SEMIKRON DIODE 200A Search Results

Contextual Info: SEMIKRON Conditions1> Visol 4 AC, Operating / stor. tem perature —I /> Q Symbol —I o Ü SKiiP 292 GD 170 - 375 CTV Absolute Maximum Ratings 1 SKiiPPACK Values min Units 4000 V °C -2 5 .+ 8 5 IGBT and Inverse Diode V ces \/ Operating DC link voltage

B697

Abstract: 10R-A10
Contextual Info: SEMIKRON Absolute Maximum Ratings Symbol VcES VcGR lc ICM VqeS Plot Tj. Ts* Visol humidity climate Rge = 20 k£i Tease = 25/80 “C Tease ~ 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC68T.1 Inverse Diode Tease = 25/80 C If= - lc

SKM 300 GA 102 D

Abstract: si 13003 br hc 13003 ml 13003 skm300ga122d semikron diode 200a DDD3717 DDG371B GA102 SKM 300 CIRCUIT
Contextual Info: 013bb71 □□□3710 Iflfl * S E K G S1E D S EM IK R D N SEPIIKRON INC Absolute Maximum Ratings Symbol Values 102 D Conditions1> 1000 1200 1000 1200 300/200 600/400 ±20 1750 -5 5 . . .+150 2 500 Class F 55/150/56 VcES Rge = 20 k iî VCGR Ic Tease = 2 5 / 8 5 ° C

m2160

Abstract: Semipack 1 skfh Semipack skfh 40
Contextual Info: 1SE D I SEMIKRON INC S13bt71 0001477 5 | -r-« - 2* Ifrms maximum values for continuous ofjeration 130 A | 130 A | 300 A 300 A V hsm V rrm V 60A(94°C) Ifav (sin. 180; Tease = .°C;50Hz 160 A (86 °C) 60A(94°C) 400 SKFH 110/04. SKFH110/08. SK K D 160 M 08

UPS es 550

Abstract: SKM300GB123D
Contextual Info: SKM 300GB123D T = 25 °C, unless otherwise specified Absolute Maximum Ratings Symbol IGBT Conditions Values 1200 V Tcase = 2 5 ” C 300 A Tease = 80 °C 220 A 400 A ±20 V 10 MS °C 260 A = 80 °C 180 A 400 A = 150 °C 2200 A Tcase = 25 °C 350 A 230 A 600

Contextual Info: SKM 300GB125D T = 25 °C, unless otherwise specified Absolute Maximum Ratings Symbol IGBT | Conditions V CES Tj = 25 °C •c Tj = 150 °C Values 1200 V Tcase = 2 5 ° C 300 A = 80 °C 210 A 400 A ±20 V 10 MS Tcase = 2 5 ° C 260 A = 80 °C 180 A 400 A 1800

Contextual Info: SKM 300GB125D T = 25 °C, unless otherwise specified Absolute Maximum Ratings Symbol IGBT | Conditions V CES Tj = 25 °C •c Tj = 150 °C 1200 V 300 A = 80 °C 210 A 400 A ±20 V 10 MS T case = 2 5 ° C 260 A = 80 °C 180 A 400 A 1800 A 500 A -4 0 .+ 150

Contextual Info: SIE D • SEMIKRON a i 3 bb?l 0 0 D 3 SÖE SDS « S E K G s e m ik r d n INC Absolute Maximum Ratings Symbol Conditions 1 V ds V dgr Rgs kii = 20 Id Id m V gs Pd Tj, Tstg Visol humidity climate AC, 1 min, 200 iA DIN 40 040 DIN IEC 68 T.1 Values Units 400

Contextual Info: SEMiX352GAR128Ds Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 377 A Tc = 80°C 268 A 400 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 297 A Tc = 80°C 204 A ICRM = 2xICnom VGES SEMiX 2s SPT IGBT Modules

Contextual Info: SEMiX302GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1700 V Tc = 25°C 308 A Tc = 80°C 219 A 400 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25°C 389 A Tc = 80°C 262 A ICRM = 2xICnom VGES SEMiX 2s Trench IGBT Modules

calculation of IGBT snubber

Abstract: semikron snubber SEMIKRON Application Note AN-7006 IGBT ac switch circuit IGBT snubber snubber capacitor for low frequency semikron IGBT snubber DC Link capacitor calculation inverter AN-7006 semikron skiip v1
Contextual Info: Application Note AN-7006 Revision: 00 Issue Date: 2008-03-17 Prepared by: Joachim Lamp Key Words: IGBT module, snubber capacitor, peak voltage IGBT Peak Voltage Measurement and Snubber Capacitor Specification General . 1

