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    SEMIX202GB066HDS Price and Stock

    SEMIKRON SEMIX202GB066HDS

    Igbt Module, Dual, 600V, 275A; Continuous Collector Current:275A; Collector Emitter Saturation Voltage:1.45V; Power Dissipation:45W; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:600V Rohs Compliant: Yes |Semikron SEMIX202GB066HDS
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    Newark SEMIX202GB066HDS Bulk 6
    • 1 -
    • 10 $97.42
    • 100 $89.07
    • 1000 $89.07
    • 10000 $89.07
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    RS SEMIX202GB066HDS Bulk 1
    • 1 $371.06
    • 10 $341.38
    • 100 $341.38
    • 1000 $341.38
    • 10000 $341.38
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    SEMIKRON SEMIX202GB066HDS 27891110

    Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SEMIX202GB066HDS 27891110 1
    • 1 $297.01
    • 10 $234.87
    • 100 $210.65
    • 1000 $210.65
    • 10000 $210.65
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    SEMIX202GB066HDS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SEMIX202GB066HDS Semikron Trench IGBT Modules Original PDF

    SEMIX202GB066HDS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SEMiX202GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 274 A Tc = 80 °C 207 A 200 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 400 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C


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    PDF SEMiX202GB066HDs

    Untitled

    Abstract: No abstract text available
    Text: SEMiX202GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 274 A Tc = 80 °C 207 A 200 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX202GB066HDs VGES tpsc Tj ICRM = 2xICnom VCC = 360 V


    Original
    PDF SEMiX202GB066HDs SEMiX202GB066HDs E63532

    Untitled

    Abstract: No abstract text available
    Text: SEMiX202GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 274 A Tc = 80 °C 207 A 200 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 400 A -20 . 20 V 6 µs -40 . 175 °C


    Original
    PDF SEMiX202GB066HDs E63532

    Untitled

    Abstract: No abstract text available
    Text: SEMiX202GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 600 V Tc = 25°C 274 A Tc = 80°C 207 A 400 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25°C 291 A Tc = 80°C 214 A ICRM = 2xICnom VGES SEMiX 2s Trench IGBT Modules


    Original
    PDF SEMiX202GB066HDs

    semikron ms 8/4

    Abstract: No abstract text available
    Text: SEMiX202GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 274 A Tc = 80 °C 207 A 200 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 2xICnom 400 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C


    Original
    PDF SEMiX202GB066HDs E63532 semikron ms 8/4

    Positive Temperature Coefficient

    Abstract: No abstract text available
    Text: SEMiX202GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 274 A Tc = 80 °C 207 A 200 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 2xICnom 400 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C


    Original
    PDF SEMiX202GB066HDs E63532 B100/125 R100exp B100/125 1/T-1/T100) Positive Temperature Coefficient

    SEMIX353GB126V1

    Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
    Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots


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    PDF SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1