SEMIKRON DIODE 400A Search Results

E63532

Abstract: SEMiX604GB176HDs semikron diode 400a
Contextual Info: SEMiX604GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1700 V Tc = 25°C 567 A Tc = 80°C 402 A 800 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25°C 740 A Tc = 80°C 496 A ICRM = 2xICnom VGES SEMiX 4s Trench IGBT Modules

SKM111R

Contextual Info: SEMIKRON 15E D I ai3t,b?l ODDlbll 7 I INC SEM1KRDN Absolute Maximum Ratings Symbol Conditions 1 V ds V dgr Id Idm V Rgs Values Units 100 100 200 600 ± 20 700 - 5 5 . . . + 150 2500 Class F 55/150/56 V V A A V W °C V 200 600 ' A A min. typ. max. Units 100

400V igbt dc to dc buck converter

Abstract: semikron gd-11 semikube semikron IGBT skm 200 gb 128d dc to ac PURE SINE WAVE inverter assembly code SKM300GB128D B6CI Semikube SKM400GB128D working principle of an inverter semikron gd-11 interface
Contextual Info: Application Note AN-8003 Key Words: cooling, capacitor, driver, IGBT, Input bridge rectifier, selection, SEMISTACK Revision: 00 Issue Date: 2008-05-27 Prepared by: Frederic Sargos SEMIKUBE selection guide 1. 1.1. 1.2. 2. 2.1. 2.2. 2.3. 2.4. 2.5. 2.6. 2.7.

Contextual Info: SEMiX402GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 600 V Tc = 25°C 509 A Tc = 80°C 383 A 800 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25°C 543 A Tc = 80°C 397 A ICRM = 2xICnom VGES SEMiX 2s Trench IGBT Modules

SEMiX754GB128Ds

Abstract: semikron IGBT 400A 600v
Contextual Info: SEMiX754GB128Ds Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 680 A Tc = 80°C 482 A 800 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 562 A Tc = 80°C 385 A ICRM = 2xICnom VGES SEMiX 4s SPT IGBT Modules

Contextual Info: SEMiX604GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 590 A Tc = 80°C 413 A 800 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 533 A Tc = 80°C 367 A ICRM = 2xICnom VGES SEMiX 4s Trench IGBT Modules

Contextual Info: SEMiX402GAL066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 600 V Tc = 25°C 509 A Tc = 80°C 383 A 800 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25°C 543 A Tc = 80°C 397 A ICRM = 2xICnom VGES SEMiX 2s Trench IGBT Modules

Contextual Info: SEMiX402GAR066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 600 V Tc = 25°C 509 A Tc = 80°C 383 A 800 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25°C 543 A Tc = 80°C 397 A ICRM = 2xICnom VGES SEMiX 2s Trench IGBT Modules

453gb12e4s

Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c
Contextual Info: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1

Contextual Info: SEMiX404GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 618 A Tc = 80°C 475 A 1200 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 440 A Tc = 80°C 329 A 1200 A -40 . 175 °C ICRM = 3xICnom

B-6114

Contextual Info: s e m ik r o n Absolute Maximum Ratings Symbol Conditions VCES VcGR lc Rge ~ 20 kn ICM V g es Ptot Tj, Tstgl V alu es Units ' 1200 Tease = 25/80 °C Tease = 25/80 ' C tp = 1 ms per IG B T, T caSe = 25 °C V 2700 - 4 0 . . .+ 1 5 0 (1 2 5 W °C 2 5 0 0 71

Contextual Info: 5EMIKRON Sym bol C o n d itio n s 1> Viso, 4 AC, 1min o—I Ü /— >I Q SKiiP 3-phase bridge Absolute Maximum Ratings Operating / stor. tem perature SKiiPPACK Values Units 2500 V -25.+85 °C 600 400 400 -40.+150 400 800 4000 80 V V A °C A A A kAs2

Contextual Info: 5 IE ì> m 013bb71 D Ü D 3 4 S 3 62G « S E K SEMIKRDN S E M I K R O N INC Vdrm V rrm tq Tvj = 125 °C V US G Itrms (maximum values for continuous operation) 350 A | 350 A (sin. 180; Tease = 76 °C; 50 Hz) 150 A 150 A Ita v 800 15 20 SKFT 150/08 DS —

Contextual Info: SKiiP 592GH170-2*271CTV I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms

semikron skiip 400 gb

Abstract: 402GD061-358CTV
Contextual Info: SKiiP 402GD061-358CTV I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms

Semikron Skai

Abstract: Semikron Skai 2 skai 2 semikron skai 1200 SEMISTACK IGBT Capacitor Bank skai 3001G 3001GD12 coolant
Contextual Info: SEMISTACK - SKAI Circuit Irms Vdc Types B6CI 300 900 SKAI 3001GD12 1452 W Symbol Conditions Irms1 no overload, Tcoolant= 50°C, 5kHz, p.f.=0,8 overload, t<20s VCES SKAI Solutions 1200V IGBT Advanced Drive System SKAI 3001GD12 1452 W SemiKron Advanced Integration SKAI) module

Semikron Skai 2

Abstract: semikron skai skai 2 4001GD06 SKAI 1452 semikron IGBT 400A 600v Capacitor Bank SEMISTACK IGBT IGBT 400 amp 400V capacitor bank
Contextual Info: SEMISTACK - SKAI Circuit Irms Vdc Types B6CI 400 450 SKAI 4001GD06 1452 W Symbol Conditions Irms1 no overload, Tcoolant= 50°C, 10kHz, p.f.=0,8 overload, t<20s VCES SKAI Solutions 600V IGBT Advanced Drive System SKAI 4001GD06 1452 W SemiKron Advanced Integration SKAI) module

datasheet gal 120 05 td

Abstract: semikron IGBT 400A 600v
Contextual Info: SKM 600 GAL 126 DT . Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICM VGES Tj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IF = –IC Tcase = 25 (80) °C

Contextual Info: SKiiP 3-phase bridge Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 2500 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms

RR3020

Abstract: ga128d
Contextual Info: SKM 500 GA 128 D Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C

LF400A

Contextual Info: Viso, 4 AC, 1min Operating / stor. tem perature o /> Ü —I C o n d itio n s 1> Q S ym bol —I SKiiP 592 GB 170 - 271 CTV Absolute Maximum Ratings SKiiPPACK V a lu e s U n its 4000 V -25.+85 °C 1700 1200 500 -40.+150 500 1000 4320 93 V V A °C A A

SKM 600 gb

Abstract: semikron IGBT 400A 600v
Contextual Info: SKM 600 GB 126 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C

Contextual Info: SKM 600 GB 126 D Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C

3 phase IGBT gate driver

Contextual Info: SKiiP 402 GH 061 - 258 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 2500 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms