SCHEMATIC OF TTL AND GATES Search Results

dc cdi schematic diagram

Abstract: Ac cdi schematic diagram California Devices DM30ND cdi schematic level shifter . CMOS to TTL cdi schematic diagram cdi schematics TIL 81 transistor BC 945
Contextual Info: •CALIFORNIA DEVICES INC b4 J CD D e | 1AEST3E 000D334 1 | 3 T-42-11^09 DLM SERIES HCMOS Gate Arrays CALIFORNIA DEVICES INC. April 1985 PRODUCT FEATURES DLM SERIES FAMILY ORGANIZATION • High performance 3 /jm silicon gate HCMOS technology, ■ From 210 to 10,152 equivalent 2-input gates.

LBD8

Abstract: lt08 LT016
Contextual Info: ADV KICRO PLA /P LE /A R R A YS 13E D 1 05S7Sat. Q O a flà lt *1 I Am3530 Mixed ECL/TTL I/O Mask-Programmable Gate Array > 3 DISTINCTIVE CHARACTERISTICS GO 01 Integrated up to 410 ECL-equivalent gates in a 24-pin slim DIP , to eliminate "g lu e " logic, resulting in reduced

Contextual Info: GATE ARRAYS Features • 0.8nm effective gate lengths 1 .Op.m drawn combined with close metal spacing provides outstanding speed/power performance • Modified channeless architecture provides higher utilization ranging from 2,600 to 130,000 usable gates

LT016

Abstract: LT08 YD-350 ecu schematics AIX200 LT08C LBd8 AIX2024 COF2001
Contextual Info: ADV faCRO PLA/PLE/ARRAYS 13E D Am353 b oas?sat, aoaasib 1 1 Mixed ECL/TTL I/O Mask-Programmable Gate Array > 3 DISTINCTIVE CHARACTERISTICS Integrated up to 410 ECL-equivalent gates in a 24-pin slim DIP , to eliminate "g lu e " logic, resulting in reduced

shiftregisters

Abstract: EP910 altera TTL library 74LS series logic gates 74LS EP1810 EP1810-45 EP610 PLE40 altera logicaps TTL library
Contextual Info: EP1810 Y 7 \ m HIGH PERFORMANCE 4 8 MACROCELL EPLD m 10 I U FEATURES GENERAL DESCRIPTION • Erasable, User-Configurable LSI circuit capable of implementing 2100 equivalent gates of conven­ tional and custom logic. • Speed equivalent to 74LS TTL with 33 MHz clock

Altera EP1800

Abstract: EP1800 JEDEC FORMAT EP1800 altera logicaps TTL library SCHEMA PA BUILT UP EP1800 LOGIC DIAGRAM ep18001
Contextual Info: EP1800 Erasable, User-Configurable LSI circuit capable of implementing 2100 equivalent gates of conventional and custom logic. Speed equivalent to 74LS TTL with 25 MHz clock rates. “Zero Power” typically 10/jA standby . Active power of 250 mW at 5 MHz.

ns 4248

Abstract: Toggle flip flop THREE INPUT TTL OR GATE DUAL FLIP FLOP TRISTATE
Contextual Info: OKI PRELIMINARY SEMICONDUCTOR MSM10V0000 1.5n FLEXIBLE CELL ARRAY FAMILY GENERAL DESCRIPTION FEATURES OKI's Flexible Cell Array FCA "sea-of-gates" series is a high density gate array family which is fabricated using a high performance 1.5^ dual-layer

OA41

Abstract: LO34 on222 transistor VGFX20K lo4b OA43 OAI221 VGFX100K VGFX40K 4 BIT ADDER
Contextual Info: VITESSE FX Family Data Sheet High Performance FX Family Gate Arrays Features • 20,000-350,000 Raw Gates, Channelless Array Architecture • Sea-of-Gates Architecture and Four Layer Metal for High Density • Array Performance - Typical gate delay: 97 ps @ 0.19 mW

S-MOS navnet

Abstract: S-MOS asic B16c F1841
Contextual Info: DEC 2 3 i32S _ S-MOS S Y S T E M S • ■ ASIC _ A Seiko Epson Affiliate SLA9000 OCTOBER 1990 HIGH SPEED CMOS GATE ARRAYS DESCRIPTION The S-MOS SLA9000 series is a family of sea-of-gates • 1.0 micron drawn channel length N-Channel

the peacocks

Abstract: aa6rv TTL to LVTTL level shifter S1L50282 S1L50000 htri S1L5177 s1l51252
Contextual Info: DATA SHEET ASIC S1L50000 S1L50000 SERIES HIGH DENSITY GATE ARRAY Œ DESCRIPTION EPSON Electronics America, Inc.’s S1L50000 Series is a family of ultra high-speed VLSI CMOS gate array utilizing a 0.35µm “sea-of-gates” architecture. The S1L50000H products feature 5V

SLA5125

Abstract: SLA5028 250160 the peacocks Epson Electronics America SLA5668 SLA5506 SLA50000H SLA50000 SLA5075
Contextual Info: DATA SHEET ASIC SLA50000H SLA50000H SERIES HIGH DENSITY GATE ARRAY Œ DESCRIPTION EPSON Electronics America, Inc.’s SLA50000H Series is a family of ultra high-speed VLSI CMOS gate array utilizing a 0.35µm “sea-of-gates” architecture. The SLA50000H products feature 5V

Silicon npn TRANSISTOR TCNL 100

Abstract: tcnl 100 TRANSISTOR TCNL 100 ECL IC NAND MUX4E schematic of TTL XOR Gates TSN2 tcnl transistor ic xnor XOR23
Contextual Info: T & T MELEC I C b4E D • DOSGQEb OOlGSlfc, Preliminary Data Sheet May 1992 a TG2 ■ ATT? &t M icroelectronics a t BEST-1 Series High-Performance ECL Gate Arrays Features Description ■ 1,000 and 4,000 equivalent logic gates The BEST-1 Series High-Performance ECL Gate

MM80C96

Abstract: MM70C96 MM80C95
Contextual Info: MM70C95/MM80C95, MM70C97/MM80C97 TRI-STATE Hex Buffers MM70C96/MM80C96, MM70C98/MM80C98 TRI-STATE Hex Inverters General Description Features These gates are monolithic complementary MOS CMOS integrated circuits constructed with N- and P-channel en­ hancement mode transistors. The MM70C95/MM80C95

transistor nd8

Abstract: BT4R ISB28000 bt8c pMOS NAND GATE MUX21L AN720 BUT12 BUT18 BUT24
Contextual Info: ISB28000 SERIES HCMOS EMBEDDED ARRAY PRELIMINARY DATA FEATURES Combines Standard Cell features with Sea Of Gates time to market. 0.7 micron triple layer metal HCMOS process featuring self-aligned twin tub N and P wells, low resistance polysilicide gates and thin metal oxide.

226R-1-5A1

Contextual Info: NAGNECR AFT CLASS 226 UP TO 7 AMPS SPST— NO DC INPUTS .670 Maxj AC OUTPUTS <170> jt JD62 Dia. {1.6 Typ.all pins LOW COST. COMPATIBLE WITH TTL GATES. PRINTED CIRCUIT AND PUSH-ON CONNECTOR VERSIONS. MOUNTS ON TO-3 TRANSISTOR HEATSINKS FOR ADDED CURRENT RATING.

siemens master drive circuit diagram

Abstract: SR flip flop IC toshiba tc110g TC110G jk flip flop to d flip flop conversion SC11C1 JK flip flop IC siemens Nand gate scxc1 SR flip flop IC pin diagram
Contextual Info: SIEM EN S ASIC Product Description SCxC1 Family CMOS Gate Arrays FEATURES • Alternate source of Toshiba TC110G family ■ Densities up to 129,000 raw gates ■ Channelless “ sea of gates” architecture ■ 1.5 firn drawn CMOS technology, scalable to 1.0 /¿m

Q24060

Abstract: transistor D1303 m1-6116 Q24008
Contextual Info: ADVANCE DEVICE SPECIFICATION Q24000 SERIES BiCMOS LOGIC ARRAYS DESCRIPTION The AMCC Q24000 Series of BiCM OS logic arrays is comprised of six products with densities of 760, 2160, 5760, 9072, 13,440 and 27,520 equivalent gates. The series is optimized to provide CM OS densities with

m60013

Abstract: M60016 m60011 M60014 z46n M60030 M60024 Z24N M60012 m60043
Contextual Info: A m its u b is h i CMOS GATE ARRAYS ELECTRONIC DEVICE GROUP Mitsubishi CMOS Gate Arrays INTRODUCTION Mitsubishi offers three fami­ lies of CMOS gate arrays: 1.0 /im, 1.3 /j.m, and 2.0 ji.m, with usable gates ranging from 200 to 35,000. The 1.0 and 1.3 p.m devices are

Contextual Info: > dM C C M IC R O P O W E R S T A N D A R D C E L L 3 .3 V / 5V FEATURES • Operating Frequencies Up to 2.5GHz • Up to 4,000 Internal Gates and 200 l/Os • Cell Based Architecture • 1 Micron Bipolar Process, 3 Layer Interconnect • 10Ops Equivalent Gate Delays

XN2222

Abstract: OA2222L teradyne lasar GLX120K GLX80K 800MHZ GLX15K GLX220K GLX40K ecl nand Logic Family Specifications
Contextual Info: VITESSE Preliminary Data Sheet GLX Family High Performance Low Power GaAs Gate Arrays Features • Sea-of-Gates Core • Low-Power Macros Available • Five Array Sizes: 15K, 40K, 80K, 120K and 220K Raw Gates • Standard TTL, LVTTL, ECL, LVPECL, GTL, HSTL and LVDS I/O Compatibility

MM80C96

Abstract: MM70C96 MM80C97 C1995 MM70C95 MM70C97 MM70C98 MM80C95 MM80C98 MM80C98N
Contextual Info: MM70C95 MM80C95 MM70C97 MM80C97 TRI-STATE Hex Buffers MM70C96 MM80C96 MM70C98 MM80C98 TRI-STATE Hex Inverters General Description Features These gates are monolithic complementary MOS CMOS integrated circuits constructed with N- and P-channel enhancement mode transistors The MM70C95 MM80C95

cq24-000

Abstract: Q24060 98l18
Contextual Info: Sfe- -<•' m2 DEVICE SPECIFICATION SERIES BiCMOS LOGIC ARRAYS Q24000 DESCRIPTION The AMCC Q24000 Series of BiCMOS logic arrays is comprised of six products with densities ranging from 720 to 13440 equivalent gates including a structured array with a high performance Phase-Locked Loop*.

CB12000

Abstract: cd 4847 bt8c dc to ac inverter schematic CB22000 ld3p FD11S FD3S BUT12 BUT18
Contextual Info: CB22000 SERIES HCMOS STANDARD CELL GENERAL DESCRIPTION FEATURES 0.7 micron, double layer metal HCMOS4T process featuring self-aligned twin tub N and P wells, low resistance polysilicide gates and thin metal oxide. 2 - input NAND ND2P delay of 0.30 ns (typ)

SE529

Abstract: NE529
Contextual Info: NE/SE529-F,K,N DESCRIPTION FEATURES The SE/NE529 is a high speed analog volt­ age com parator which, for the first time mates state-of-the-art Schottky diode tech­ nology with the conventional linear proc­ ess. This allows simultaneous fabrication of high speed T2L gates with a precision linear