SDT85305 Search Results

Contextual Info: SDT85305 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)170 I(C) Max. (A)10 Absolute Max. Power Diss. (W)117 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

300pF

Abstract: NPN triple diffused 60V 2N4070 2N4071 JAN2N4150 JAN2N5237 JAN2N5238 SDT7601 SDT7618 SDT7A05
Contextual Info: ^olîtran Devices. Inc Ä ¥ M ,© MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* (FORMERLY 85 CHIP NUMBER dfl CONTACT METALLIZATION Base and emitter: > 30,000 Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)

2NS604

Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
Contextual Info: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75

2N5286

Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562
Contextual Info: SOLITRON DEVICES INC ^ D eT| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT

Contextual Info: ra !» ? mm©©_ -Jfotttron MEDIUM TO HIGH VOLTAGE, FAST SWITCHING Devices. Inc NPN EPITAXIAL/TRIPLE DIFFUSED _PLANAR POWER TRANSISTOR * * FORMERLY 85 CHIP NUMBER CONTACT METALLIZATION B ase a n d em itter: > 30,000 A Aluminum

Contextual Info: SOLITRON DEVICES IP M M ? ^ 561 863 5946 11/21/02 18:18 0 :06/08 N0:092 © Ä T T Ä I L ® _ _ J S u t ìs n Devices. Inc MEDIUM TO HIGH VOLTAGE, FAST 8WITCHING NPIM EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* * FORMERLY 85

40G120

Abstract: BU124 2SD745 BD141
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 >= 40 45 50 SML7611 SDT7806 SDT7806 2N1811 2N2111 SDT7206 SDT7206 SDT7910 SDT791 0 SDT791 0 BU124 BU124 BU124 BU124A BU124A DTL8753 2N6262 BUX17 BUX17 WXlT 55 60 65 70 75 80 85 90 SDT7736 SDT7736

2SA1106 SANKEN

Abstract: TO247s BD141 PNP 2sc1116A sanken 2SA1186 SANKEN BU124 texas SDT7605 2sA747A sanken BU124 2SB705
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE fT ON) Min (Hz) ICBO *ON r Max Max (A) (s) Max (Ohms) (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . -10 -15 20 . .

SDT13305

Abstract: SDT12302 SDT13303 SDT7603 SDT7732 2N2811 2N2812 2N2813 2N2814 2N4070
Contextual Info: Device Type VCEO hFE V Min/Max @ IC (A) 2N2811 2N2812 2N2813 2N2814 2N4070 2N4071 2N4301 2N5006 2N5008 2N5218 2N5288 2N5289 2N5313 2N5315 2N5317 2N5319 2N5327 2N5540 2N5542 2N5622 2N5624 2N5626 2N5628 2N5730 2N5854 2N6128 2N6216 2N6217 2N6249 2N6250 2N6251

Contextual Info: 8368602 SOLITRON DEVICES INC ~TS 95D 02 86 3 D 3 3 - t / - DE|fl3bôb02 OOOEflk.3 E | Devices. Inc. M EDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* (FORMERLY 85 CHIP NUMBER CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum