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    transistor nd8

    Abstract: BT4R ISB28000 bt8c pMOS NAND GATE MUX21L AN720 BUT12 BUT18 BUT24
    Text: ISB28000 SERIES HCMOS EMBEDDED ARRAY PRELIMINARY DATA FEATURES Combines Standard Cell features with Sea Of Gates time to market. 0.7 micron triple layer metal HCMOS process featuring self-aligned twin tub N and P wells, low resistance polysilicide gates and thin metal oxide.


    Original     		ISB28000 transistor nd8 BT4R bt8c pMOS NAND GATE MUX21L AN720 BUT12 BUT18 BUT24 PDF

    ISB12000

    Abstract: signal path designer
    Text: ISB35000 SERIES HCMOS STRUCTURED ARRAY PRELIMINARY DATA FEATURES F u lly in de p e n d en t p o we r an d g rou n d configurations for inputs, core and outputs. 0.5 micron triple layer metal HCMOS process featuring retrograde well technology, low resistance salicided active areas, polysilicide


    Original     		ISB35000 ISB12000 signal path designer PDF

    SGS-Thomson ball grid array

    Abstract: schematics power supply satellite receiver ISB35000 ISB35083 ISB35130 ISB35166 ISB35208 ISB35279 ISB35389 ISB35484
    Text: ISB35000 SERIES HCMOS STRUCTURED ARRAY PRELIMINARY DATA FEATURES F u l ly i n de p en d en t p o we r an d g roun d configurations for inputs, core and outputs. 0.5 micron triple layer metal HCMOS process featuring retrograde well technology, low resistance salicided active areas, polysilicide


    Original     		ISB35000 SGS-Thomson ball grid array schematics power supply satellite receiver ISB35083 ISB35130 ISB35166 ISB35208 ISB35279 ISB35389 ISB35484 PDF