 25 R 06 KF EUPEC J> SEE GGGG272 Sf lf l «UPEC Thermische Eigenschaften Thermal pnoperties Rthjc DC, pro Baustein /p er module 0,21 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values


    OCR Scan     		PDF GGGG272

    Transistor MARKING CODE AW SOT89

    Abstract: Transistor marking 0.5 sot-89 MARKING CODE 4A transistors 2sd 2SD2153 T100 Transistor MARKING CODE AW SOT-89 oc sc62
    Text: 2SD2153 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD2153; DIM-*, where ★ is hFE code 2SD2153 (MPT3) 1.6 * 0 1 ?T. zH . it sf • excellent current-to-gain characteristics • low collector saturation voltage,


    OCR Scan     		PDF 2SD2153 OT-89, SC-62) 2SD2153; 00mfl70 G014fl71 Transistor MARKING CODE AW SOT89 Transistor marking 0.5 sot-89 MARKING CODE 4A transistors 2sd 2SD2153 T100 Transistor MARKING CODE AW SOT-89 oc sc62

    "Philips Semiconductors" BAX DO-35

    Abstract: B2V86-2V0 b2v86 BZV87-3V24 ba315 BA220
    Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal diodes LOW-VOLTAGE STABISTORS OVERVIEW VF typ. V 1 mA 5 mA at lF: Vr V RRM ' frm 10 mA max. max. max. sF typ. rdiH max. (V) (V) (mA) (mV/K)


    OCR Scan     		PDF DO-35 OD80C BAX14 BA220 BA315 BA314 BZV86-1V4 BZV86-2V0 BZV86-2V6 BZV86-3V2 "Philips Semiconductors" BAX DO-35 B2V86-2V0 b2v86 BZV87-3V24

    7A SF SC 30

    Abstract: No abstract text available
    Text: T O SH IB A 2SJ304 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M O SF i <; i 3 n d HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS U nit in mm 10 + 0.3


    OCR Scan     		PDF 2SJ304 --60V) 7A SF SC 30