SEMIX453GB12E4 Search Results

SEMIX453GB12E4 Price and Stock

Filter by Manufacturer


SEMIKRON SEMIX453GB12E4S Igbt, Module, 1.2Kv, 683A, Semix 3S; Continuous Collector Current:683A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:175°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes \|Semikron SEMIX453GB12E4S
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SEMIX453GB12E4S	Bulk	40		1	1 $377.94 10 $363.02 100 $363.02 1000 $363.02 10000 $363.02	Buy Now
Richardson RFPD	SEMIX453GB12E4S				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
SEMIKRON SEMIX453GB12E4I33P 27897020 Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SEMIX453GB12E4I33P 27897020				1	1 $722.93 10 $570.02 100 $513.85 1000 $513.85 10000 $513.85	Get Quote
SEMIKRON SEMIX453GB12E4IP 27897004 Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SEMIX453GB12E4IP 27897004				1	1 $697.97 10 $551.3 100 $496.17 1000 $496.17 10000 $496.17	Get Quote
SEMIKRON SEMIX453GB12E4P 27895004 Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SEMIX453GB12E4P 27895004				1	1 $676.12 10 $533.62 100 $480.57 1000 $480.57 10000 $480.57	Get Quote
SEMIKRON SEMIX453GB12E4S 27890140 Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SEMIX453GB12E4S 27890140				1	1 $665.72 10 $525.3 100 $473.29 1000 $473.29 10000 $473.29	Get Quote

Find more SEMIX453GB12E4 price and stock on Findchips.com

SEMIX453GB12E4 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SEMiX453GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX453GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V	Original	PDF	SEMiX453GB12E4s E63532
SEMiX453GB12E4 Abstract: No abstract text available Text: SEMiX453GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX453GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V	Original	PDF	SEMiX453GB12E4s SEMiX453GB12E4s E63532 SEMiX453GB12E4
SEMIX453GB12E4s Abstract: No abstract text available Text: SEMiX453GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	PDF	SEMiX453GB12E4s E63532 SEMIX453GB12E4s
Untitled Abstract: No abstract text available Text: SEMiX453GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	PDF	SEMiX453GB12E4s E63532 ApplMiX453GB12E4s
SEMiX453GB12E4 Abstract: No abstract text available Text: SEMiX453GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C	Original	PDF	SEMiX453GB12E4s E63532 SEMiX453GB12E4
SEMIX453GB12E4s Abstract: No abstract text available Text: SEMiX453GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	PDF	SEMiX453GB12E4s E63532 SEMIX453GB12E4s
SEMiX453GB12E4 Abstract: SEMIX453GB12E4S Text: SEMiX453GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	PDF	SEMiX453GB12E4s E63532 SEMiX453GB12E4 SEMIX453GB12E4S
453gb12e4s Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c Text: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1	Original	PDF	AN-9001 453gb12e4s SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c
SEMIX353GB126V1 Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots	Original	PDF	SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1