400V igbt dc to dc buck converter

Abstract: semikron gd-11 semikube semikron IGBT skm 200 gb 128d dc to ac PURE SINE WAVE inverter assembly code SKM300GB128D B6CI Semikube SKM400GB128D working principle of an inverter semikron gd-11 interface
Contextual Info: Application Note AN-8003 Key Words: cooling, capacitor, driver, IGBT, Input bridge rectifier, selection, SEMISTACK Revision: 00 Issue Date: 2008-05-27 Prepared by: Frederic Sargos SEMIKUBE selection guide 1. 1.1. 1.2. 2. 2.1. 2.2. 2.3. 2.4. 2.5. 2.6. 2.7.

Contextual Info: SEMiX202GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 600 V Tc = 25°C 274 A Tc = 80°C 207 A 400 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25°C 291 A Tc = 80°C 214 A ICRM = 2xICnom VGES SEMiX 2s Trench IGBT Modules

Contextual Info: SEMiX202GB066HD Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tvj = 175°C 600 V Tc = 25°C 274 A Tc = 80°C 207 A 400 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25°C 404 A Tc = 80°C 322 A ICRM = 2xICnom VGES SEMiX 2 tpsc Trench IGBT Modules

Contextual Info: SEMiX201GD066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 600 V Tc = 25°C 259 A Tc = 80°C 196 A 400 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25°C 284 A Tc = 80°C 208 A ICRM = 2xICnom VGES SEMiX 13 Trench IGBT Modules

SEMIX352GB128D

Contextual Info: SEMiX352GB128Ds Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 377 A Tc = 80°C 268 A 400 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 297 A Tc = 80°C 204 A ICRM = 2xICnom VGES SEMiX 2s SPT IGBT Modules

Contextual Info: SEMiX352GAL128Ds Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 377 A Tc = 80°C 268 A 400 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 297 A Tc = 80°C 204 A ICRM = 2xICnom VGES SEMiX 2s SPT IGBT Modules

thyristor BT 200

Contextual Info: âl3bti71 0D04DE1 SÔM M S E K Û S1E D SEMIKRON SEMIKRON INC D Tease = .°C, full conduction V drm VrsM V rrm 40A (92°C) 40A(92°C) 60A(86°C) 100A(84°C) 400 V 800 V 1200 V 1400V SKCH 40/04 SKCH 40/08 SKCH 40/12 SKCH 40/14 SKBT 40/04 SKBT 40/08 SKBT 40/12

Contextual Info: SEMiX202GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 314 A Tc = 80°C 242 A 600 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 229 A Tc = 80°C 172 A 600 A -40 . 175 °C ICRM = 3xICnom VGES

453gb12e4s

Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c
Contextual Info: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1

SKM101AR

Contextual Info: SIE D • DGD3S7D Ö^O « S E K G fllBbb?! s e m ik r o n SEMIKRON INC Absolute Maximum Ratings Symbol V ds V dgr Id Idm V gs Pd Tj, Tstg Visol humidity climate Conditions ' Rgs = 20 k f l Tease = 100 °C AC, 1 min, 200 |iA DIN 40 040 DIN IEC 68 T.1 Values

af200

Contextual Info: s e M IKRD n Absolute Maximum Ratings Sym bol V a lu e s C onditions ' U nits Plot Tj, Tstg per IGBT, Tease ” 25 °C Vfcol humidity climate AC, 1 min. DIN 40 040 DIN IE C 68 T .1 1700 1700 300 / 200 600 / 400 ±20 1750 - 4 0 . . .+150 (125) 4000 Class F

Contextual Info: 5 EMIKRON V iso , 4 AC, 1min Operating /> —I C o n d itio n s 1> Q Sym bol —I o Ü SKiiP 3-phase bridge Absolute Maximum Ratings / SKiiPPACK Values stor. tem perature Units 2500 V -25.+85 °C 600 400 200 -40.+150 200 400 2000 20 V V A °C A A A kAs2

semikron skiip 400 gb

Abstract: 202GD061-357CTV 202GD061-357
Contextual Info: SKiiP 202GD061-357CTV I. Power section Absolute maximum ratings Symbol Ts = 25°C unless otherwise specified Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin